2N 60 APPLICATION NOTES Search Results

2N2147

Abstract: 2N2160 2N1756 2N2217 2N1305 2N1307 2N1308 Application of 2n1304 PNP 2N2923 2N1303
Contextual Info: 57 T ransistors Continued Notes 1> M inim um value {2 Average value (3> Max. unilateralized power gain (4) Max. frequency o f oscillation {5) W ith heat sink Pto t: Max. total dissipation in free air a t 25°C ambient temp. Vcbo: Max. collector-to-base voltage, em itter

2N2147

Abstract: fet 2n2646 2n2926 2n3055 tos 2N1305 npn 2N2926 2N1304 2n1304 transistor 2N1309 2N1308
Contextual Info: 57 T ransistors Continued Notes 1> M inim um value {2 Average value (3> Max. unilateralized power gain (4) Max. frequency o f oscillation {5) W ith heat sink Pto t: Max. total dissipation in free air a t 25°C ambient temp. Vcbo: Max. collector-to-base voltage, em itter

TLP 527

Abstract: tlp527 2N 60 Application notes TIP527 TIP528 2N4998 2N5685 TIP640
Contextual Info: TYPES TIP527, TIP528 P-N-P SILICON POWER TRANSISTORS FOR P O W ER -A M PLIFIE R A N D H IG H -SPEED -SW ITC H IN G A P PLIC A TIO N S r mechanical data • 20 0 V Min V B R C E O • 8-A Rated Continuous Collector Current • 60 Watts at 100°C Case Temperature

2N6884

Abstract: 2N5683 2N5684 c358c 2N5685 2N4998 TIP640
Contextual Info: TYPES 2NS683, 2N5684 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR P O W ER -A M PLIFIER A N D H IG H-SPEED-SW ITCHING A P PLIC A TIO N S DESIG N E D FOR C O M P LE M E N TA R Y USE W ITH 2N 5685, 2IM5686 V • 300 Watts at 25°C Case Temperature | •

TLP647

Abstract: TIP 642 transistor transistor 2N 3792 BV 642 TIP640 TIP641 TIP642 TIP645 TIP646 TIP647
Contextual Info: TYPES TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED IFOR COMPLEMENTARY USE WITH TIP640, TIP641, TIP642 175 W at 25°C Case Temperature • Min h f e of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100 mJ Reverse Energy Rating

2n 3681

Contextual Info: 12 11 10 7 8 DIM 4 NOTES: 1 M ATERIALS: HOUSING - LIQUID CR YS TA L POLYMER. U L 94 V - 0 W AFER DIELECTRIC - LIQUID C R YS TA L POLYMER. U L 94 V - 0 CONTACT - COPPER ALLOY 2) FINISHES CONTACT INTERFA CE 0 .7 6 MICROMETER MINIMUM SE LEC T GOLD OVER 1.27 MICROMETER MINIMUM NICKEL O VERALL

BD633

Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
Contextual Info: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.

TIP 642 transistor

Abstract: transistor 2N 3792 2N5333 4998 transistor 2N4300 APPLICATION MIN 5758 2N DIODE TIP 75 transistor
Contextual Info: TYPE 2N5333 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4300 15 W at 100°C Case Temperature Max V E|„, of 0.45 V at 1 A Typ ton of 150 ns at 1 A l c lc

2N6331

Abstract: 2N6330 2N6326 2N6327 2N6328 2N6329 2n6328 texas instruments transistor 2N 3792 PC15A LW 2411
Contextual Info: T Y P E S 2 N 6 3 2 9 , 2N6330, 2N6331 P - N - P S I N G L E - D I F F U S E D M E S A S IL IC O N P O W E R T R A N S I S T O R S FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25°C Case Temperature

B0738

Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
Contextual Info: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m

Contextual Info: MOTOROLA Order this document by 2N4398/D SEMICONDUCTOR TECHNICAL DATA 2N4347 See 2N3442 PNP Silicon H igh-Pow er Transistors 2N 4398 2N 4399 2N 5745 . . . designed for use in power amplifier and switching circuits. • • • Low C ollector-Em itter Saturation Voltage —

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

IC-3180

Abstract: Nec 78F0034 IC-8635 sp 8635 IC-8636 ic u11 78F0058 IC-8884 IC-8632 78f0034
Contextual Info: 78K/0 SERIES 8-BIT SINGLE-CHIP MICROCONTROLLERS INSTRUCTIONS FOR ALL 78K/0 SERIES 1995 Document No. U12326EJ3V0UM00 3rd edition (O. D. No. IEU-849) Date Published June 1997 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Nec 78F0034

Abstract: IC-8884 78058F PD78002Y uPD78014Y uPD78018FY uPD78054Y uPD78058FY U11993E uPD78075BY
Contextual Info: 78K/0 SERIES 8-BIT SINGLE-CHIP MICROCONTROLLERS INSTRUCTIONS FOR ALL 78K/0 SERIES 1995 Document No. U12326EJ3V0UM00 3rd edition (O. D. No. IEU-849) Date Published June 1997 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Contextual Info: MOTOROLA Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N 3906* PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V oltag e VCEO 40 V dc C o lle c to r-B a s e V oltag e

TIP42C EQUIVALENT

Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
Contextual Info: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C

6075A

Abstract: 2n607 2N6073A 2N6075A 6073a 2N thyristor 2N6071
Contextual Info: MOTOROLA Order this document by 2N6071/D SEMICONDUCTOR TECHNICAL DATA 2N 6071A ,B * 2N 6073A .B * 2N 6075A .B * Sensitive Gate Triacs Silicon Bidirectional Thyristors "Motorola preferred devices . . . designed primarily for full-wave ac control applications, such as light dimmers,

motorola 2N5877

Abstract: 2N5877 2N5875 2N5876
Contextual Info: MOTOROLA S E M IC O N D U C T O R Order this document T E C H N IC A L D A T A bv 2 N 5 8 7 7 /d NPN 2 N 58 77 2 N 5 8 78 Com plem entary Silicon H igh-Pow er Transistors . . . designed for general-purpose power amplifier and switching applications. • •

tlp641

Abstract: IIP64 transistor 2N 3792 T1P640 TIP640 TIP641 TIP642 TIP645 TIP646 TIP647
Contextual Info: TYPES TIP640, TIP641, TIP642 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FOR C O M P L E M E N T A R Y U SE W ITH TIP645, TIP646, TIP647 175 W at 2Ei°C Case Temperature • Min hpE of 1000 at 4 V, 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating

2n 5550

Abstract: 2N5551 diodes inc 2n5551
Contextual Info: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N 5551* NPN Silicon COLLECTOR 3 MAXIMUM RATINGS Symbol 2N5550 2N5551 Unit C o lle c to r-E m itte r Voltage Rating VCEO 140 160 Vdc C o lle c to r-B a s e Voltage

2n5302

Abstract: 2n5301 2n5303 200WATT TRANSISTOR 2n5302
Contextual Info: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N 5301 2N 5302 2N 5303 H igh-P ow er NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON

Tip 26C transistor

Abstract: tip 26c T1P142 tip140 texas instruments TIP142 Application Note TIP14Z 1N014 tlp142 circuit 2N 3055 transistor tip 3055
Contextual Info: TYPES TIP140, TIP141, TIP142 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED FOR COM PLEM ENTARY USE WITH TIP145, TIP146, TIP147 125 W at 25°C Case Temperature • Min hpE of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating

Contextual Info: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N 5301 2N 5302 2N 5303 H igh-P ow er NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON

TIP 41 transistor

Abstract: tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147
Contextual Info: T Y P E S TIP 36, TIP36A, TIP36B, TIP36C P-N-P SINGLE-DIFFUSED M ESA SILICO N POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 3 5 , T IP 3 5 A , T IP 3 5 B , T IP 3 5 C