2N364 Search Results

2N3644

Abstract: 2N3638 2N3638A 2N3645 CIL297 2N4356 2N4354 2N4355 CIL295 CIL296
Contextual Info: TO-105 EPOXY PACKAGE TRANSISTORS PNP M ax m um P ating s 2N4356 V CEO (V) Min (V) Min BO SO V EBO (V) Min 5.0 'cBO (MA) Max 0.05 VCB (V) Min 50 60 60 5.0 Max 60 5.0 0.05 50 2N3644 60 45 60 45 5.0 5.0 0.05 0.04 50 30 (V) Max Max & V BE(Sat) (V) Min Max

2N3638

Abstract: 2N3644 2N3645 2N3638A CIL297 2N4354 2N4355 2N4356 CIL295 CIL296
Contextual Info: TO-105 EPOXY PACKAGE TRANSISTORS PNP M a x m u m P a t in g s 2N4356 V CBO V CEO V EBO (V) Min (V) Min (V) BO SO Min 5.0 'cBO (MA) Max 0.05 VCB (V) Min 50 60 60 5.0 Max 60 5.0 0.05 50 2N3644 60 45 60 5.0 45 5.0 0.05 0.04 50 30 (V) Max Max & V BE(Sat)

General electric SCR

Abstract: General electric SCR manual SCR Inverter c-141 General electric SCR manual c141 c141c IC-141 GE SCR Manual scr c385 GE 12 volt 25 amp scr power supply
Contextual Info: C234, C235 GE TYPE C138 1 JEDEC ELECTRICAL SPECIFICATIONS VOLTAGE RANGE_ S M 0 0 _ _ 5 0 0 I800 C139 C140 C141 C144 - 2N3649-53 2N3654-58 - JOO ] m 50-400 50-400 5^6» FORWARD CONDUCTION Max. RMS on-state current @ TV = •t ( r m s ) 65°C, 50% duty (A)

2n3644

Abstract: max 1788 2N364
Contextual Info: 2N3644 Si PNP LP HF BJT 17.88 Transistors Transistors Bipolar Si PN. 1 of 2 Home Part Number: 2N3644 Online Store 2N3644 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N3643

Abstract: 2N3643 TO-105
Contextual Info: 2N3643 Si NPN LP HF BJT 0.95 Transistors Bipolar Silicon NPN Low. 1 of 1 Home Part Number: 2N3643 Online Store 2N3643 Diodes Si NPN LP HF BJ T Transistors Enter code INTER3 at Integrated Circuits checkout.*

2N3643

Abstract: 2N3642 2N3641 PN3641 PN3643 T0-105
Contextual Info: Central Sem iconductor Corp. Central Sem iconductor Corp. 2N36A1 2N3642 2N3643 +1 PN3641 PN361t2 PN36^3 JEDEC T0-105 JEDEC TO-92 NPN SILICON SIGNAL TRANSISTORS 14 5 Adam s Avenue Hauppauge, N ew Y ork 1 1 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3641 , PN36A1 Series types are Silicon NPN Small Signal

2n3638

Contextual Info: TO-105 EPOXY PACKAGE TRANSISTORS PNP Maxim um R atin gs 2N4356 2N364S V CBO VCEO V EBO (V) Min (V) Min (V) Min BO B0 5.0 60 2N4354 2N4355 2N3644 60 60 45 60 60 60 45 IcBO (MA) Max 0.05 V CB (V) Min 50 5.0 5.0 5.0 5.0 »FE Max 0.05 0.04 50 50 30 VCE(Sat)

Contextual Info: • " 7 2 '9 4 - 6 2 1 POW EREX 74 IN C DË1 7 5 ^ 5 1 DD011H0 3 5 .2 Condensed Electrical And Thermal Characteristics And Ratings INVERTER SCRs 8 TO 275 AMPERES 107 108 108.1 230.2 C124 GETYPE JEDEC TYPE - • C140 C141 2N3649-50 2N3654-50 C49/C149 - C148

2N3646

Abstract: 2N5772 PN3646 2N36A6 30 YA
Contextual Info: Central Semiconductor Corp. 2N3646 2N5772 PN3646 JEDEC T0-106 JEDEC TO-92 NPN SILICON SWITCHING TRANSISTORS 1 4 5 Adam s Avenue Hauppauge, New Y ork 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N/PN3646, 2N5772 Series types are Silicon PNP Transistors designed for ultra high speed switching applications,

2n3646

Contextual Info: 2N3646 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3646 Availability Online Store

Contextual Info: m 2N3645-92 \ \ SILICON PNP TRANSISTOR DESCRIPTION: The 2N3645-92 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 500 mA V -60 V ce P diss 700 mW @ Tc = 25 °C Tj -55 °C to +125 °C T -55 °C to +125 °C stg 0JC 143 °C/W

C144

Abstract: C234 100-c23 C140D C235 C234A C144E15 c141 C138 C139
Contextual Info: C234, C235 GE TYPE - JEDEC C138 1 - C139 C140 C141 C144 - 2N3649-53 2N3654-58 - JO O ] m 50-400 50-400 5 ^6 » ELECTRICAL SPECIFICATIONS VOLTAGE RANGE_ S M 0 0 _ _ 5 0 0 I800 FORWARD CONDUCTION Max. RMS on-state current @ TV =

2n3645

Abstract: 2N3645-92
Contextual Info: 2N3645-92 SILICON PNP TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 92 LEAD FORMED The 2N3645-92 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 5OO mA -6O V P d is s 7OO mW @ Te = 25 0C o < m Ie Tj -55 0C to +125 °C T stg

2n3641

Abstract: Transistors Diodes
Contextual Info: 2N3641 Si NPN Lo-Pwr BJT 0.70 Transistors Bipolar Silicon NPN Low. 1 of 2 Home Part Number: 2N3641 Online Store 2N3641 Diodes Si NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

Contextual Info: 2N3643 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50nx @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

2N3648

Abstract: TO206AB
Contextual Info: MOTOROLA SC 12E 0 I b3b?25M 0001,353 â XSTRS/R F r-35"-/7 I 2N3648 CASE 26-03, STYLE 1 TO-46 TO-206AB MAXIMUM RATINGS Symbol Value Collector-Emitter Voltage Rating VcEO 15 Unit Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current — Continuous

2N3645

Abstract: 25n60 60N60
Contextual Info: 2N3645 Si PNP LP HF BJT 12.50 Transistors Transistors Bipolar Si PN. 1 of 2 Home Part Number: 2N3645 Online Store 2N3645 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N3640

Contextual Info: 2N3640 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3640 Availability Online Store

2N8504

Abstract: MCR225-2FP C40F T400001008 Hutson
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number SeRs, VDRM 5 10 S0512R TYP512 2N1843B BTW49•50 S0515l SWT682 C36F T40000100800 T40000101800 T40000100600 ~t.tOU516 A 'u 15 20 S0516R 2N6400 2N3649 2N3654 HSE5010 MCR569·2 2N682A IS020 ~~puig20 25 30

2N3643

Abstract: opamp 747 AN80901 3.3k variable resistor AN8090 resistor 3.3k FET LNA 747 opamp eastern nec microwave
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN80901 Two Stage GaAs FET LNA Bias Supply INTRODUCTION This regulator is recommended to bias a two stage, grounded source GaAs FET LNA with constant drain currents1. With minor modification, two additonal bias stages could be added to this circuit.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

2N3569

Abstract: 2N3643 TO-105 2N3643 2N3566 2N3642 2N3646 CIL596 2N3567 CIL761 CIL762
Contextual Info: T0-1Ó5 EPOXY PACKAGE TRANSISTORS NPN Type No. VCBO V CEO (V) (V) V EBO (T a = 2 5 ° C , U n l e s s O t h e r w is e S p e c i f ie d ) E le c t r ic a l C h a r a c t e r is t ic s M a x im u m R a t in g s IcBO V CB d •¥ e (MA) (V) Max Min Max