2GHZ AMPLIFIER Search Results

2GHZ AMPLIFIER Result Highlights (5)

Part	Manufacturer	Description	Download
TA75W01FU	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, Bipolar (358) type Dual Op-Amp, 3V to 12V, SOT-505	Datasheet
TC75S67TU	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 2.2V to 5.5V, Low Noise type:VNI=6nV/√Hz@1kHz, SOT-353F	Datasheet
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25	Datasheet
TC75S103F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.8V to 5.5V, I/O Rail to Rail, IDD=100μA, SOT-25	Datasheet
TC75S51F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 7.0V, IDD=60μA, SOT-25/SOT-353	Datasheet

2GHZ AMPLIFIER Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
0603CS Abstract: ATC600S GSP7430 GSP7430-30 RO4003 2160 transistor transistor t 2180 Contextual Info: GSP7430-30 InGaP HBT Medium Power Amplifier Product Features ● 0. 1 to 6GHz Frequency Range ● +31 dBm P-1dB at 2GHz ● +51 dBm OIP3 at 2GHz ● 17 dB Gain at 2GHz ● 7 dB Noise Figure Product Description The GSP7430-30 is an unmatched General Purpose Medium Power	Original	GSP7430-30 GSP7430-30 150mA 0603CS ATC600S GSP7430 RO4003 2160 transistor transistor t 2180	PDF
GSH912-12 Abstract: GSH912 RG03 GSH912-00 angS12 0841 MAG-S11 unmatched bare amplifier 179-14 1200UM Contextual Info: GSH912 1200um Discrete HFET Product Features ● 0. 1 to 12GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3 dB Noise Figure ● Bare Die -00 or 0805 DFN (-12) plastic package Product Description The GSH912 is an unmatched General Purpose Medium Power Amplifier	Original	GSH912 1200um 12GHz GSH912 100MHz GSH912-12 RG03 GSH912-00 angS12 0841 MAG-S11 unmatched bare amplifier 179-14	PDF
bipolar transistor ghz s-parameter Abstract: RF Transistor s-parameter HBT transistor bipolar transistor s-parameter GSA503-00 Contextual Info: GSA503-00 InGaP HBT Gain Block DIE Product Features ● 0.01MHz to 4 GHz ● +16 dBm P-1dB at 2GHz ● +28 dBm OIP3 at 2GHz ● 20 dB Gain at 2GHz ● 3.8 dB Noise Figure ● Internally-Matched to 50 Ω ● Bare die Applications ● Mobile infrastructure	Original	GSA503-00 01MHz GSA503-00 bipolar transistor ghz s-parameter RF Transistor s-parameter HBT transistor bipolar transistor s-parameter	PDF
2SC5258 Contextual Info: TOSHIBA 2SC5258 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5258 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.5dB f = 2GHz : Gain = lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC5258 2SC5258	PDF
Contextual Info: 2SC5259 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5259 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) 1-0.5 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SC5259	PDF
Contextual Info: TOSHIBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL v CBO	OCR Scan	2SC5256	PDF
Contextual Info: TOSHIBA 2SC5255 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5255 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC5255	PDF
2SC5260 Abstract: OS63 Contextual Info: TOSHIBA 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5260 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB f=2GHz • High Gain : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC	OCR Scan	2SC5260 Weig84 2SC5260 OS63	PDF
Contextual Info: TOSHIBA 2SC5260 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC5260	PDF
marking IAY Abstract: 2SC5324 Contextual Info: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : \|S2l e\|2= 12dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC5324 marking IAY 2SC5324	PDF
Contextual Info: NJG1126HB6 2GHz BAND LOW NOISE AMPLIFIER • GENERAL DESCRIPTION NJG1126HB6 is a low noise amplifier GaAs MMIC designed for 2GHz band application, and 1.7GHz to 3.8GHz operation with modified schematic. This IC has the function which bypasses LNA, and high gain mode or low gain	Original	NJG1126HB6 NJG1126HB6	PDF
60GHz transistor Abstract: MT3S106FS 60Ghz germanium transistors NPN Contextual Info: MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.2dB @f=2GHz • High Gain:\|S21e\|2=10dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05	Original	MT3S106FS 60GHz transistor MT3S106FS 60Ghz germanium transistors NPN	PDF
2SC5321 Abstract: bh marking Contextual Info: 2SC5321 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : \|S2le\|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC5321 16GHz SC-70 2SC5321 bh marking	PDF
2SC5259 Contextual Info: TOSHIBA 2SC5259 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5259 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) Unit in mm + 0.5 MAXIMUM RATINGS (Ta = 25°C) SYMBOL	OCR Scan	2SC5259 2SC5259	PDF

2SC5321 Contextual Info: 2SC5321 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : \|S2l e\|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC5321 16GHz 2SC5321	PDF
transistor H1A Abstract: marking H1A 2SC5256 marking MK Contextual Info: TOSHIBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATION • • : NF = 1.5dB f = 2GHz : Gain = 8.5dB (f = 2GHz) Low Noise Figure High Gain MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO	OCR Scan	2SC5256 transistor H1A marking H1A 2SC5256 marking MK	PDF
2SC5261 Abstract: ma706 Contextual Info: TOSHIBA 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO	OCR Scan	2SC5261 2SC5261 ma706	PDF
2SC5261 Contextual Info: TOSHIBA 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO	OCR Scan	2SC5261 2SC5261	PDF
Contextual Info: TOSHIBA 2SC5263 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC5263	PDF
Contextual Info: TOSHIBA TENTATIVE 2SC5322F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm v w f VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : jS2i ep= lOdB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SC5322F	PDF
2SC5497 Abstract: NF 841 Contextual Info: TOSHIBA 2SC5497 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5497 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.4dB f=2GHz • High Gain : Ga = 14dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL	OCR Scan	2SC5497 2SC5497 NF 841	PDF
Contextual Info: TOSHIBA 2SC5261F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB f=2GHz • High Gain : \|S 2i el2= 9-5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL	OCR Scan	2SC5261F	PDF
Contextual Info: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : \|S2le\|2= 12dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC5324	PDF
Contextual Info: TOSHIBA 2SC5254 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5254 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain 1-0.5 : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SC5254	PDF

2GHZ AMPLIFIER Search Results

2GHZ AMPLIFIER Result Highlights (5)

2GHZ AMPLIFIER Datasheets Context Search

0603CS

GSH912-12

bipolar transistor ghz s-parameter

2SC5258

2SC5260

marking IAY

60GHz transistor

2SC5321

2SC5259

2SC5321

transistor H1A

2SC5261

2SC5261

2SC5497