2N3637 DATA Search Results

2N3637 semicoa

Abstract: 2N3637
Contextual Info: Data Sheet No. 2N3637 Generic Part Number: 2N3637 Type 2N3637 Geometry TBD Polarity PNP Qual Level: Pending REF: MIL-PRF-19500/357 Features: • • • • General-purpose high gain, low power amplifier transistor which operates over a wide temperature range.

2N3635 MOTOROLA

Abstract: 2N3635 2N3637 2N3634 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N3635/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3635 2N3637 PNP Silicon 2 BASE 1 EMITTER 3 Rating Symbol 2N3635 2N3637 Unit Collector – Emitter Voltage VCEO – 140 – 175

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier.

2N3636

Abstract: 2N3635 2N3637
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier.

2N3636

Abstract: 2N3637 2N3635
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching

2N3635

Abstract: 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3637 JAN 2N3634L 2N3635L 2N3636L
Contextual Info: TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L Qualified Level JAN JANTX JANTXV JANS 2N3637 2N3637L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

TRANSISTOR C 3068

Abstract: 2n3637 data 2N3637
Contextual Info: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • High Voltage Switching 12.70 (0.500) min. • Low Power Amplifier Applications 0.89 max. (0.035)

TRANSISTOR C 3068

Abstract: 2N3637
Contextual Info: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • High Voltage Switching 12.70 (0.500) min. • Low Power Amplifier Applications 0.89 max. (0.035)

2N3634 MOTOROLA

Abstract: 2N3636 2N3635 MOTOROLA 2N3634 2N3637
Contextual Info: 2N3634 thru 2N3637 M AXIM U M RATINGS Symbol 2N3634 2N363S 2N3636 2N3637 U n it C o lle c to r-E m itte r V o lta g e v CEO -1 4 0 -1 7 5 Vdc C o lle c to r-B a s e V o lta g e v CBO - 140 -1 7 5 Vdc E m itte r-B a se V olta g e v EBO Rating - 5 .0 1.0 A de

TRANSISTOR C 3068

Abstract: transistor pnp 30V 1A 1W 3501DCSM 2n3637csm-jqr-b transistor npn 30V 1A 1W 3501D
Contextual Info: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • High Voltage Switching 12.70 (0.500) min. • Low Power Amplifier Applications 0.89 max. (0.035)

2n3637

Abstract: 2N3636 2N3635 2N3634
Contextual Info: TECHNICAL DATA 2N3634, 2N3634L JTX, JTXV 2N3635, 2N3635L JTX, JTXV 2N3636, 2N3636L JTX, JTXV 2N3637, 2N3637L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/357 PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

TRANSISTOR C 3068

Contextual Info: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • High Voltage Switching 12.70 (0.500) min. • Low Power Amplifier Applications 0.89 max. (0.035)

Contextual Info: ^e.mi-Condwiko'i ZPtoauct*, LJna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N3637 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON TRANSISTOR gjtjgliili > FEATURES • High Voltage Switching

Contextual Info: TECHNICAL DATA 2N3634/ L, JTX, JTXV, JANS 2N3635/ L, JTX, JTXV, JANS 2N3636/ L, JTX, JTXV, JANS 2N3637/ L, JTX, JTXV, JANS MIL-PRF QML DEVICES Processed per MIL-PRF-19500/357 PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ratings Symbol S2N3634, L S2N3636, L Unit

TRANSISTOR C 3068

Contextual Info: SILICON PNP TRANSISTOR 2N3637 • • • • • General Purpose PNP Silicon Transistor High Voltage, High Speed Saturated Switching Low Power Amplifier Applications Hermetic TO39 Package Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

2N3634

Abstract: 2N3635 JAN 2N3637 2N3635
Contextual Info: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Product Preview Low Power Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C unless otherwise noted

2C3637KV

Abstract: chip type geometry Semicoa
Contextual Info: Data Sheet No. CP3637 2N3636, 2N3636L 2N3637, 2N3637L Chip Type 2C3637KV Geometry 0820 Polarity PNP REF: MIL-PRF-19500L/357 27 MILS B E 27 MILS Chip type 2C3637KV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance

2n3637

Contextual Info: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted

2N3635

Abstract: 2n3634
Contextual Info: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted

Contextual Info: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) FEATURES • High Voltage Switching 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x .

2N3637

Contextual Info: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) FEATURES • High Voltage Switching 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x .

Contextual Info: TYPES 2N3634 THRU 2N3637 P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 1 1 9 3 4 , J U N E 1 9 7 3 H IG H -V O LT A G E TRAN SISTO RS FOR G EN ER A L PURPOSE A M P L IF IE R A N D SW ITCH IN G APPLICATIO N S • High V B R C EO . . . 140 V (2N 3634, 2N 3635) or 175 V (2N 3636, 2N 3637)

2n3634

Abstract: 2N3634 MOTOROLA
Contextual Info: 2N3634 M A X IM U M RATINGS thru Symbol 2N3634 2N3635 2N3636 2N3637 Unit C o lle c to r-E m itte r V olta g e v CEO -1 4 0 -1 7 5 Vdc C o lle c to r-B a se V o lta g e VCBO -1 4 0 -1 7 5 Vdc Rating E m itte r-B a se V o lta g e - 5 .0 vebo >c - 1 .0 Ade T o ta l D evice D issip a tio n

2N3636 transistor

Abstract: 2N3635 10VDC 2N3637UB 2N3637 2N3636 2N3634 2n3635ub 50krads 2N363
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L