2N222 TRANSISTOR Search Results

2N222

Contextual Info: 2N222 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)12 I(C) Max. (A) Absolute Max. Power Diss. (W)70m Maximum Operating Temp (øC)100’ I(CBO) Max. (A)15uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

ULN 2303

Abstract: 2n222 itt 2n2222 4431b 2N2272A itt 2N2222A 2M222 2N222J 2N2222A itt UFLN
Contextual Info: s e m ic o n d u c t o r t e c h n ic a l d a ta 2N2221JAN, JTX, JTXV 2N2221AJAN, JTX, JTXV 2N2222JAN, JTX, JTXV 2N2222AJAN, JTX, JTXV, JANS CRYSTAL OfJCS 2805 Veterans Highway Suit 14 processed per MIL-S-19500/255 NPN Silicon Small-Signal Transistors RonkorKoma N Y. 1177C

2N2222

Abstract: 2n2222a 2N2221 2N222 st 2n2222a 2N2221A 2N2221-2N2222 2N2222 capacitance 2N2222 base capacitance ST 2n2222
Contextual Info: SEMICONDUCTOR I te c h n ic a l d a ta 2N2222. 2N2222A CRY ST AlONCS 2805 Veterans Highway Suite 14 Ronkorkoma. N.Y. 1177t, NPN Silicon Small-Signal Transistors .designed for general-purpose switching and amplifier applications. M A X IM U M R A T IN G S Symbol

MJE5742 equivalent

Abstract: 2n222 TRANSISTOR MJE5742 MJE20 mje5740 2N2905 transistor 1N493
Contextual Info: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:

2n222 TRANSISTOR

Abstract: transistor 2n222 of diode 2n222 1N493 mje5742g mje20 2n2905 time delay relay high voltage fast switching transistor for ignition coil drivers application Ferroxcube core 2N2905 transistor
Contextual Info: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*

2n222 TRANSISTOR

Abstract: ignition coil npn power darlington MJE5742 transistor 2n222 2n222 1N493 MJE5740 MJE5740G MJE5742G MR826
Contextual Info: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*

2n222 TRANSISTOR

Abstract: 1N493 2N222 MJE5740 MJE5740G MJE5742 MJE5742G MR826
Contextual Info: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*

MJE5740

Abstract: transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MJE5742 MR826 OF 2n222
Contextual Info: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:

MJE5742

Abstract: 1N493 2N222 2N2905 MJE5740 MR826 Darlington transistor 2N2905 MJE5742 equivalent
Contextual Info: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*

Contextual Info: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*

B5742G

Abstract: high voltage fast switching transistor for ignition coil drivers application of diode 2n222 2n222 TRANSISTOR
Contextual Info: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS

2N2222L

Abstract: 2n222 TRANSISTOR MJE5742 MR826 1N493 2N222 MJE5740 MJE5740G MJE5742G
Contextual Info: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*

transistor 2n222

Abstract: MJE5742G MJE5740 1N493 2N222 MJE5740G MJE5742 MR826 of diode 2n222 1K68
Contextual Info: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*

2n222 TRANSISTOR

Abstract: Ferroxcube core MR826 equivalent 1N493 transistor 2n222
Contextual Info: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS

Contextual Info: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS

mje13003 equivalent

Abstract: MJE-13003 equivalent mje13003 mje13003 MJE13003 on
Contextual Info: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,

equivalent mje13005

Contextual Info: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications

2n222 TRANSISTOR

Abstract: transistor 2n222 2n222 1N493 2N2905 MJE5740 MJE5742 MR826 of diode 2n222 MJE20
Contextual Info: ON Semiconductort MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:

2n222 TRANSISTOR

Abstract: MJE13005G equivalent mje13005 transistors mje13005 transistor 2n222 circuit based on MJE13005 1N493 AMP24 1N5820 2N222
Contextual Info: MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,

equivalent mje13005

Abstract: transistor 2N222 mje13005-5 2n222 TRANSISTOR 1N493 1N4933 2N222 2N2905 MJE13005 MJE13005G
Contextual Info: MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications

transistor 13003G

Abstract: mje13003 equivalent 13003G MJE13003 transistor+13003G
Contextual Info: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,

pin diagram mje13003

Abstract: mje13003 equivalent equivalent mje13003 transistor 2N222 2n222 TRANSISTOR 1N4933 1N5820 2N222 2N2905 MJE13003
Contextual Info: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,

equivalent mje13005

Abstract: transistor mje13005 application notes MJE13005 2n222 TRANSISTOR mje13005 application notes 1N493 MJE13005 on semiconductor 1N5820 2N222 MJE13005
Contextual Info: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications

Contextual Info: MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,