2N2906 Search Results

2N2907A

Abstract: 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB

2N2906AUB JANTXV

Abstract: 2N2906AUB 2N2906AUBJ 2N2906AUBJS
Contextual Info: 2N2906AUB Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2906AUBJ • JANTX level (2N2906AUBJX)

Contextual Info: 2N2906A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2906AJ • JANTX level (2N2906AJX)

2N2906AUB JANTX

Contextual Info: 2N2906AUB Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2906AUBJ • JANTX level (2N2906AUBJX)

BCY72 MOTOROLA

Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200

tn-59

Abstract: 2222 NPN N 2222 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2906A 2N2907
Contextual Info: A/Ietal-Encased SPRAGUE Silicon SEPT T ran sistors HIGH-SPEED, MEDIUM CURRENT Type No. 2N2221 2N2221A 2N2222 2N2222A 2N2369 2N2906 2N2906A 2N2907 2N2907A 2N3115 2N3116 2N3135 2N3136 TN-54 TN-60 TN-62 TN-64 TQ-60 TQ-62 TQ-64 2N1469 2 N1469A 2N2218 2N2218A

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Linear Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

2N2906 JANTX

Abstract: 2N2906
Contextual Info: 2N2906 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.6A All Semelab hermetically sealed products

2N2906ACSM

Contextual Info: 2N2906ACSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: M aximum R atings Type No. E lectrical C haracteristics Ta=25"C, Unless O ttw w iM SpacHted hFE e Min Max 15 20 0.36 0.005 15 35 0.36 0.025 10 20 30 'ceo (V) Min CEO PD (V) Min (W) 0Tc=25°c 2N869 25 18 0.36 0.01 2N995 20 15 2N2696 25 25 2N2894 2N2906 2N2906A

Contextual Info: 3QE D • ^.3 7 .15 7=12^537 0031143 û WÊ SGS-THOMSON [»œiLegTrtHÎ «! 2N2904/2N2905 2N2906/2N2907 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904,2N2905,2N2906 and 2N2907 are sili­ con planar epitaxial PNP transistors in JedecTO-39

2N2907

Abstract: 2n2907a 2n2906 2N2906A 2N2907A PNP Transistor 2n2907 TRANSISTOR PNP transistor 2N2907
Contextual Info: 2N2906 2N2907 2N2906A 2N2907A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications.

TO-18 amps pnp transistor

Abstract: BC107 BC108
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029

MMBT3905

Abstract: MMBT2904 2N2906 to-92 2N1132A LM3661TL-1.40 2N2907 PNP Transistor to 92 2N3906 MPS3905 s2e transistor transistor 2N2905
Contextual Info: NATL SEMICOND DISCRETE SEE 3> • b501130 0037777 2 ■ T^27~0J PNP General Purpose Transistors by Ascending Vceo (continued) V Ceo(V) V cbo(V) Min Min BCF29 BCF30 BCW 61A 32 32 32 2N1132A 2N2904 2N2905 2N2906 2N2907 2N3905 2N3906 2N4037 2N4402 2N4403 2N5365

2N2906U

Contextual Info: SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage

Contextual Info: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A 1 6 2 5 3 4 A1 Low Leakage Current C FEATURES : ICEX=-50nA Max. , IBL=-50nA(Max.) D @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity.

*2N2920* LCC

Abstract: 2N2920* LCC 2N2222AUB 2N2907AUB 2N2906AUB
Contextual Info: SURFACE MOUNT CATALOGUE SURFACE MOUNT DEVICES CERAMIC LCC MIL-PRF-19500 QUALIFIED DEVICES SMALL SIGNAL - NPN * SMALL SIGNAL - PNP * 2N2221AUA 2N2222AUA 2N2221AUB 2N2222AUB 2N3700UB 2N2906AUB 2N2907AUB DUAL PACK TRANSISTORS* 2N2060U 2N4854U 2N5793U 2N5794U

2N2906DCSM

Contextual Info: 2N2906DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

2N2906ADCSM

Contextual Info: 2N2906ADCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

2N2906CSM

Contextual Info: 2N2906CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: at BIPOLAR < •■i MM* S M A L L S IG N A L T R A N S IS T O R S PACKAGE TO-18 P EA K i ■ 1 Ì { !; i *■ TO-39 DEVICE b v c eo «C hF| V CE sat TYPE VOLTS AM PS m in /m a x VOLTS 2N2906A" 60 600 40/120 0.4 150/15 2N2907A“ 60 600 10 0 / 3 0 0 0.4

"pnp switch"

Abstract: 2N2906 2N2907 MMCF2221 MMCF2222 MMCF2906 MMCF2906A MMCF2907 MMCF2907A transistor 2n2906
Contextual Info: MMCF2906, MMCF2906A SILICON MMCF2907, MMCF2907A FLIP-CHIP PNP SWITCH AND AMPLIFIER TRANSISTORS Flip'Chip — General purpose PNIP switching and am plifier transistor fam ily similar to the 2N2906,A and 2N2907,A devices. Primary Electrical Features: • DC C urre n t Gain specified fo r 0.1 to 300 m A dc

2N2906

Abstract: 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 2N2907 transistor 2n2907 2N2907 a TRANSISTOR transistor 2n2906 PNP 2N2907
Contextual Info: LUCAS LEDEX/ fil» D LUCAS 5b 07013 QODGin fi 1.8W PNPGENERAL PURPOSE SMALL SIGNAL TRANSISTORS 2N2906 2N2907 j These transistors are silicon planar epitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose

BV 20100

Abstract: 2N2369AU 2N2907AUB
Contextual Info: SURFACE MOUNT DEVICES PACKAGE PEAK LCC-28 VCE sa l DEVICE bvceo »C h FE TYPE VOLTS AMPS M IN/M AX SPP0404 SPP0405 SPP0407 SPP0410 SPP04I1 SPP0413 SPP0416 SPP0417 SPP0419 SPP0422 SPP0423 SPP0425 80 100 150 80 100 150 80 100 150 80 100 150 2.0 2.0 2.0 5.0