2N2222 TO-3 PACKAGE Search Results

2N2217

Abstract: KH 2222 ic TT 2222 ip 2222A 2N2218
Contextual Info: TYPES 2N2217 THRU 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L - S 7 3 1 1 9 1 6 , M A R C H 197 3 DESIGN ED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND G EN ER A L PURPOSE A M PLIFIER APPLICATIONS • hFE •• ■Guaranteed from 100 n A to 500 mA

2N2222

Abstract: 2n2222a 2N2222 npn small signal current gain Transistor 2N2222A 2N2222 pnp transistor 2N2222 2N2222 capacitance tr 2n2222 Datasheet 2N2222 transistor 2N2222 transistor
Contextual Info: NPN 2N2222 – 2N2222A PNP 2N2907 – 2N2907A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2222 and 2N2222A are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. The 2N2222 is also suitable for d.c. and v.h.f./u.h.f.

2N2907

Abstract: 2N2907A 2N2907 PNP Transistor 2N2907 NPN Transistor 2N2907 PNP 2N2222 data sheet transistor 2N2907 equivalent 2N2907A 2n2907 metal can 2n2907 transistor
Contextual Info: PNP 2N2907 – 2N2907A NPN 2N2222 – 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A .

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package Switching and Linear Application DC and VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N2221

Abstract: 2N2222 2N2221-2N2222 2N2222 tO 2N2222, CDIL 2N2222 application notes 2N22212
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package Switching and Linear Application DC and VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

15-V

Abstract: 2N2222 AEC-Q100 LM211 LM211QDRQ1 Q100 s parameters of 2N2222
Contextual Info: LM211ĆQ1 DIFFERENTIAL COMPARATOR WITH STROBES SLCS143 − APRIL 2004 D Qualification in Accordance With D PACKAGE TOP VIEW AEC-Q100† D Qualified for Automotive Applications D Customer-Specific Configuration Control D D D D D EMIT OUT IN+ IN− VCC−

Contextual Info: LM211ĆQ1 DIFFERENTIAL COMPARATOR WITH STROBES SLCS143 − APRIL 2004 D Qualification in Accordance With D PACKAGE TOP VIEW AEC-Q100† D Qualified for Automotive Applications D Customer-Specific Configuration Control D D D D D EMIT OUT IN+ IN− VCC−

Contextual Info: LM211ĆQ1 DIFFERENTIAL COMPARATOR WITH STROBES SLCS143 − APRIL 2004 D Qualification in Accordance With D PACKAGE TOP VIEW AEC-Q100† D Qualified for Automotive Applications D Customer-Specific Configuration Control D D D D D EMIT OUT IN+ IN− VCC−

2N2477

Abstract: 2N2222 2N2219 transistor 2N2938 2N2221 2N2483 FF2221E FF2221J FF2222E FF2222J
Contextual Info: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium

2N2222A TO-92

Abstract: 2N2222A plastic 2N2222A plastic package 2n2222 st 2n2222a 2N2222A ST 2n2222 datasheet ST 2n2222 Transistor 2N2222A 2N2222A st
Contextual Info: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended.

2n2222

Abstract: pin configuration transistor 2N2222 Transistor 2N2222 NPN TO92 2N2222 hfe 2N2222 NPN Transistor to 92 OF transistor 2N2222 "PNP Transistor" 2n2222 OF transistor 2N2222 to-92 Datasheet 2N2222 transistor 2N2222 transistor
Contextual Info: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended.

2N2222

Abstract: 2N2904 2N2218 2N2219 transistor 2N2475 2N2219 2N2220 2N2221 2N2905 2N2906
Contextual Info: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*

Contextual Info: QUAD TRANSISTOR ARRAYS Series T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most

2n2222

Abstract: 2N2222A plastic package 2N2222A plastic 2N2222 hfe 2n2907 to92 2N2222A TO-92 OF transistor 2N2222 to-92 2n2222 to92 2N2222 NPN Transistor to 92 "PNP Transistor" 2n2222
Contextual Info: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended.

2n2222

Abstract: 2N2222 NPN Transistor features transistor 2N2222 PHILIPS 2N2222A 0612 2N2222 circuit 2n2222 iv C2N2222A for transistor 2N2222 ST 2n2222 transistor 2N2222
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29 Philips Semiconductors Product specification NPN switching transistors

typical 2n2222 npn transistors

Abstract: 2N2475 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E FF2222J FF2483E
Contextual Info: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium

2N2222A plastic package

Abstract: 2N2222A plastic 2n2222 st 2n2222a 2N2222A ST 2n2222 NPN transistor 2n2222A plastic package 2n2222 to92 OF transistor 2N2222 OF transistor 2N2222 to-92
Contextual Info: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended.

2N2222A plastic package

Abstract: TPQ2907A transistor 2n2222A plastic package NPN transistor 2n2222A plastic package 2n2222a plastic tpq3904
Contextual Info: QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most

2N2220

Abstract: 2N2219 transistor 2N2475 2N2218 2N2219 2N2221 2N2222 2N2904 2N2905 2N2906
Contextual Info: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at V hFE at Switching Times (Max) at fjM in at Package lc Ib Min. Max. !c !c mA MHz mA mA mA 25* 175* 150 TO-39 2N2904 25* 200* 150 TO-39 2N2905 20 20* 213* 150 TO-18 150 250 20 25* 175* 150 TO-18

2N2477

Abstract: 2N2219 transistor 2N2475 ZT184 2N2218 2N2219 2N2220 2N2221 2N2222 2N2904
Contextual Info: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*

2N2368

Abstract: 2N2475 2n2369 2N2476 2N2220 N2904 2N2218 2N2219 2N2221 2N2222
Contextual Info: NPN SW ITCHING - continued Type Max VcEO lc V mA Max VcE sat at V hFE >C mA >B mA Min at Max 'c mA Switching Times (Max) at f j Min at lc MHz mA toff ns ton ns lc Package Comple­ ment mA 30 1000 0 -35 150 15 40 150 50 50 55* 360* 150 TO-39 2N2218 30 800 0 -4

2N2222 chip

Abstract: HP-5082-4204 2n2222 h parameter values HP5082-4204 Endevco 2215 LT318A
Contextual Info: LT1022 High Speed, Precision JFET Input Operational Amplifier FEATURES • ■ ■ ■ ■ U ■ DESCRIPTIO Guaranteed Slew Rate: 23V/µs Min Guaranteed Offset Voltage: 250µV Max – 55°C to 125°C: 750µV Max Guaranteed Drift: 5µV/°C Max Guaranteed Bias Current:

2N3440 MOTOROLA

Abstract: CV8616 2N2222A motorola 2N2905 MOTOROLA BC107-108-109 2n3439 motorola 2N3501 MOTOROLA 2N2222A JANTX bc107108109 motorola transistor 2N2907A
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued Choppers Devices are listed in decreasing V (b r )E B O - Offset Voltage Package TO-46 Device 2N2946 2N2946A 2N5230 2N5231 2N2945A 2N2945 2N5229 V(BR)EBO Min 40 40 30 30 25 25 15 V(BR)ECO 35 35 20 20 20 20 10 Min

N706A

Abstract: 2N2368 2N2475 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
Contextual Info: NPN GENERAL PURPOSE - Continued Type 2 N3053 Max Vc b V c e O ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at Pto t at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696