2N 690 Search Results

TR1210

Abstract: BTW 600 2N688 2N1849 BTW 67 1850-A
Contextual Info: 71C D I S G S-THOMSON 7 c!H,:ìa 3 7 GGGMTMG *i | r-ZS~ ~ /y THOR3SOM SEMICONDUCTORS metal case thyristors < 100 Arms ^amb •o Typei Vrrm • t sm 10 ms V DRM A 16 Arms / Tcase 2N 1843 A 2N 1844 A 2N 1846 A 2N 1848 A 2N 1849 A 2N 1850 A TR 6010 TR 7010

2N 690 SCR

Abstract: 136 2n SCR 2N MS210A
Contextual Info: / T 7 SGS-THOMSON 2N 682 — > 2N 692 SCR FEATURES • HIGH SURGE CAPABILITY ■ HIGH ON-STATE CURRENT ■ HIGH STABILITY AND RELIABILITY DESCRIPTION The 2N 682 —> 2N 692 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology.

2N 690 SCR

Abstract: 2N692
Contextual Info: SGS-THOMSON C RfilD g [llL[i©¥^(Q KgQ©i 2N 682 — > 2N 692 SCR FEATURES • HIGH SURGE CAPABILITY ■ HIGH ON-STATE CURRENT ■ HIGH STABILITY AND RELIABILITY DESCRIPTION The 2N 682 —> 2N 692 Family of Silicon Controlled Rectifiers uses a high performance glass passivated

btw 600

Abstract: 481200 BTW 66 BTW67-1000N BTW 67 BTW48-200 10MSA BTW50-100 2N681 2N685
Contextual Info: thyristors < 80 Arms thyristors < 80 Aeff THOMSON-CSF Tamb = 25 °C Types •o Vr r m ■t s m 10 ms ■r m @ v r r m ■d m @ V q r m Tj max Vg t •g t A max (mA) max (V) max (mA) 1 40 V DRM (A) (V) 25 Arms / Tcase = 65°C 2N681 2N 682 2N 683 2N 685 2N 6 8 7

Contextual Info: SURFACE MOUNT WIREWOUND CHIP INDUCTOR Dimensions in inches mm Inductance Tolerance Coded Dash Numbers B ±0.15nH S ±0.30nH G ±2% J ±5% K ±10% M ±20% How to order code Packaging 555-0402 555-0603/0805 555-1008 Basic Part No. -1N-0 -2N-0 -2N-2 -2N-7 -3N-3

SST5484

Contextual Info: 2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number -0 .3 to - 3 -2 5 3 loss Min mA 1 2N/SST5485 -0 .5 to - 4 -2 5 3.5 4 2N/SST5486 -2 1 0 -6 -2 5 4 8 V G S (off) (V) V (B R )G S S Min (V)

SCR 2N 689

Abstract: 2n 690
Contextual Info: In te rn a tio n a l IC2R Rectifier Phase Control SCR VM M / Part VDRM Number Fax on Cose Demand Outline Number Key 'iSM 1RMS V (A) 2N 685 200 16 2N 686 250 16 2N 687 300 16 *T(AV) @ Tc VGT 1GT ' f a dv/dt RQK(DC) (<») (b) (°C) (A) (A) 25 65 145 150 2

FX2N-128MR

Abstract: FX2N-48MT Mitsubishi MELSEC FX2N-80MR FX2N 64mr manual FX2N-64MT Mitsubishi MELSEC FX2N-80MR-DS beijer make sc09 programming cable Melsec mitsubishi rs232 sc09 programming cable FX2N-16MR
Contextual Info: MITSUBISHI ELECTRIC Programmable Logic Controllers 40 90 X IN 0 1 2 3 4 5 6 7 L COM X0 X2 X4 X6 X10 X12 X14 X16 24+ X1 X3 X5 X7 X11 X13 X15 X17 N POWER 0 1 2 3 4 5 6 7 IN 10 11 12 13 14 15 16 17 MELSEC FX0S, FX0N, FX2N POWER RUN BATT.V FX 2N-16EX OUT FX 2N-32MR

TX2N1724

Abstract: 2N1724 2N1722 ADE350
Contextual Info: M IL -S -1 9 5 0 0 /2 6 2 F 19 February 196? SUPERSEDING M IL -S -1 9 5 0 0 /2 6 2 E 25 O ctober 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, N PN , SILICON, HIGH-POWER T Y PE S 2N 1722, TX2N 1722, 2N 1724, AND TX2N 1724 T h is sp e c ific a tio n i s m andatory fo r u s e by a ll D ep a r t­

c45 scr

Abstract: scr C50 C46U C46C C46M TRANSISTOR D1651 2N1909 C147 C147U C350
Contextual Info: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 2N 1909-16 2 N 1792-98 JEOEC C 60, 62 C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00

NMOS2

Abstract: transistor marking code N1G NMOS-2 2N AND 2P-CHANNEL ENHANCEMENT DEVICE MARKING p1g AF9902M Anachip f 1 p2s P1D mosfet LCD Monitor Inverter
Contextual Info: AF9902M 2N and 2P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer

2N6903

Contextual Info: • 43D 22 71 DDS 4 70 0 Ì34 ■ HAS 2N 6903 03 HARRIS January 1994 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET Package Features T0-205AF BOTTOM VIEW • 0.98A, 200V • rDS(on) = 3 .6 5 n GATE SOURCE • Design Optimized for 5V Gate Drive

2N AND 2P-CHANNEL ENHANCEMENT

Contextual Info: AP9932GM Pb Free Plating Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G LCD Monitor Inverter

Contextual Info: AP9932GM Pb Free Plating Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET  Simple Drive Requirement  Low On-resistance  Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G LCD Monitor Inverter N1D/P1D

2N681

Abstract: LT 5226 2N5204 2n6812 3081A 2n6819 transistor BF 257 LT 5206 2N5204 Series 2N683
Contextual Info: Data Sheet No. PD-3.081A INTERNATIONAL RECTIFIER I“R 2NS81 & SN5S04 SERIES 25 and 35 Amp RMS SCRs D escription/Features Major Ratings and Characteristics 2N 6 B 1 -9 2 2 N 5 2 0 4 -0 7 ' t r m s 25 35 lT (A V ) 16 * 22* - 6 5 to 6 5 * @ TC - 4 0 to 4 0

2N389

Abstract: HJ39 l73a 2N424 transistor T K 2056 on 341 j340 transistor abe 444
Contextual Info: KTL-S-19500A73A i M llw - MIL-S-19500/173 KAVY 7 April 1961 MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON TYPES 2N389 AND 2N«4 t m . im«n4fleatlon 1b mandatory far use tor all Departments and Agendas of tho Department of Dafenae. 1. SCOPE 1.1 Seopo- This specification coven the detail requirement« for hi#t power, silicon, KPN, tran­

2N3553

Abstract: 2N3375 2N3632 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor
Contextual Info: b'îE D • bbS3T31 □DE‘ï7bb 3Tb BiAPX 2N3375 2N3553 2N3632 A SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in T 0 -6 0 metal envelopes with the electrodes

2n3375

Abstract: 2n3375 transistor 2N3553
Contextual Info: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes

Contextual Info: D nO .2n 0n +0.03 -0.08 nDI A. TH15 DRAWING AND DESIGN HEREON CON­ S TITU TE S A PROPRIETARY DESIGN OF PACKARD E LEC TR IC D IV IS IO N AND IS N O T TO BE DUPLICATED OR R EPR O D U C ED W ITH­ OUT AUTHORITY OF PACKARD E' ECTRIC D IV IS IO N . _

RCA scr package N TO-8

Abstract: rca 2N4102 IGNITION WITH SCR rca scr SCR 100A scr 2n6396 S20620 2n3528 2N4102 ignition tci
Contextual Info: SC R Product Matrix TO-i TO-66 TO 66 With Heat Rad. ¡'3SSSL. Jw a ip | f RC A SCR's 'T RM S • t SM (60 Hz) v DROM v RROM N D 2A 60A 15 25 30 50 100 150 200 250 300 400 500 600 700 750 800 4.5A 200A 5A 60A F ro * 5A 80A FTO ' 5A 80A S2400A S2400B 2N 3228

D 5038 Transistor Horizontal

Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Contextual Info: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching

LT 5226

Abstract: N2S10 2N681 2N5204 2N682 2N683 2N685 2N688 2N689 2N690
Contextual Info: Data Sheet No. PD-3.081A IN T E R N A T IO N A L R E C T IF IE R I“R 2NS81 & SN5S04 SERIES 25 and 35 Amp RMS SCRs D escription/Features Major Ratings and Characteristics 2N 6 B 1 -9 2 2 N 5 2 0 4 -0 7 't r m s 25 35 lT ( A V ) 16* 22* - 6 5 to 6 5 * @ TC

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle