2N5088 TRANSISTOR Search Results

2N5088

Abstract: 2N5089
Contextual Info: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage 2N5088 2N5089 Collector − Base Voltage 2N5088 2N5089 Emitter − Base Voltage

2N2089

Abstract: 2N2089RLRAG 2n5088 application note 2N5088 equivalent 2n5088 transistor 2N2089RLRA 2N2089RLRE 2N2089RLREG 2N5088 2N5088RLRA
Contextual Info: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5088 2N5089 Collector − Base Voltage Vdc 30 25 VCBO 2N5088

2N5088G

Abstract: 2N5088 equivalent 2n5088 transistor 2N5089 2n2089 2N2089RLRE 2N5088 2N5089G 2n5088 application note
Contextual Info: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com 3 COLLECTOR 2 BASE MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value Unit VCEO 2N5088 2N5089 Collector − Base Voltage Vdc VCBO

2N5088 equivalent

Abstract: 2N5088 2n5088 transistor 2N5089
Contextual Info: ON Semiconductort Amplifier Transistors 2N5088 2N5089 NPN Silicon MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous

2N5088

Abstract: 2n5089
Contextual Info: ON Semiconductort Amplifier Transistors 2N5088 2N5089 NPN Silicon MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous

2N5088 equivalent

Abstract: 2N5088 2N5089
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage

Contextual Info: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. 1 EBC ABSOLUTE MAXIMUM RATINGS for

2N5089

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage

2N5088 MOTOrola

Abstract: 2N5089 MOTOROLA 2N5088 equivalent 2n5088 transistor 2N5089 2N508 2N5088
Contextual Info: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5088 2N5089 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N508 8 2N508 9 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

2N5088 Cross Reference

Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

transistor 2n5088

Abstract: 2N5088 equivalent 2n5088 transistor ic str 6707 STR s 6707 2N5087 2N5088 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5088 NPN general purpose transistor Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistor

2n 5088 transistor

Abstract: SOT-23 CEB
Contextual Info: 2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier

Contextual Info: 2N 5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: = 2N5088: 3 0 V 2N5089: 25V • Collector Dissipation: Pc max =625mW V c eo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Characteristic Collector-Base Voltage

2N5088 equivalent

Abstract: 2N5088 2n5088 transistor 2N5089 2N5087 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

2N5087

Abstract: transistor 2N5086 2N5086 2n5088 transistor 2N5088 equivalent 2N5088 2N5089 ST transistor Semtech Electronics
Contextual Info: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.

hFE-200 to-92 npn

Abstract: 2N5087 hFE-200 transistor PNP 2N5086 2n5088 transistor ST transistor 2N5088 2N5089 hFE-150
Contextual Info: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.

hFE-200 to-92 npn

Abstract: 2N5087 2N5086 2n5088 transistor hFE-200 transistor PNP 2N5088 2N5089 hFE-200
Contextual Info: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.

2N5087

Abstract: transistor 2N5086 2N5087 equivalent 2N5086 2n5088 transistor 2N5088 2N5089
Contextual Info: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.

2N5088 equivalent

Abstract: ST transistor 2n5088 transistor 2N5086 2N5087 2N5088 2N5089 hfe 300
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

2N5089 equivalent

Abstract: 2N5088 equivalent ST transistor 2N5087 2N5089 2n5088 transistor transistor 2N5088 2N5086 2N5088
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bbS3T31 QDEfilbE 37fl 2N 5086 2N 5 087 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5088/2N5089.

Contextual Info: i i N ANER PHILIPS/DISCRETE b=JE » bb53T31 0DSfllb5 D67 2N5088 APX SILICON PLANAR EPITAXIAL TRANSISTOR NPN small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary type is 2N5086. QUICK REFERENCE DATA

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N5088 TRANSISTOR NPN 1. EMITTER 2. BASE FEATURES z General Purpose Amplifier Transistor z High DC Current Gain 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2N5088

Abstract: CBVK741B019 F63TNR PN2222N PN930
Contextual Info: PN930 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol