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    2MJ 3.0 Price and Stock

    United Chemi-Con Inc

    United Chemi-Con Inc EKYB250ELL152MJ30S

    Cap Aluminum Lytic 1500uF 25V 20% (10 X 30mm) Radial 5mm 2230mA 10000h 105A°C Bulk
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    Master Electronics EKYB250ELL152MJ30S 4,000
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    United Chemi-Con Inc EKY-100ELL222MJ30S

    Cap Aluminum Lytic 2200uF 10V 20% (10 X 30mm) Radial 5mm 1910mA 6000h 105A°C Bulk
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    United Chemi-Con Inc ELXZ250ELL102MJ30S

    Cap Aluminum Lytic 1000uF 25V 20% (10 X 30mm) Radial 5mm 1690mA 5000h 105A°C Automotive Bulk
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    Master Electronics ELXZ250ELL102MJ30S 1,192
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    United Chemi-Con Inc ELXZ160ELL152MJ30S

    Cap Aluminum Lytic 1500uF 16V 20% (10 X 30mm) Radial 5mm 1690mA 5000h 105A°C Automotive Bulk
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    United Chemi-Con Inc ELXZ6R3ELL272MJ30S

    Cap Aluminum Lytic 2700uF 6.3V 20% (10 X 30mm) Radial 5mm 1690mA 5000h 105A°C Automotive Bulk
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    Master Electronics ELXZ6R3ELL272MJ30S
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    2MJ 3.0 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K15N120

    Abstract: PG-TO-247-3 SKW15N120 K15N OF IGBT 1000A 1000V
    Contextual Info: SKW15N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


    Original     		skw15n120pg-to-247-3k15n120k15n+1of igbt 1000a 1000v PDF

    Contextual Info: Preliminary SKW25N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 50% lower Eoff compared to previous generation • Short circuit withstand time – 5 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


    Original     		skw25n120o-247acq67040-s4282sep-99 PDF

    SGP15N120

    Abstract: Q67040-S4276 Q67040-S4274 Q67040-S4275 SGB15N120 SGW15N120
    Contextual Info: SGW15N120 Preliminary SGP15N120, SGB15N120 Fast S-IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


    Original     		sgw15n120sgp15n120sgb15n120o-220ab+5q67040-s4274o-263abq67040-s4275o-247acq67040-s4276 PDF

    G15N120

    Contextual Info: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


    Original     		sgp15n120sgw15n120pg-to-220-3-1o-220ab+3pg-to-247-3-1o-247acg15n120 PDF

    ir igbt 1200V 40A

    Abstract: G15N120
    Contextual Info: SGB15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original     		sgb15n120ir igbt 1200v 40ag15n120 PDF

    IGBT 1000V 100A

    Contextual Info: SGW15N120 SGP15N120, SGB15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


    Original     		sgw15n120sgp15n120sgb15n120o-220ab+4o-263abo-247acq67040-s4274igbt 1000v 100a PDF

    H20R120

    Abstract: igbt h20r120 h20r H20R12 h20r120 igbt IHW20N120R ALL h20r120 marking h20r120 Reverse Conducting IGBT with monolithic body diode igbt 1200V 60A
    Contextual Info: IHW20N120R Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications


    Original     		ihw20n120rh20r120igbt h20r120h20r+6h20r12h20r120 igbtall h20r120marking h20r120reverse conducting igbt with monolithic body diodeigbt 1200v 60a PDF

    ic60a

    Contextual Info: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


    Original     		sgp15n120sgw15n120pg-to-220-3-1o-220ab+3pg-to-247-3-1o-247acic60a PDF

    h20r120

    Abstract: h20r120 igbt ALL h20r120 IHW20N120R igbt h20r120 m 1305 PG-TO-247-3-21 JESD-022 H20R12 H20R
    Contextual Info: IHW20N120R Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :


    Original     		ihw20n120rpg-to-247-3-21h20r120h20r120 igbt+6all h20r120igbt h20r120m 1305jesd-022h20r12h20r PDF

    G15N120

    Contextual Info: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


    Original     		sgp15n120sgw15n120pg-to-220-3-1o-220ab+3pg-to-247-3-1o-247acg15n120 PDF

    igbt 20A 1200v

    Contextual Info: SGB15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original     		sgb15n120igbt 20a 1200v PDF

    SGP15N120

    Abstract: Q67040-S4274 Q67040-S4275 Q67040-S4276 SGB15N120 SGW15N120
    Contextual Info: SGP15N120 SGB15N120 SGW15N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


    Original     		sgp15n120sgb15n120sgw15n120p-to-220-3-1+8o-220abp-to-263-3-2p-to-247-3-1o-263abo-247acq67040-s4274q67040-s4275q67040-s4276 PDF

    H20R120

    Abstract: Reverse Conducting IGBT with monolithic body diode h20r120 igbt
    Contextual Info: IHW20N120R Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :


    Original     		ihw20n120rh20r120reverse conducting igbt with monolithic body diodeh20r120 igbt PDF

    fast recovery diode 1200V 100ns

    Abstract: Q67040-S4281 SKW15N120
    Contextual Info: Preliminary SKW15N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


    Original     		skw15n120o-247acq67040-s4281mar-00+1fast recovery diode 1200v 100ns PDF

    K15N120

    Contextual Info: SKW15N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


    Original     		skw15n120k15n120 PDF

    k15n12

    Abstract: infineon igbt 1200v 600A K15N120 IR diode 100A 800V
    Contextual Info: SKW15N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


    Original     		skw15n120k15n12infineon igbt 1200v 600ak15n120+1ir diode 100a 800v PDF

    SKW15N120

    Abstract: infineon igbt 1200v 600A Q67040-S4281
    Contextual Info: SKW15N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


    Original     		skw15n12040lowerp-to-247-3-1o-247ac+3q67040-s4281jul-02infineon igbt 1200v 600a PDF

    K15N120

    Contextual Info: SKW15N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • Lower Eoff compared to previous generation  Short circuit withstand time – 10 s  Designed for: - Motor controls - Inverter - SMPS  NPT-Technology offers:


    Original     		skw15n120pg-to-247-3k15n120 PDF

    K15N120

    Contextual Info: SKW15N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


    Original     		skw15n120k15n120 PDF

    Contextual Info: SKW15N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


    Original     		skw15n120o-247acq67040-s4281jan-02 PDF

    g25t120

    Abstract: bup314 equivalent BUP314 IGW25T120 200nC
    Contextual Info: IGW25T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP314 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original     		igw25t120bup314g25t120bup314 equivalent+1200nc PDF

    G50N60HS

    Abstract: G50N60 G50N60*HS SGW50N60HS IDP45E60 PG-TO-247-3 207E-04 SGW50N60HS equivalent
    Contextual Info: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		sgw50n60hspg-to-247-3eoff25g50n60hs+5g50n60g50n60*hsidp45e60207e-04sgw50n60hs equivalent PDF

    g50n60hs

    Abstract: G50N60 G50N60*HS SGW50N60HS g50n60h SGW50N60HS equivalent G50N60hs IGBT 207E-04 SGW50N60 PG-TO247-3
    Contextual Info: o SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		sgw50n60hseoff25pg-to-247-3-1100substances+9g50n60hsg50n60g50n60*hsg50n60hsgw50n60hs equivalentg50n60hs igbt207e-04sgw50n60pg-to247-3 PDF

    G50N60

    Abstract: g50n60hs G50N60*HS SGW50N60HS g50n60h IDP45E60 PG-TO-247-3 SGW50N60HS equivalent SGW50N60
    Contextual Info: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		sgw50n60hspg-to-247-3eoff25g50n60hs+6g50n60g50n60*hsg50n60hidp45e60sgw50n60hs equivalentsgw50n60 PDF