2N5210 C Search Results

2N5210

Contextual Info: 2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol

Contextual Info: 2N5209 • 2N5210 NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS 1 CASE TO-92A THE 2N5209, 2N5210 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP LOW NOISE PREAMPLIFIERS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N5086, 2N5087- '0 EBC ABSOLUTE MAXIMUM RATINGS

transistor 2N5210

Abstract: 2N5209 2N5210
Contextual Info: DATA SHEET 2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS TA=25°C

2N5210

Abstract: transistor 2N5210 2N5209
Contextual Info: MOTOROLA Order this document by 2N5209/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5209 2N5210 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage

2n5210 equivalent

Abstract: 2n5210 2N5210 datasheet 2n5088 transistor 2N5088 2N5210 c
Contextual Info: 2N5210 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings*

Contextual Info: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

2N5769

Abstract: 2N5219 2N5225 2N5172 2N5209 2N5210 2N5220 2N5224 2N5232 2N5232A
Contextual Info: TO-92 Plastic Package Transistors NPN Maxinnum R atings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) *c Po (W) (A) @Tc=25” ^C BO ^CEO ^EBO (V) Min (V) Min (V) Min 2N5172 25 25 5 0.4 2N5209 50 50 5 0.625 0.0. 2N5210 50 50 5

LS 5087

Abstract: a5t5086
Contextual Info: TYPES 2N5086. 2N5087, A5T5086, A5T5087 P-N P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 2 Î. M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-LEVEL, LOW-NOISE AUDIO AMPLIFIER APPLICATIONS • For Complementary Use with N-P-N Types 2N5209, 2N5210, A5T5209, A5T5210

2SA564A-P

Abstract: 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2N5138 2SA1715 2SC372
Contextual Info: TYPE NO. H M A X IM U M R A TIN G S CASE Pd mW 'c Im A) V CEO (V) min FE V CE(SAT) max •c lm A | V CE (V) max (V) 'c Im A I fT min (MHz) Cob N.F. max max (pF) (dB) _ 2N5138 2N 5172 2N5209 2N5210 2N5219 P IM N N N TO -IO 6 TO-92B T O -92A TO-92A TO -92A

Contextual Info: D is c re te P O W E R & S ig n a l Technologies e iM iP O N O iJ C T a « - 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1|aA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

2N5210A

Abstract: a5t5209 52-10A ic 5209 2N5209
Contextual Info: TYPES 2N5209, 2N5210, A5T5209, A5T5210 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 1 1 9 2 2 , J U N E 1 9 7 3 S ILE C T t T R A N SISTO R S* FOR LO W -LEVEL, LOW-NOISE A U D IO A M P L IF IE R A PPLICATIO N S • For Complementary Use with P-N-P Types 2N 5086, 2IM5087, A 5T 5086, A 5T5087

2N5210

Abstract: 2N5209 2N5210 4 pin 2N5210 c N5209
Contextual Info: MOTOROLA Order this document by 2N5209/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2 N 52 09 2 N 5 2 10 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage VCEO 50 Vdc C o lle c to r-B a s e Voltage

2N5210

Abstract: 2n5209
Contextual Info: MOTOROLA Order this document by 2N5209/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2 N 52 09 2 N 5 2 10 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage VCEO 50 Vdc C o lle c to r-B a s e Voltage

ZTX109

Abstract: 2N5210 2N3906 transistor 2N5210 2N5086 2N5087 2N5209 BC550P BC560P BCY65EP
Contextual Info: TABLE 5 : NPN LOW NOISE The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. Max VcEisat at at Max Type Max. Noise Figure at Min fi­ hFE

low noise transistors

Abstract: BC550P ZTX109 2N3804 2N5086 2N5087 2N5209 2N5210 Scans-00106609 BCY65EP
Contextual Info: NPN LOW NOISE T A B LE 5 - NPN SILICO N PLANAR LOW N O ISE T R A N S IS T O R S The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. The devices are listed in order of decreasing collector/emitter breakdown voltage V CE0 ,

ztx214 Transistor

Abstract: 2N3904 70570 BC415P 2n4123 transistor ZTX109 DSAIH000142303. transistor 2N5210 BS3934
Contextual Info: ZETEX SEMICOND UCT ORS IbE D • ^70570 GGObam 5 ■ ZETB E-LINE SPECIFICATIONS ~ ^ „ I - c °l audio pre-amplifiers as well as universal applications The transistors on this page are characterised for low noise, low level amplification and are ideally suited for

2N6429

Abstract: J 2N2484 mpsa18 2N642B MPS-A09 2N2484 motorola 2N2483 SILICON SMALL-SIGNAL DICE MPS-6571 MPSA09
Contextual Info: MOTOROLA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC ^ * . * 3' . 34 DE J t>3fc.725S 0037T7t. □ 34C DIODES/OPTO 37976 1 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C2484 DIE NO. — NPN LINE SOURCE — DMB102 This die provides performance similar to that of the following device types:

low noise transistors

Abstract: 2N3904 ZTX109 ZTX239 2N4401 2N4403 ZTX530 BC213P BCY59P ZTX108
Contextual Info: PNP GENERAL PURPOSE TABLE 2 - continued Max Type V CBO V ceo Max 'c mA V h FE V c E s a t at lc mA mA 10 0 -5 Ib Min Max at Min fT at at Complement lc = 25°C lc mA MHz mA mW V V ZTX531 45 45 500 0 -7 BCY79P 45 45 200 0 -25 10 0 -25 120 460 ZTX213 45 30

MPSA18

Abstract: PN2484 2N5210 national 2N5088 2N5089 2N5210 2N5961 2N5962
Contextual Info: This I Material cr aIn Copyrighted a aa .rr ÜJ a xtn Cb » % /^ Device No. MPSA18 -a -v j •nJ By Its I National S e m Case Style TO-92 92 i c o n V CBO VCE0 ^EBO (V) Min (V) Min (V) Min 45 45 6.5 d u c t o 'cBO <"A) « Max 50 V m 30 400 500 500 500 ' '

ZTX109

Abstract: 2N5086 2N5087 2N5209 2N5210 BC550P BC560P BCY65EP BCY71P BCY77P
Contextual Info: TABLE 6 : PNP LOW NOISE The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. Type V CEO Max • Max VCE satl at 'c V h FE Min Max 'c 'c 'c

2N3904

Abstract: ztx51 MPS3645 2N4401 2N4403 BC183P BC213P BCY59P BCY79P ZTX108
Contextual Info: PNP GENERAL PURPOSE TABLE 2 - continued Max Type V CBO V ceo Max 'c mA V h FE V c E s a t at lc mA mA 10 0 -5 Ib Min Max at Min fT at at Complement lc = 25°C lc mA MHz mA mW V V ZTX531 45 45 500 0 -7 BCY79P 45 45 200 0 -25 10 0 -25 120 460 ZTX213 45 30

SE4021

Abstract: BC207B 2N4248 2N4249 BC207 pnp BC521 BC207 BC526 BC204 EN3962
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING V q eq (Cont’d) DEVIC EN O . Pola rity PNP Item NPN VCEO V Min 1 PN4250 40 a 2N4248 40 3 hFE hFE @ >c mA Mln/Max 250/700 50/- @ ic mA NF dB Max @f kHz NF dB Max

2SC1815GR

Abstract: 2SC1815BL 2N3693 2SC1815-GR 2SC1815-BL 2N5209 2N5210 2N5232 2N5232A 2SC1815
Contextual Info: TO-92 PLASTIC PACKAGE TRANSISTORS NPN Typ* No. 2N5209 VC80 VCE0 VEBO (V) Mn (V) Min (V) Min 50 50 5 'cso (UA) Max 0.050 VC8 (V) hFE Min 35 50 50 5 0.050 35 9 Max Cob 'c & VCE VCE(SH| ®^BE (Sal) ® •c Ices 0 vce (mA) (uA) (V) (mA) (V) (V) (V) (Pf) Min Max

SE4010

Abstract: SE4002 2N3565 SE4001 SE-4002 mps*6520 MPS-6571 2N5133 SE401 MPS3708
Contextual Info: TRANSISTO RS—SMALL SIGNAL NPN LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTO RS BY A SCEN D IN G VCEO PLASTIC PACKAGE V CEO NF dB @ f kHz M AX h FE ^FE NF VOLTS MIN h lF E MIN - M A X 2N5133 18 60 - 1000 @ 1.00 TO-106 MPS6571 20 250 - 1000 @ 0.10 TO-92 2N4968