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Honeywell Sensing and Control / MICRO SWITCH PX3AN2BF010BSCHX Industrial Pressure Sensors PX Pressure Sensor, Heavy Duty
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Sager	PX3AN2BF010BSCHX					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Siemens 6ES7648-2BF01-0XG0
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Chip-Germany GmbH	6ES7648-2BF01-0XG0		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2BF010 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SM28F001AX Abstract: AX-200 29020 PPH 2222 36 64 mbit static ram simm Contextual Info: in te i' SM28F001AX 1 MBYTE 512K x 16 CMOS FLASH SIMM High-Performance — 135 ns Maximum Access Time — 14.81 MB/s Read Transfer Rate 100,000 Rewrite Cycles Typical/ Component Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase 16 jjls Typical Word Write	OCR Scan	sm28f001ax 80-pin --\05flu6enterline sm2bf001ax +8sm28f001 ax-200 er-20 er-24 28f010 29020 pph 2222 36 64 mbit static ram simm	PDF
ic 4521 function Abstract: 2BF010 DPZ128X32VI Contextual Info: DEN SE-PAC 'S MICROSYSTEMS 4 MEGABIT FLASH EEPROM DPZ128X32VI/DPZ128X32VIP DESCRIPTION: The D P Z 1 2 8X 32VI/VIP is a 4 m egabit CMOS FLASH Electrically Erasable and Programmable nonvolatile memory module. The m odule is b u ilt w ith four 128K x 8 FLASH	OCR Scan	dpz128x32vi dpz128x32vip dpz128x32vi/vip dpz128x32vi/dpz128x32vip +5250ns 120ma 400na 2bf010 ic 4521 function	PDF
PLD intel Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD Contextual Info: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program	OCR Scan	q07bbbl 28f010 1024k nonvolaf010-120 +12tn28f010-120 p28f010-150 n28f010-150 n28f010-90v05 e28f010-120 e28f010-150 pld intel intel 28f010 07b27 interfacing eprom and eeprom 28f010-150 intel pld	PDF
TN28F010 Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 )j,s Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp	OCR Scan	28f010 1024k 32-pin 32-lead +328f010-65 28f010-90 tn28f010	PDF
Contextual Info: in te i A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) Automotive Temperature Range: —40°C to + 125°C Flash Memory Electrical Chlp-Erase — 1 Second Typical Chlp-Erase Qulck-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 2 Second Chip-Program	OCR Scan	a28f010 1024k 32-lead ap28f010-120 +6ap28f010-150 an28f010-120 an28f010-150 er-20 er-24 rr-60	PDF
2BF010 Contextual Info: TMS28F010B 1048576-BIT FLASH MEMORY SMJS824A-MAY 1995 - REVISED JUNE 1995 Organization . . . 128K x 8-Bit Flash Memory Pin Compatible With Existing 1-Megabit EPROMs Vqc Tolerance ±10% All Inputs/Outputs TTL Compatible Maximum Access/Minimum Cycle Time ’2BF010B-90 90 ns	OCR Scan	tms28f010b 1048576-bit smjs824a-may 2bf010b-90 +628f010b-10 28f010b-12 28f010b-15 168-hour 772s1-1443 2bf010	PDF
Contextual Info: TMS28F010 1 048 576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY _ SMJS011A-DECEMBER 1992-flEVISED MARCH 1993 N PACKAGEt Organization . . . 128K x 8-Bit Flash Memory Pin Compatible with Existing 1-Megabit EPROMs	OCR Scan	tms28f010 576-bit smjs011a-december 1992-flevised +528f010-10 28f010-12 28f010-15 28f010-17 168-hour	PDF