2C4261 Search Results

Contextual Info: 2C4261HV Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0u÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.150

2N4260

Contextual Info: MOTOROLA SC ~34 OIODES/OPTOJ 6367255 MOTOROLA SC »E|b3b75SS <DIODES/OPTO □ 0 3 7 cn t , 34C 37996 t. | r-*7-/3 SILICON SMAf .L-SIGNAL TRANSISTOR DICE continued) 2C4261 DIE NO, — PNP LINE SOURCE — DMB265 This die provides performance similar to that of the following device types:

2N4260

Abstract: 2N4261 2C4261 2N4260UB 2N4261UB SD4261 SD4261F SQ4261 SQ4261F chip type geometry Semicoa
Contextual Info: Data Sheet No. 2C4261 Generic Packaged Parts: Chip Type 2C4261 Geometry 0014 Polarity PNP 2N4260, 2N4261 Chip type 2C4261 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for low voltage, low gain RF

500t

Contextual Info: MO T O R O L A SC DIODES/OPTO 3TE D • b3b?2S5 DD617T1 T ■MOT7 Chips Selector Guide ° The following tables list the various Motorola discrete product chips first by specific product categories and then in a logical fashion that permits rapid comparison of the more important