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    Rochester Electronics LLC MTB52N06VL

    N-CHANNEL POWER MOSFET
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    DigiKey MTB52N06VL Bulk 626
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    onsemi MTP52N06VLG

    MOSFET PWR N-CH 60V 52A TO-220AB
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    Vyrian MTP52N06VLG 1,093
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    Bivar Inc L22-TG2N06V

    LED MOD CL WH STARBOARD 5000K
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    DigiKey L22-TG2N06V Tray 100
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    onsemi MTB52N06VL

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    Bristol Electronics MTB52N06VL 1,114
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    Rochester Electronics MTB52N06VL 946 1
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    onsemi MTP52N06V

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    Bristol Electronics MTP52N06V 226
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    2N06V Datasheets Context Search

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    2n06v

    Contextual Info: MOTOROLA Order this document by 2N06V/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOSV S O -8 for S urface Mount N-Channel Enhancement-Mode Silicon Gate DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS RDS on = 0.115 OHM TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This


    OCR Scan     		MMDF2N06V/D MMDF2N06VD 2n06v PDF

    2n06v

    Abstract: motorola mosfet 751 MMDF2N06V2 TMOS E-FET MMDF2N06V MMDF2N06V1
    Contextual Info: MOTOROLA Order this document by 2N06V/D SEMICONDUCTOR TECHNICAL DATA Product Preview 2N06V TMOS V SO-8 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This


    Original     		MMDF2N06V/D MMDF2N06V MMDF2N06V/D* TransistorMMDF2N06V/D 2n06v motorola mosfet 751 MMDF2N06V2 TMOS E-FET MMDF2N06V MMDF2N06V1 PDF