2GM J Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR PNP SOT–23 FEATURES  General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: MMBTA55 THRU MMBTA56 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM

MMBTA55

Abstract: MMBTA56
Contextual Info: MMBTA55 MMBTA56 Driver PNP 3 1 2 SOT-23 V CEO MMBTA55 -60 -60 -4.0 -5 MMBTA56 -80 -80 -4.0 MMBTA55=2H, MMBTA56=2GM - 3 MMBTA55 MMBTA56 -60 -80 - MMBTA55 MMBTA56 -60 -80 - -4.0 I B =0) -6 -8 S MMBTA55 MMBTA56 _ 300us, Duty Cycle < _ 2.0% 3.Pulse Test:Pulse Width <

Contextual Info: MMBTA55 MMBTA56 Driver PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO MMBTA55 -60 -60 -4.0 -5 MMBTA56 -80 -80 -4.0 MMBTA55=2H, MMBTA56=2GM - (3) MMBTA55 MMBTA56 -60 -80 - MMBTA55 MMBTA56 -60 -80 - -4.0 I B =0) -6 -8 S MMBTA55 MMBTA56 _ 300us, Duty Cycle <

Contextual Info: MCC MMBTA55 THRU MMBTA56
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM

marking 2GM x

Contextual Info: MCC MMBTA55 THRU MMBTA56
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM

USE1201A-A2

Abstract: USE1206A-A2 USE121 USE1212A-A2
Contextual Info: USE U.S. Electronics Inc. St. Louis, Missouri, USA. URL: www.us-electronics.com E-mail: sales@us-electronics. com MAGNETIC TRANSDUCER FEATURES Sealed design for wave soldering and washing ☆ Value applying rated voltage 2400Hz, 1/2 duty square wave ★ Value applying (2400Hz, sine wave, m easuring current 60|j A)

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55WT1G LMBTA56WT1G S-LMBTA55WT1G S-LMBTA56WT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

2gm transistor

Abstract: ota amplifier Modulation using OTA AB-180 OPA622 OPA660
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

NPN/transistor C 331

Abstract: vacuum tubes AB-180 OPA622 OPA660 ota ic
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

Marking 2GM

Abstract: LMBTA56LT1G LMBTA55LT1G LMBTA56 2GM sot LMBTA55 2GM j sot23 6 device Marking 2GM 4
Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. 3 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V CEO –60 –80

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

marking 2GM

Abstract: LMBTA55WT1G 2GM transistor LMBTA55 sc70 marking 2H 2GM j marking 2GM x
Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55WT1G LMBTA56WT1G We declare that the material of product compliance with RoHS requirements. 3 1 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 2 Unit Collector–Emitter Voltage V CEO –60

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR（ PNP ） SOT—23 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current

x-ray film illuminator

Abstract: 2WAY dashpot damping 751168
Contextual Info: Issued March 1997 232-4184 Data Pack G Dashpot dampers Data Sheet RS stock numbers 751-146, 751-152, 751-168, 751-174, 751-180, 751-196, 751-203 Applications ● Prevent damage to sensitive equipment from shock and vibration ● Reduce impact noise ● Damping extreme movements

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G 3 COLLECTOR Pb-free package is available. The suffix G means Pb-free. 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V

Contextual Info: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. SSL-LX5573S0D A E.C.N. NUMBER AND REVISION COMMENTS 1 1 .0 8 .0 6 5.00 [0 .1 9 7 ] 6,00 [0 ,2 3 6 ] ELECTRO-OPTICAL CHARACTERISTICS TA=25T 7,00 [0 ,2 7 6 ] DATE E.C.N. # 1 1 1 4 9 J PARAMETER PEAK WAVELENGTH FORWARD VOLTAGE

SSL-LX5573SYD

Contextual Info: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. SS L- LX 55 73S YD A E.C.N. NUMBER AND REVISION COMMENTS 1 1 .0 8 .0 6 5.00 [0 .1 9 7 ] 6,00 [0 ,2 3 6 ] ELECTRO-OPTICAL CHARACTERISTICS TA=25T 7,00 [0 ,2 7 6 ] DATE E.C.N. # 1 1 1 4 9 J PARAMETER PEAK WAVELENGTH

transistor tic 2250

Contextual Info: SyrnSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBTA55LT1 transistor pnp MMBTA56LT1 FEATURES Power dissipation PCM : 0.225 Collector current Icm : -0. 5 Collector base voltage W (Tamb=25 °C) A : MMBTA55: -60 V MMBTA56: -80 V Operating and storage junction temperature range

MMBTA55

Abstract: MMBTA55 MMBTA56 2gm transistor 6 MMBTA56 2gm transistor 2GM H transistor 2GM sot-23 transistor
Contextual Info: MMBTA55 / MMBTA56 PNP Silicon Elektronische Bauelemente Driver Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 SOT-23 3 A 1 L 2 3 C OLLE C TOR 3 B S Top View 1 V 2 G 1 B AS E C 2 E MIT T E R D H K J Dim Min Max A 2.800

Contextual Info: MMBTA56 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W(Tamb=25OC) * Collector current ICM : -0.5 A * Collector-base voltage VCBO : -80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23

2GM transistor

Abstract: MMBTA56
Contextual Info: MMBTA56 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W(Tamb=25OC) * Collector current ICM : -0.5 A * Collector-base voltage VCBO : -80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23

2GM sot

Abstract: MMBTA56LT1 2gm marking code 2gm transistor MMBTA55 MMBTA55LT1 MMBTA55LT3 MMBTA56 MMBTA56LT1G MMBTA56LT3
Contextual Info: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector −Base Voltage