2N3C14 Search Results
2N3C14 Datasheets Context Search
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Contextual Info: MOS LSI TMS 4003 JR. TMS 4003 NC 258-BIT RANDOM-ACCESS MEMORY 09 x FOR MEMORY APPLICATIONS REQUIRING HIGH-SPEED READ/W RITE C AP A BILITY c > 3 < • Nondestructive readout • Static operation • System access time under 200 ns • Low power dissipation |
OCR Scan |
258-bit2n3c14135g144a2n3014+1 |