2BF010 Search Results
2BF010 Price and Stock
Honeywell Sensing and Control PX3AN2BF010BSDAXPX3 PRESSURE SENSOR | 
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PX3AN2BF010BSDAX | Bulk | 5 | 
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PX3AN2BF010BSDAX | 
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Honeywell Sensing and Control PX3AN2BF010BSCHLPX3 PRESSURE SENSOR | 
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PX3AN2BF010BSCHL | Bulk | 1 | 
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Honeywell Sensing and Control PX3AN2BF010BSCHXSENSOR 145.04PSIS 1/8"NPT .02A | 
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Honeywell Sensing and Control PX3AN2BF010BSCHLCUPX3 PRESSURE SENSOR | 
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PX3AN2BF010BSCHLCU | Bulk | 60 | 
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Siemens 6ES7648-2BF01-0XG0 | 
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2BF010 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SM28F001AX
Abstract: AX-200 29020 PPH 2222 36 64 mbit static ram simm 
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 OCR Scan  | 
SM28F001AX 80-pin --\05flu6enterline SM2BF001AX SM28F001 AX-200 ER-20, ER-24, 28F010 29020 PPH 2222 36 64 mbit static ram simm | |
ic 4521 function
Abstract: 2BF010 DPZ128X32VI 
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 OCR Scan  | 
DPZ128X32VI DPZ128X32VIP DPZ128X32VI/VIP DPZ128X32VI/DPZ128X32VIP 250ns 120mA 400nA 2BF010 ic 4521 function | |
PLD intel
Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD 
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 OCR Scan  | 
Q07bBbl 28F010 1024K NonvolaF010-120 TN28F010-120 P28F010-150 N28F010-150 N28F010-90V05 E28F010-120 E28F010-150 PLD intel intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD | |
TN28F010Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 )j,s Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp  | 
 OCR Scan  | 
28F010 1024K 32-Pin 32-Lead 28F010-65 28F010-90 TN28F010 | |
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 Contextual Info: in te i A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) Automotive Temperature Range: —40°C to + 125°C Flash Memory Electrical Chlp-Erase — 1 Second Typical Chlp-Erase Qulck-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 2 Second Chip-Program  | 
 OCR Scan  | 
A28F010 1024K 32-LEAD AP28F010-120 AP28F010-150 AN28F010-120 AN28F010-150 ER-20, ER-24, RR-60, | |
2BF010Contextual Info: TMS28F010B 1048576-BIT FLASH MEMORY SMJS824A-MAY 1995 - REVISED JUNE 1995 Organization . . . 128K x 8-Bit Flash Memory Pin Compatible With Existing 1-Megabit EPROMs Vqc Tolerance ±10% All Inputs/Outputs TTL Compatible Maximum Access/Minimum Cycle Time ’2BF010B-90 90 ns  | 
 OCR Scan  | 
TMS28F010B 1048576-BIT SMJS824A-MAY 2BF010B-90 28F010B-10 28F010B-12 28F010B-15 168-Hour 772S1-1443 2BF010 | |
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 Contextual Info: TMS28F010 1 048 576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY _ SMJS011A-DECEMBER 1992-flEVISED MARCH 1993 N PACKAGEt Organization . . . 128K x 8-Bit Flash Memory Pin Compatible with Existing 1-Megabit EPROMs  | 
 OCR Scan  | 
TMS28F010 576-BIT SMJS011A-DECEMBER 1992-flEVISED 28F010-10 28F010-12 28F010-15 28F010-17 168-Hour |