2BL3 Search Results

OP165W

Abstract: OP505W IB 115
Contextual Info: @.OPIEK •i bv^asao □□□2bL3 abb Product Bulletin O P505W June 1996 NPN Silicon Phototransistor Type OP5Q5W Features A b so lute M axim um R atings T a = 25° C unless otherw ise noted • Wide receiving angle • T-1 package style • Small package size for space limited

2BL3

Abstract: CASE 403A MBRS230LT3
Contextual Info: MBRS230LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: MATERIAL SPECIFICATION: 1. HOUSING:PBT PLASTIC UL94V-0 5.20 2. CONTACT.COPPER ALLX)Y 3. CARD H00K:SUS301 ELECTRICAL PERFORMANCE 1. RATED VOLTAGE(MAX.):30V AC/DC 2. RATED CURRENT(MAX ):!.OA AC/DC 3. DIELECTRIC STRENGTH.250V AC FOR I MINUTE BETWEEN ADJACENT TERMINAL, NO BREAKDOWN

Contextual Info: MBRS230LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

2BL3

Abstract: CASE 403A 403A-03 MBRS230LT3
Contextual Info: MBRS230LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

rx5re

Abstract: 5.1 amplifire circuit diagram RH5RE50AA-T1 s 498 ats 2300
Contextual Info: K O t S Q D D VOLTAGE REGULATOR FOR LARG E O U TP U T C U R R EN T n RX5RE SERIES •OUTLINE T h e R X 5 R E S e rie s a re v o lta g e re g u la to r IC s w ith h ig h o u tp u t v o lta g e a c c u ra c y a n d u ltra - lo w q u ie sce n t c u rre n t b y C M O S p ro cess. E a c h o f th e se IC s co n sists o f a v o lta g e re fe re n c e u n it, a n e rro r a m p lifie r, a d r i­

MBRS230LT3

Abstract: MBRS230LT3G MBRS230
Contextual Info: MBRS230LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

403A

Abstract: 403A-03 MBRS230LT3
Contextual Info: MBRS230LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high