2N4125 TRANSISTOR Search Results

transistor 2N4125

Abstract: 2N4125 MOTOROLA 2N4125 2n4125 equivalent ku 602 vc transistor2N4125
Contextual Info: MOTOROLA Order this document by 2N4125/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N4125 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO

Contextual Info: 2N4125 2N4125 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

2n3904 2n3906

Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64

Contextual Info: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: V ceo =2N41 25: 30V 2N4126: 25V * Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO -3 0

Contextual Info: 2N4125 2N4126 _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO -92 packages, p rim a rily intended fo r low -pow er, small-signal a u d io ­ frequency a p p lica tio ns fo r consum er service.

2n4125 transistor

Abstract: 2N4125
Contextual Info: TOSHIBA 2N4125 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqbo ~ -50nA Max. @ Vqb _ -20V - l(£go ~ -50nA (Max.) @ V^g = -3V • Low Saturation Voltage - VCE(sat) = -0.4V (Max.) @ lc = -50mA, lB = -5mA

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bb53R31 ODBfllSE A IAPX 2N 4123 2N4124 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for low-power, small-signal audio­ frequency applications for consumer service. P-N-P complements are 2N4125 and 2N4126.

2N4126

Abstract: 2N4125 2N4125 NPN 2N4123 2N4124 UBB013
Contextual Info: 2N4125 2N4126 PHILIPS INTERNATIONAL SbE J> 711005b 0042bLj4 Ö02 M P H I N T-2^-/7 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO -92 envelopes, prim arily intended fo r low-power, small-signal audio­ frequency applications for consumer service.

Contextual Info: 4 TOSHIBA TRANSISTOR 2N4125 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. . Low Leakage Current : ICBO=_50nA(Max.) @ V c b =-20V lEBO=-50nA(Max.) @ V e B=-3V . Low Saturation Voltage : ^ C E ( s a t ) = ~ 0 .

2N5219

Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E sa t E b v CEO Device T yp e @ 1 0 m A -(V ) Min. M ax. @ l c (m A ) V c e (V ) NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N4124 2N4125 2N4126 2N4400

A5T4125

Contextual Info: TYPES 2N4125, 2N4126, A5T4125, A5T4126 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L - S 731 1 4 7 2 , J U L Y 1 9 7 1 - R E V lS E D M A R C H 1973 S IL E C T t T R A N S IS T O R S Î FOR G E N E R A L PURPOSE SA TU R A TED -SW ITC H IN G A N D A M P L IF IE R APPLIC A TIO N S

2n3904 409

Abstract: 2N4125 2N4126 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

2N4121

Abstract: 2N5219 2N5139 2N4126 2N4122 2N3566 TO-105 2N3566
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING V C E 0 PLASTIC PACKAGE (ALSO SEE LOW LEVEL AND HIGH VO LTAGE SECTION) hFE V CEO ^ob V C E (sat) tT toff PD \ <v c e r VOLTS TYPE MIN (hfe ) ) Ta @ ’c hFE

Contextual Info: N AMER PHILIPS/DISCRETE bTE bt.SB'm 0026154 2T1 D A APX £iN < ti< £o 2N4126 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelopes, primarily intended for low-power, small-signal audio­ frequency applications fo r consumer service.

BFS98

Abstract: 2N3906 ztx304 ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AM PLIFIERS, DRIVERS and OUTPUT STAG ES, O SCILLATORS, AND GENERAL PURPOSE

transistor ZTX302

Abstract: ZTX502 transistor ztx304 BFS98 ZTX109 ZTX452 transistor MPSA06 transistor ZTX108 BC546P BC556P
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and O UTPUT ST A G ES, O SC ILLA TO RS, AND GENERAL PURPO SE

BC546P

Abstract: BC556P BFS61 BFS98 MPSA06 MPSA56 ZTX451 ZTX452 ZTX453 ZTX551
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: A U D IO F REQ U EN C Y A M P L IF IE R S , D R IV E R S and O U T P U T S T A G E S , O S C IL L A T O R S , A N D G E N E R A L P U R P O S E

audio pre-amplifier bc109

Abstract: BFS98 for 2n3904 ZTX109 BC182P BC546P BCY65EP BFS61 ZTX114 MPSA05
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

bcy58

Abstract: BFS98 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451 ZTX452 ZTX453
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: A U D IO FREQ UENCY A M P LIF IER S, D R IV E R S and O U TPU T ST A G E S , O SC IL L A T O R S, A N D G EN ERA L PU RP O SE

ZTX109

Abstract: 2N5210 2N3906 transistor 2N5210 2N5086 2N5087 2N5209 BC550P BC560P BCY65EP
Contextual Info: TABLE 5 : NPN LOW NOISE The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. Max VcEisat at at Max Type Max. Noise Figure at Min fi­ hFE

bcy78

Abstract: BFS98 2N3906 BC559 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA06
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

ZTX3904

Abstract: BFS98 MPS3645 ZTX237
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

ZTX214

Abstract: ZTX108 BC546P BC556P BFS61 BFS98 MPSA06 MPSA56 ZTX451 ZTX452
Contextual Info: TABLE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AM PLIFIERS, DRIVERS and OUTPUT STAG ES, O SCILLATORS, AND GENERAL PURPOSE

low noise transistors

Abstract: BC550P ZTX109 2N3804 2N5086 2N5087 2N5209 2N5210 Scans-00106609 BCY65EP
Contextual Info: NPN LOW NOISE T A B LE 5 - NPN SILICO N PLANAR LOW N O ISE T R A N S IS T O R S The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. The devices are listed in order of decreasing collector/emitter breakdown voltage V CE0 ,