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    Honeywell Sensing and Control PX3AN2BF010BSCHL

    PX3 PRESSURE SENSOR
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    DigiKey PX3AN2BF010BSCHL Bulk 1
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    Master Electronics PX3AN2BF010BSCHL
    • 1 $51.72
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    • 100 $38.00
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    Honeywell Sensing and Control PX3AN2BF010BSCHX

    SENSOR 145.04PSIS 1/8"NPT .02A
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    Honeywell Sensing and Control PX3AN2BF010BSDAX

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    DigiKey PX3AN2BF010BSDAX Bulk 5
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    Master Electronics PX3AN2BF010BSDAX
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    Honeywell Sensing and Control PX3AN2BF010BSCHLCU

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    DigiKey PX3AN2BF010BSCHLCU Bulk 60
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    Master Electronics PX3AN2BF010BSCHLCU
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    Siemens 6ES7648-2BF01-0XG0

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    Chip-Germany GmbH 6ES7648-2BF01-0XG0 1
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    2BF010 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SM28F001AX

    Abstract: AX-200 29020 PPH 2222 36 64 mbit static ram simm
    Contextual Info: in te i' SM28F001AX 1 MBYTE 512K x 16 CMOS FLASH SIMM High-Performance — 135 ns Maximum Access Time — 14.81 MB/s Read Transfer Rate 100,000 Rewrite Cycles Typical/ Component Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase 16 jjls Typical Word Write


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    SM28F001AX 80-pin --\05flu6enterline SM2BF001AX SM28F001 AX-200 ER-20, ER-24, 28F010 29020 PPH 2222 36 64 mbit static ram simm PDF

    ic 4521 function

    Abstract: 2BF010 DPZ128X32VI
    Contextual Info: DEN SE-PAC 'S MICROSYSTEMS 4 MEGABIT FLASH EEPROM DPZ128X32VI/DPZ128X32VIP DESCRIPTION: The D P Z 1 2 8X 32VI/VIP is a 4 m egabit CMOS FLASH Electrically Erasable and Programmable nonvolatile memory module. The m odule is b u ilt w ith four 128K x 8 FLASH


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    DPZ128X32VI DPZ128X32VIP DPZ128X32VI/VIP DPZ128X32VI/DPZ128X32VIP 250ns 120mA 400nA 2BF010 ic 4521 function PDF

    PLD intel

    Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
    Contextual Info: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program


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    Q07bBbl 28F010 1024K NonvolaF010-120 TN28F010-120 P28F010-150 N28F010-150 N28F010-90V05 E28F010-120 E28F010-150 PLD intel intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD PDF

    TN28F010

    Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 )j,s Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


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    28F010 1024K 32-Pin 32-Lead 28F010-65 28F010-90 TN28F010 PDF

    Contextual Info: in te i A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) Automotive Temperature Range: —40°C to + 125°C Flash Memory Electrical Chlp-Erase — 1 Second Typical Chlp-Erase Qulck-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 2 Second Chip-Program


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    A28F010 1024K 32-LEAD AP28F010-120 AP28F010-150 AN28F010-120 AN28F010-150 ER-20, ER-24, RR-60, PDF

    2BF010

    Contextual Info: TMS28F010B 1048576-BIT FLASH MEMORY SMJS824A-MAY 1995 - REVISED JUNE 1995 Organization . . . 128K x 8-Bit Flash Memory Pin Compatible With Existing 1-Megabit EPROMs Vqc Tolerance ±10% All Inputs/Outputs TTL Compatible Maximum Access/Minimum Cycle Time ’2BF010B-90 90 ns


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    TMS28F010B 1048576-BIT SMJS824A-MAY 2BF010B-90 28F010B-10 28F010B-12 28F010B-15 168-Hour 772S1-1443 2BF010 PDF

    Contextual Info: TMS28F010 1 048 576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY _ SMJS011A-DECEMBER 1992-flEVISED MARCH 1993 N PACKAGEt Organization . . . 128K x 8-Bit Flash Memory Pin Compatible with Existing 1-Megabit EPROMs


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    TMS28F010 576-BIT SMJS011A-DECEMBER 1992-flEVISED 28F010-10 28F010-12 28F010-15 28F010-17 168-Hour PDF