2N3440 ST Search Results

2N3440

Abstract: 2N3439 P008B Transistor 2n3440
Contextual Info: 2N3439 2N3440 SILICON NPN TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications.

2N3440

Abstract: 2n3440 circuit diagram 2N3439 transistor 2n3439 2N3440 ST
Contextual Info: 2N3439 2N3440 SILICON NPN TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications.

2N3440

Abstract: 2N3439
Contextual Info: 2N3439 2N3440 SILICON NPN TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3439, 2N3440 are high voltage silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications.

2N3440

Abstract: 2N3439 2N3440L 2N3439L 2N3440 JAN
Contextual Info: TECHNICAL DATA 2N3439 JTX, JTXV 2N3439L JTX, JTXV 2N3440 JTX, JTXV 2N3440L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/368 NPN SILICON LOW-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N3439 2N3440 Units 350 450 250 300 Vdc Vdc Vdc Adc W W/0C

Contextual Info: 2N3439 2N3440 HIGH VOLTAGE NPN TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.89 max. (0.035)

2N3440

Abstract: 2N3439UA 2N3439 2N3439L 2N3440L 2N3439 JANS JAN 2N3439 UA
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS 2N3439 2N3439L 2N3439UA 2N3440 2N3440L

2N3440

Abstract: j350 TRANSISTOR 2N3439 transistor 2N 3440 J350 transistor 3440 2N 3440 3439 1010J
Contextual Info: 2N3439 2N3440 NPN SILICON TRANSISTORS TRIPLE DIFFUSED MESA. TRANSISTORS SILICIUM, NPN MESA TRIPLE •DIFFUSES. - High voltage, high frequency response transistor Transistor haute tension à fréquence d'amplification élevée - High voltage, low current, switching applications

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

2N5415

Contextual Info: N AUER PHILIPS/DISCRETE t. T E bbS3^31 0023138 OST 2N3439 2N3440 D IAPX SILICON NPN HIGH-VOLTAGE TRANSISTORS NPN high-voltage small-signal transistors in a TO-39 envelope and intended for use in telephony and professional communication equipment. Complementary type is 2N5415/5416.

2N3439

Abstract: 2N3440 300V regulator transistor 2n3439 2n3439 transistor
Contextual Info: 2N3439 2N3440 HIGH VOLTAGE NPN TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.89 max. (0.035)

Contextual Info: 2N3440 Product Preview Low Power Transistor NPN Silicon http://onsemi.com Features • MIL−PRF−19500/368 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military COLLECTOR 3 Temperature Range Screening

40412V1

Contextual Info: J.EIIE.U , line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3439; 2N3440; 2N4063; 2N4064; 40385; 40346, V1, V2; 40390; 40412, V1, V2 High-Voltage Silicon N-P-N Transistors MAXIMUM RATINGS, Absolute M,imum Vtluts:

BU808DFH

Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
Contextual Info: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416

2N3439

Abstract: 2N3440
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage &

2N3440 COMPLEMENTARY

Abstract: 2N3439 SB47 2N3440 2n3439 PHILIPS 2N5415
Contextual Info: 2N3439 2N3440 ^ PHILIPS INTERNATIONAL 5bE J> WÊ 7 1 1 0 0 2 b 0 0 M 2 b 4 b 0^7 * P H I N T -27- 2 SILICON NPN HIGH-VOLTAGE TRANSISTORS NPN high-voltage small-signal transistors in a TO-39 envelope and intended fo r use in telephony and professional comm unication equipment.

TRANSISTOR BDX 286

Abstract: 2N3439 transistor TIP 350 2n344o 1N914 2N3440 TEXAS 2N3439 2n3439 TEXAS INSTRUMENTS TIP 525
Contextual Info: TYPES 2N3439, 2N3440 N-P-N SILICON POWER TRANSISTORS H IGH-VO LTAGE POWER TRA N SISTO RS DESIGN ED FO R IN D U STRIA L AND M ILIT A R Y APPLICATIONS • Min V B R CEO ° f 350 V (2N3439) • Max VcE(sat) ° f 0-5 V at lc = 50 mA • Min f j of 15 MHz at 10 V , 20 mA

TEXAS 2N3439

Abstract: pf30n 2n3439 TEXAS INSTRUMENTS 2N3439
Contextual Info: TYPES 2N3439. 2N3440 N-P-N SILICON POWER TRANSISTORS HIGH-VOLTAGE POWER TRANSISTORS DESIGNED FOR INDUSTRIAL AND M ILIT A R Y APPLICATIONS CO H C < r *o r m m Vi • Min V BR CEO ° f 350 V (2N3439) • Max VcE(sat) of 0.5 V at lc = 50 mA 5i • Min f j of 15 MHz at 10 V , 20 mA

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

2N4007

Abstract: BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent
Contextual Info: SPRAGUE Metal-Encased Silicon S E P T R Transistors HIGH-VOLTAGE VIDEO OUTPUT TRANSISTOR >- Type No. os < Pd T* = 25 C s V BR Ic B O CEO V o lts EBO V o lts iiA lc Watts CBO V olts Max. (m A) 1.0 300 250 7 ' Lim ts Con dition s V <BR) NPN 2N3440 D-C C U R R E N T G A I N ( h FE)

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS 2N3439 2N3439L

t039 package transistor pin mount

Abstract: 2n3440 2n3440 equivalent
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN LOW POWER SILICON TRANSISTOR

2N3439

Abstract: 2N3439DCSM 2N3440 2N3440DCSM
Contextual Info: 2N3439DCSM 2N3440DCSM SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 3 1 4 A 6 5 0.23 rad. (0.009) • DUAL SILICON PLANAR EPITAXIAL NPN

2N2222A JANTX

Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con­ struction. 'c Device Type V(BR) CEO Volts Min mA

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 2 January 2014. MIL-PRF-19500/368M 2 October 2013 SUPERSEDING MIL-PRF-19500/368L 20 November 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER