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    2N3906 PNP Search Results

    2N3906 PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TTA004B
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Datasheet
    2SA1943
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Datasheet

    2N3906 PNP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3906

    Abstract: 2n3906 specification 2N3904 2N3906-AP 2N3906 TO92 2N3906 TO-92
    Contextual Info: 2N3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3906 2N3906 TO-92 / Bulk 2N3906-AP 2N3906 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY


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    2n39062n3906-ap2n39042n3906 specification+22n3906 to922n3906 to-92 PDF

    2N3906 TO-92

    Abstract: 2N3906-AP 2N3906 2N3906 TO92 transistor ST 2N3904 2n3906 specification 2n3906 equivalent transistor 2N3904
    Contextual Info: 2N3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3906 2N3906 TO-92 / Bulk 2N3906-AP 2N3906 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY


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    2n39062n3906-ap2n39042n3906 to-92+42n3906 to92transistor st 2n39042n3906 specification2n3906 equivalent transistor PDF

    2N3906-AP

    Abstract: bex st 2N3906 2N3906-A 2n3906 specification Transistor TO-92 2N3906
    Contextual Info: 2N3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3906 2N3906 TO-92 / Bulk 2N3906-AP 2N3906 TO-92 / Ammopack s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t


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    2n39062n3906-ap2n3904bex st+32n3906-a2n3906 specificationtransistor to-92 2n3906 PDF

    2N3906

    Contextual Info: 2N3906 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3906 Availability Online Store


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    2n3906stv3208lm3909nlm3909 PDF

    TRANSISTOR MARKING CODE R2A

    Abstract: UMT3906 T3904 2N3906 MMST3906 SST3906 T106 T116 T146 Marking r2a
    Contextual Info: UMT3906/SST3906/MMST3906/2N3906 Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 / 2N3906 zExternal dimensions Unit : mm UMT3906 2.0±0.2 UMT3 SMT3 SST3 2.1±0.1 0 to 0.1 2.9±0.2 SST3906 2N3906 0.45±0.1 (2) (1) TO-92 0 to 0.1 0.2Min.


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    umt3906/sst3906/mmst3906/2n3906umt3906sst3906mmst3906+72n3906transistor marking code r2at3904t106t116t146marking r2a PDF

    2N3906

    Abstract: 2N3906 NPN Transistor 2n3906 specification 2N3906S 2N3904 2n3904 applications
    Contextual Info: 2N3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ Type Marking 2N3906 2N3906 SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS 2N3904 APPLICATIONS WELL SUITABLE FOR TV AND HOME


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    2n39062n39042n3906 npn transistor2n3906 specification+22n3906s2n3904 applications PDF

    transistor 131 8D

    Abstract: TRANSISTOR MARKING CODE R2A 2N3906 UMT3906 2n3906 hie 2n3906 transistors transistor 2n3906 2N3904 MMST3904 MMST3906
    Contextual Info: UMT3906 / SST3906 / MMST3906 / 2N3906 Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 / 2N3906 !External dimensions Units : mm !Features 1) BVCEO < -40V (IC=-1mA) 2) Complements the UMT3904 / SST3904 / MMST3904 / 2N3904. 2.0±0.2


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    umt3906sst3906mmst39062n3906+9umt3904sst3904transistor 131 8dtransistor marking code r2a2n3906 hie2n3906 transistorstransistor 2n39062n3904mmst3904 PDF

    PNP switching transistor 2N3906

    Abstract: 2N3906V PNP switching transistor 2N3906 mhz 2N3906 transistor by philips
    Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2N3906 PNP switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jun 20 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES


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    2n39062n3904115002/00/03/pp8pnp switching transistor 2n3906+32n3906vpnp switching transistor 2n3906 mhz2n3906 transistor by philips PDF

    transistor 2n3906

    Abstract: high gain low voltage PNP transistor TO-92 ALL DATA SHEET PNP switching transistor 2N3906 mhz PNP switching transistor 2N3906 2N3906 2N3904 plastic npn, transistor, sc 103 b 2N3904 NPN Transistor 2n3906 specification
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3906 PNP switching transistor Product specification Supersedes data of 1999 Apr 23 2004 Oct 11 Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING • Low current max. 200 mA


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    m3d1862n39062n3904mam280+11sca76r75/04/pp7transistor 2n3906high gain low voltage pnp transistor to-92all data sheetpnp switching transistor 2n3906 mhzpnp switching transistor 2n39062n3904 plasticnpn, transistor, sc 103 b2n3904 npn transistor2n3906 specification PDF

    transistor 2n3906

    Abstract: PNP switching transistor 2N3906 2N3904 2N3906 BP317 2N3906 TO92 transistor ST 2N3904 2N3904 philips
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3906 PNP switching transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 23 Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING • Low current max. 200 mA


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    m3d1862n39062n3904mam280+8sca63115002/00/03/pp8transistor 2n3906pnp switching transistor 2n3906bp3172n3906 to92transistor st 2n39042n3904 philips PDF

    MMBT3906

    Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 Absolute Maximum Ratings*


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    2n3906mmbt3906pzt3906ot-23+1ot-223 PDF

    2n3906 2a

    Abstract: TR 3906 PNP SM SOT-23 EBC 2n3906 sot23 2N3906 2N3906TAR 2N3906BU 2N3906 EBC 2N3906 SOT 23 2A 3906
    Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 Absolute Maximum Ratings*


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    2n3906mmbt3906pzt3906ot-23+92n3906 2atr 3906 pnp smsot-23 ebc2n3906 sot232n3906tar2n3906bu2n3906 ebc2n3906 sot 232a 3906 PDF

    Contextual Info: 2N3905 2N3906 PNP SILICON PLANAR EPITAXIAL TRANSI STOBS THE 2N3905 AND 2N3906 ABE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLIMENTARY TO 2N3903 AND 2N3904 RESPECTIVELY.


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    2n39052n39062n39032n3904+4t0-92a100mhz100khz100jua PDF

    Contextual Info: 2N3906 2N3906 Si-Epitaxial-Planar Switching Transistors Si-Epitaxial-Planar Schalttransistoren PNP PNP Version 2006-09-12 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca.


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    2n3906ul94v-02n3904 PDF

    2n3906

    Abstract: MMBT3906
    Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A


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    2n3906mmbt3906pzt3906ot-23+2ot-2232n3906bu PDF

    Mmbt3906

    Abstract: 2N3906
    Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 B Mark:2A EBC C SOT-223


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    2n3906mmbt3906pzt3906ot-23+2ot-2232n3906bu PDF

    2N3906

    Abstract: 2N3906 die 2N3906 fairchild die 728p MMBT3906 MMPQ3906 PZT3906
    Contextual Info: 2N3906 / MMBT3906 / PZT3906 2N3906 MMBT3906 C E C B TO-92 B SOT-23 E Mark: 2A PZT3906 C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced


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    2n3906mmbt3906pzt3906ot-23+5ot-2232n3906 die2n3906 fairchild die728pmmpq3906 PDF

    PNP switching transistor 2N3906 mhz

    Abstract: transistor 2N3905 2n3906 2N3906 NPN Transistor 2N3904 CENTRAL
    Contextual Info: 2N3905 2N3906 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3905 and 2N3906 types are PNP silicon transistors designed for general purpose amplifier and switching applications. NPN complementary types are 2N3903 and 2N3904.


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    2n39052n39062n39032n3904+7100ma100mhz100khzpnp switching transistor 2n3906 mhztransistor 2n39052n3906 npn transistor2n3904 central PDF

    2N3906

    Abstract: mmbt3906 tr 2n3906 MPQ3906
    Contextual Info: 2N3906/MMBT3906/MPQ3906 National Semiconductor 2N3906 MMBT3906 MPQ3906* TO—116 T O - 92 T L /G /1 0 1 0 0 -7 T L /G /1 0 1 0 0 -5 PNP General Purpose Amplifier Electrical Characteristics T a = 25°C unless otherwise noted Parameter Symbol Min Max Unite OFF CHARACTERISTICS


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    2n3906/mmbt3906/mpq39062n3906mmbt3906mpq3906+1tr 2n3906 PDF

    2n3906

    Abstract: 100khz 5v transistor
    Contextual Info: 2N3906 2N3906 TRANSISTOR PNP FEATURE Power dissipation TO-92 PCM : 0.625 W (Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V V(BR)CBO : -40 Operating and storage junction temperature range 1.EMITTER 2.BASE 3. COLLECTOR 1 2 3 TJ, Tstg: -55℃ to +150℃


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    2n3906100khz-10ma100mhz+1100khz 5v transistor PDF

    model of 2n3906

    Contextual Info: MMBT3906 PZT3906 C C C B E TO-92 E B SOT-23 B SOT-223 E C Mark: 2A 2N3906 / MMBT3906 / PZT3906 2N3906 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. Sourced


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    2n3906mmbt3906pzt3906ot-23+2ot-223model of 2n3906 PDF

    MMBT3906

    Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A


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    2n3906mmbt3906pzt3906ot-23+2ot-2232n3906bu PDF

    MMBT3906 spice

    Abstract: 2N3906 2N3906 die 728p 200H MMBT3906 MMPQ3906 PZT3906 LS141
    Contextual Info: 2N3906 / MMBT3906 / PZT3906 FAIRCHILD S E M IC O N D U C T O R tm 2N3906 C MMBT3906 •# TO-92 BÎ SOT-23 B Mark: 2A PZT3906 SOT-223 PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents of 10 nA to 100 mA. Sourced


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    2n3906pzt3906ot-223mmbt3906+7ot-23mmbt3906 spice2n3906 die728p200hmmpq3906ls141 PDF

    Contextual Info: 2N3906 / MMBT3906 F A IR C H IL D S E M IC O N D U C T O R tm 2N3906 ' BE # TO-92 SOT-23 / PZT3906 C MMBT3906 B Mark: 2A PZT3906 B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents of 10 ¡iA to 100 mA. Sourced


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    2n3906mmbt3906ot-23pzt3906+3ot-223bt3906mmpq3906 PDF