transistor 2N3819
Abstract: 2N3819 2N3819 equivalent 2n3819 transistor 2N3819 fairchild 2n3819 datasheet 2N3819 application N-Channel RF Amplifier
Contextual Info: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor
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2n3819450mhztransistor 2n38192n3819 equivalent+52n3819 transistor2n3819 fairchild2n3819 datasheet2n3819 applicationn-channel rf amplifier
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Contextual Info: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor
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2n3819450mhz |
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Contextual Info: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source NPN Epitaxial Silicon Transistor
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2n3819450mhz |
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BC237
Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
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1ss383t12n38192n39032n3904+162n39062n44012n44032n50872n50882n5089bc237bc847bpdw1t1 seriesbc548low noise transistors bc638cbc550cbc3072n5550* surface mountbc212bsr58lt1nsdemn11xv6t1
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2N3819
Contextual Info: 2N3819 w w w. c e n t r a l s e m i . c o m SILICON N-CHANNEL JFET The CENTRAL SEMICONDUCTOR 2N3819 is a silicon N-Channel JFET designed for RF amplifier and mixer applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C Drain-Gate Voltage
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2n3819100mhz |
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2N3819 equivalent
Abstract: 2N3819 2N4416 Siliconix
Contextual Info: 2N3819 Siliconix NĆChannel JFETs Product Summary VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v -8 -25 2 2 Features Benefits Applications D Excellent HighĆFrequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion
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2n3819p-37407--rev2n3819 equivalent2n4416 siliconix |
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2N3819 equivalent
Abstract: 2n3819 equivalent for 2N3819 jedec package TO-226AA
Contextual Info: 2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY Vgs<o«> V < V{brjgss Min (V) g1#Min (mS) -2 5 2 lo s s Min (mA) 2 FEATURES BENEFITS APPLICATIONS • Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz • Very Low Noise: 3 dB @ 400 MHz • Very Low Distortion
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2n381904-jun-012n3819 equivalentequivalent for 2n3819+1jedec package to-226aa
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2N3819 equivalent
Abstract: 2N3819 Jfet 70238 equivalent for 2N3819 2n4416 jfet Siliconix JFET transistor 2N3819 high transconductance JFET TO72 package n-channel jfet 2N3819 application
Contextual Info: 2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion
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2n381904028--rev04-jun-012n3819 equivalent+8jfet 70238equivalent for 2n38192n4416 jfetsiliconix jfettransistor 2n3819high transconductance jfetto72 package n-channel jfet2n3819 application
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Contextual Info: One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3819 N-Channel RF Amplifier w • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low
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2n3819450mhz86max |
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2N3819 equivalent
Abstract: TEMIC 2N3819 transistor 2N3819 2N3819 2n4416 jfet Siliconix JFET Siliconix N-Channel JFET equivalent for 2N3819 2N4416 Siliconix Siliconix
Contextual Info: 2N3819 Siliconix N-Channel JFET PRODUCT SUMMARY VGS off (V) V(BR)GSS MIN (V) gfs MIN (MS) IDSS MIN (MA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion
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2n3819s-52424--rev14-apr-972n3819 equivalent+8temic 2n3819transistor 2n38192n4416 jfetsiliconix jfetsiliconix n-channel jfetequivalent for 2n38192n4416 siliconixsiliconix
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2N3819 equivalent
Abstract: transistor 2N3819 2N3819
Contextual Info: 2N3819 N-Channel JFET Product Summary VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 Features Benefits Applications D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation
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2n3819s-52424--rev14-apr-972n3819 equivalent+1transistor 2n3819
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2n3819
Abstract: 2N3819 Application Note 2N3819 equivalent 2N3819 application 2n3819 datasheet 2N3819 data transistor 2N3819 N CHANNEL JFET 2N3819 J-FET 2N3819 2N 3819
Contextual Info: 2N3819 JFET VHF/UHF Amplifier N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc ID 100 mAdc Forward Gate Current IG f 10
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2n3819r145252n3819/d2n3819 application note+82n3819 equivalent2n3819 application2n3819 datasheet2n3819 datatransistor 2n3819n channel jfet 2n3819j-fet 2n38192n 3819
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2N3819 equivalent
Abstract: equivalent for 2N3819 2n3819
Contextual Info: 2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion
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2n381908-apr-052n3819 equivalentequivalent for 2n3819 |
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2N3819
Abstract: 2N3819 Application Note N CHANNEL JFET 2N3819
Contextual Info: 2N3819 JFET VHF/UHF Amplifier N–Channel – Depletion MAXIMUM RATINGS http://onsemi.com Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc ID 100 mAdc Forward Gate Current IG f 10 mAdc Total Device Dissipation
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2n3819r145252n3819/d2n3819 application note+1n channel jfet 2n3819
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2N3819 equivalent
Abstract: transistor 2N3819 equivalent for 2N3819 2N3819 2N3819 Application Note 2N3819 application 2n3819 datasheet 2n4416 jfet Siliconix JFET TO72 package n-channel jfet
Contextual Info: 2N3819 N-Channel JFET Product Summary VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 Features Benefits Applications D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation
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2n3819p-37407--rev04-jul-942n3819 equivalent+8transistor 2n3819equivalent for 2n38192n3819 application note2n3819 application2n3819 datasheet2n4416 jfetsiliconix jfetto72 package n-channel jfet
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2N3819 equivalent
Abstract: 2N3819 equivalent for 2N3819 2n3819 equivalent ic J-FET 2N3819
Contextual Info: Tem ic Silicon!» _ 2N3819 N-Channel JFETs Product Summary V BR GSS M in (V) < -8 -2 5 l o s s M in (mA) .J:, gfs M in (m S) 2 2 Features Benefits Applications • • W ideband H igh G ain • H ig h -F req u en cy A m plifier/M ixer
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2n3819p-37407--rev2n3819 equivalentequivalent for 2n3819+22n3819 equivalent icj-fet 2n3819
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TEMIC 2N3819
Abstract: 2N3819 equivalent 2n3819 equivalent ic 2n3819
Contextual Info: Temic 2N3819 S e m i c o n d u c t o r s N-Channel JFET Product Summary V cS off ( V ) V (B R )G S S M i n (V ) < -8 gfs Min (mS) IDSS Min(mA) 2 -25 2 Features Benefits Applications • Excellent High-Frequency Gain: Gps It dB @ 400 MHz • Very Low Noise: 3 dB @ 400 M Hz
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2n3819s-52424--14-apr-97temic 2n3819+22n3819 equivalent2n3819 equivalent ic
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5T3824
Abstract: ME1600 5T3821 2N3819 Texas Instruments
Contextual Info: TYPE 2N3819 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 6 8 8 0 4 7 , A U G U S T 1 9 6 5 - R E V IS E D M A Y 1968 S IL E C T t F IE L D -E F F E C T T R A N S IS T O R * • For Industrial and Consumer Small-Signal Applications
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2n38195t38215t3824me1600+12n3819 texas instruments
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306-803
Abstract: 2N3819 application 741 opamp 2N3819 Application Note 2N3819 transistor 2N3819 opamp 741 RS 305-636
Contextual Info: Issued November 1983 J2983 Electronic attenuator Stocknumber 306-803 A silicon monolithic gain controlled A.C. amplifier programmed by an external D.C voltage or resistor. Applications include remote volume controls, speech compressors and expandor circuits. The device is
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j2983100mv2n3819306-803+62n3819 application741 opamp2n3819 application notetransistor 2n3819opamp 741rs 305-636
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306-803
Abstract: 741 opamp 4.7k Preset 741 op-amp compressor audio use transistor 2N3819 Application Note 400V to 6V DC Regulator transistor 2N3819 opamp 741 audio compressor
Contextual Info: Issued November 1983 002-983 Data Pack J Electronic attenuator Data Sheet RS stock number 306-803 A silicon monolithic gain controlled ac amplifier programmed by an external dc voltage or resistor. Applications include remote volume controls, speech compressors and expander circuits. The device is
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20vdc100mv306-803741 opamp+84.7k preset741 op-ampcompressor audio use transistor2n3819 application note400v to 6v dc regulatortransistor 2n3819opamp 741audio compressor
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306-803
Abstract: 4.7k Preset 741 opamp 2N3819 Application Note 1M preset 741 op-amp 2N3819 application audio compressor transistor 2N3819 rs amplifier 741
Contextual Info: Issued March 1997 232-2245 Data Pack J Electronic attenuator Data Sheet RS stock number 306-803 A silicon monolithic gain controlled ac amplifier programmed by an external dc voltage or resistor. Applications include remote volume controls, speech compressors and expander circuits. The device is
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20vdc100mv306-8034.7k preset+8741 opamp2n3819 application note1m preset741 op-amp2n3819 applicationaudio compressortransistor 2n3819rs amplifier 741
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2N4303
Abstract: 2N3437 2n3866 noise 2N5566 2N4039 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161
Contextual Info: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES
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dqd01442n30692n40382n4339+142n34362n40392n43912n34372n40912n43922n43032n3866 noise2n55662n43042n4393uhf vhf amplifieruhf uhf transistorsbf161
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T018
Abstract: t018 transistor 2N4303 2n4304 BF161 UHF UHF Transistors transistor t052 2N4221 transistor 2N4095 uhf transistor amplifier
Contextual Info: diode TR ANS ISTOR CO INC A4 DE I 5 5 4 5 3 5 5 0000144 T \ ^ D1QDE TRdf\l515TQR CQ.,lf\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5863 _ SILICON FIELD EFFECT TRANSISTORS- •N— CHANNEL DEVICES
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2n30692n40382n43392n3436+162n40392n43912n34372n40912n43922n3686t018t018 transistor2n43032n4304bf161uhf uhf transistorstransistor t0522n4221 transistor2n4095uhf transistor amplifier
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2N4039
Abstract: 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4038 2N4221
Contextual Info: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES
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dqd01442n30692n40382n4339+142n34362n40392n43912n34372n40912n43922n43032n4304t018 transistort0182n4417t071uhf vhf amplifier2n4221
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