2GHZ AMPLIFIER Search Results

0603CS

Abstract: ATC600S GSP7430 GSP7430-30 RO4003 2160 transistor transistor t 2180
Contextual Info: GSP7430-30 InGaP HBT Medium Power Amplifier Product Features ● 0. 1 to 6GHz Frequency Range ● +31 dBm P-1dB at 2GHz ● +51 dBm OIP3 at 2GHz ● 17 dB Gain at 2GHz ● 7 dB Noise Figure Product Description The GSP7430-30 is an unmatched General Purpose Medium Power

GSH912-12

Abstract: GSH912 RG03 GSH912-00 angS12 0841 MAG-S11 unmatched bare amplifier 179-14 1200UM
Contextual Info: GSH912 1200um Discrete HFET Product Features ● 0. 1 to 12GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3 dB Noise Figure ● Bare Die -00 or 0805 DFN (-12) plastic package Product Description The GSH912 is an unmatched General Purpose Medium Power Amplifier

RF TRANSISTOR 2GHZ

Abstract: ATC520L103KT16T RF Transistor s-parameter
Contextual Info: GSA804-00 InGaP HBT Gain Block DIE Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω Product Description The GSA804-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that

Contextual Info: SUF-6000 2GHz to 16GHz Broadband pHEMT Amplifier SUF-6000 Proposed 2GHz to 16GHz BROADBAND pHEMT AMPLIFIER Product Description Features RFMD’s SUF-6000 is a high gain broadband 2-stage amplifier covering 2GHz to 16GHz for wideband communication and general purpose applications. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active

s parameters 4ghz

Abstract: GSH904-89 MAG-S22 s 0934
Contextual Info: GSH904-89 Discrete HFET Product Features ● 0. 1 to 4GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3.5 dB Noise Figure Product Description 4 The GSH904-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 4GHz frequency range with 22 dB

GSA804-12

Abstract: s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16
Contextual Info: GSA804-12 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● 0805 Lead–Free/green package ● Available as bare die

bipolar transistor ghz s-parameter

Abstract: RF Transistor s-parameter HBT transistor bipolar transistor s-parameter GSA503-00
Contextual Info: GSA503-00 InGaP HBT Gain Block DIE Product Features ● 0.01MHz to 4 GHz ● +16 dBm P-1dB at 2GHz ● +28 dBm OIP3 at 2GHz ● 20 dB Gain at 2GHz ● 3.8 dB Noise Figure ● Internally-Matched to 50 Ω ● Bare die Applications ● Mobile infrastructure

GSA603-12

Abstract: GSA-603-12 gsa603
Contextual Info: GSA603-12 InGaP HBT Gain Block Product Features ● DC to 3.5GHz ● +16 dBm P-1dB at 2GHz ● +28 dBm OIP3 at 2GHz ● 18 dB Gain at 2GHz ● 3.8 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die

2SC5258

Contextual Info: TOSHIBA 2SC5258 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5258 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.5dB f = 2GHz : Gain = lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: 2SC5259 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5259 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) 1-0.5 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TOSHIBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL v CBO

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5263
Contextual Info: TOSHIBA 2SC5263 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

transistor H1A

Abstract: 2SC5256 marking H1A h1a transistor
Contextual Info: TOSHIBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATION • • : NF = 1.5dB f = 2GHz : Gain = 8.5dB (f = 2GHz) Low Noise Figure High Gain MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO

KTC3660U

Contextual Info: SEMICONDUCTOR KTC3660U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. TENTATIVE FEATURES ・Low Noise Figure, High Gain. ・NF=1.4dB f=2GHz , |S21e|2=13.5dB (f=2GHz). E M RATING UNIT Collector-Base Voltage VCBO

Contextual Info: TOSHIBA 2SC5255 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5255 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-375 : T. Buss : 20 May 1997 : P.G. Transistors & Diodes, Development 2GHz BUFFER-AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Buffer-Amplifier with the new BFG410W Double Poly RFtransistor. The buffer is designed for a frequency f=2GHz. Performance at f=2GHz: Isolation S12~-31dB,

2SC5260

Abstract: OS63
Contextual Info: TOSHIBA 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5260 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB f=2GHz • High Gain : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

Contextual Info: TOSHIBA 2SC5260 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

ATC520L103KT16T

Abstract: Amplifier SOT-89 c4 GSA804-89 s parameters 4ghz ATC520L103KT16
Contextual Info: GSA804-89 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● SOT-89 Lead–Free/green package ● Available as bare die

transistor marking MK

Contextual Info: TOSHIBA TENTATIVE 2SC5256F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High. Gain : NF = 1.5dB f=2GHz : |S21el2= 9-5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

marking IAY

Abstract: 2SC5324
Contextual Info: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : |S2l e|2= 12dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: NJG1126HB6 2GHz BAND LOW NOISE AMPLIFIER • GENERAL DESCRIPTION NJG1126HB6 is a low noise amplifier GaAs MMIC designed for 2GHz band application, and 1.7GHz to 3.8GHz operation with modified schematic. This IC has the function which bypasses LNA, and high gain mode or low gain

2SC5317FT

Contextual Info: 2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF-UHF Band Low Noise Amplifier Applications chip: fT = 16 GHz series • Low Noise Figure :NF = 1.3dB (f = 2GHz) • High Gain:|S21e|2 = 9dB (f = 2GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

MT4S102T

Abstract: TOSHIBA MICROWAVE AMPLIFIER 0-58dB
Contextual Info: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES • Low Noise Figure :NF=0.58dB @f=2GHz • High Gain:|S21e| =16.0dB (@f=2GHz) 4 3 P 8 1 2 0.8±0.05 1.2±0.05