2N3501 JANTX Search Results

Contextual Info: 2N3498 thru 2N3501 Qualified Levels: JAN, JANTX, JANTXV and JANS NPN SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/366 DESCRIPTION This family of 2N3498 thru 2N3501 epitaxial planar transistors are military qualified up to a

2N2992

Abstract: 23028 2N3016 JANTX2N3440
Contextual Info: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S

2N3501

Contextual Info: 2N3501 Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3501J • JANTX level (2N3501JX)

2N3501

Abstract: 2N3500 2N3501 JANTX 2N3499 2N3498 2N349 2N3498L 2N3499L 2N3500L 2N3501L
Contextual Info: TECHNICAL DATA NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Devices 2N3498 2N3498L 2N3499 2N3499L 2N3500 2N3500L Qualified Level JAN JANTX JANTXV JANS 2N3501 2N3501L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

2n3501 JANTX

Abstract: 2N3501 2N3501J 2N3501JS 2N3501JV 2N3501JX
Contextual Info: 2N3501 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3501J • JANTX level (2N3501JX)

2N3501

Abstract: 2N3501J 2N3501JS 2N3501JV 2N3501JX MIL-PRF-19500/-2N3501
Contextual Info: 2N3501 Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3501J • JANTX level (2N3501JX)

Contextual Info: 2N3501 Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3501J • JANTX level (2N3501JX)

150M

Abstract: 2N3501
Contextual Info: 2N3501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)

Contextual Info: 2N3501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)

Contextual Info: 2N3501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)

Contextual Info: 2N3501+JANTX Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)300m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100

EIA-418D

Abstract: 2N3501U4
Contextual Info: 2N3501UB Qualified Levels: JAN, JANTX, JANTXV AND JANS NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 DESCRIPTION This 2N3501 epitaxial planar transistor is military qualified up to a JANS level for highreliability applications. This device is also available in thru hole TO-5 and TO-39 packaging as

msc ls1

Contextual Info: 2N3501UB Qualified Levels: JAN, JANTX, JANTXV AND JANS RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 DESCRIPTION This 2N3501 epitaxial planar transistor is military qualified up to a JANS level for highreliability applications. This device is also available in thru hole TO-5 and TO-39 packaging as

Contextual Info: 2N3501+JANTXV Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)300m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100

2n3498

Contextual Info: 2N3498L thru 2N3501L Qualified Levels: JAN, JANTX, JANTXV and JANS NPN SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/366 DESCRIPTION This family of 2N3498L thru 2N3501L epitaxial planar transistors are military qualified up to a

2N3501U4

Abstract: 2N3499U4
Contextual Info: 2N3498U4 thru 2N3501U4 Qualified Levels: JAN, JANTX, and JANTXV NPN SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/366 DESCRIPTION This family of 2N3498U4 through 2N3501U4 epitaxial planar transistors are military qualified

2N5416 MOTOROLA

Abstract: CV8616 2N3501 MOTOROLA 2N5415 MOTOROLA 2N5681 motorola 2N2368 2N3114 2N4033 2N5231 2N4236 MOTOROLA
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

SP2605F

Abstract: 2N2222A raytheon low noise transistors rf 2N4033 2N0720A 2N0718A 2n2907a raytheon 2N065 SP2605QF "dual TRANSISTORs" pnp npn
Contextual Info: Small Signal Transistors Small Signal Transistors Hermetic Seal Raytheon Semiconductor offers a wide variety of Industry standard and sole source high reliability (JAN, JANTX, Product 2N0657* 2N0697* 2N0706* 2N0718A 2N0720A* 2N0910* 2N0918 2N0930 2N1131"

2H2222A

Abstract: 2H2222 2n6989
Contextual Info: at < BIPOLAR PACKAGE TO-18 TO-39 QUAD 14 PIN QUAD FLAT PAK PEAK DEVICE BVCEO •c h PE V CE sat TYPE VOLTS A M PS m in / m a x VOLTS 2H2222A*’ 40 800 100/300 0.3 150/15 2N2369A* 15 300 20/120 0.2 10/1.0 mA PEAK DEVICE B»CEO «C hF{ V CE (sa l) TYPE

2N3440 MOTOROLA

Abstract: CV8616 2N2222A motorola 2N2905 MOTOROLA BC107-108-109 2n3439 motorola 2N3501 MOTOROLA 2N2222A JANTX bc107108109 motorola transistor 2N2907A
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued Choppers Devices are listed in decreasing V (b r )E B O - Offset Voltage Package TO-46 Device 2N2946 2N2946A 2N5230 2N5231 2N2945A 2N2945 2N5229 V(BR)EBO Min 40 40 30 30 25 25 15 V(BR)ECO 35 35 20 20 20 20 10 Min

JANTX2N3501

Abstract: JANTX2N1711 JAN2N2219AL jan2n1893 JAN2N1893S JANTX2N2219
Contextual Info: Micmsemi NPN Transistors Part Number NPN JAN2N1613L JAN2N1711 JAN2N1711S JANTX2N1613 JANTX2N1613L JANTX2N1711 JANTXV2N1613 JANTXV2N1613L 2N1890 JAN2N1890 JAN2N1890S JANTX2N1890 JANTX2N1890S 2N1893 JAN2N1893 JAN2N1893S JANTX2N1893 JANTX2N1893S 2N2219 2N2219A

2N5416 MOTOROLA

Abstract: BSW68A 2N4236 MOTOROLA MM3007 2N3501 MOTOROLA BSS74 MOTOROLA MM4003 2N3114 IR M-5005 2N3495
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.

2N2222A motorola

Abstract: 2N2484 motorola CV8616 2n2484 complementary 2N4033 2N3019 motorola transistor motorola 2n3053 2N2219 MOTOROLA BC107 2N3700 2N2219 transistor
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers These transisto rs are designed for dc to V H F a m p lifie r a p p lic a tio n s , g eneral-purpose sw itch in g a p plicatio n s, and co m ­ plem entary circuitry. Devices are listed in decreasin g order of V ( b r )C EO w ith in each p a c k a g e group.