2AAA 5555 Search Results

W49F102

Contextual Info: W49F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F102 results in fast program/erase operations with

W49L102

Abstract: A1A15
Contextual Info: Preliminary W49L102 64K x 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is

2AAA 5555

Abstract: tcet 1010
Contextual Info: W49L102 64K x 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase operations with

W29F102Q-55

Abstract: W29F102 MM 5555
Contextual Info: Preliminary W29F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29F102 results in fast program/erase operations

Contextual Info: Preliminary W29F201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is

Contextual Info: Preliminary W29N102C 64K x 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W29N102C is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is

W49F201

Contextual Info: Preliminary W49F201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is

w49f002up12b

Abstract: W49F002U-12B W49F002U
Contextual Info: W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase operations

W49L102

Contextual Info: Preliminary W49L102 64K x 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is

W29F102

Contextual Info: W29F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29F102 results in fast program/erase operations

W49L201

Abstract: XX30
Contextual Info: Preliminary W49L201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is

W29F020

Abstract: W49F020 W49F020-70 W49F020-90
Contextual Info: Preliminary W49F020 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not

Contextual Info: W29F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29F102 results in fast program/erase operations with

Contextual Info: Preliminary W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is

JEP-137

Abstract: JESD68 SW4506 T3A-2 SST38VF166 JEP137 be3vil
Contextual Info: 16 Megabit FlashBank Memory SST38UF166 / SST38VF166 FEATURES: Advance Information • Single Voltage Read and Write Operations – SST38UF166: 2.2-2.8V – SST38VF166: 2.7-3.6V • Separate Memory Banks for Code or Data – Simultaneous Read and Write Capability

winbond w49f002up12b

Abstract: W49F002UP12B WINBOND W49F002U-12B W49F002U-12B Winbond W49F002U W49F002U
Contextual Info: W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase operations

W29F002

Abstract: W49F002 W49F002B W49F002N W49F002U n70b a170 VS W29F W29F002B
Contextual Info: Preliminary W49F002/B/U/N 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002/B/U/N is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt

AT49F1025

Abstract: AT49F1025-12JI
Contextual Info: Features • • • • • • • • • • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 8K word Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Word By Word Programming - 10 µs/Word Typical

W29F020

Abstract: W49F020 W49F020-70 W49F020-90
Contextual Info: Preliminary W49F020 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not

w29c042-90

Abstract: W29C042P-90 W29C042T-90
Contextual Info: W29C042 512K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C042 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K × 8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C042 results in fast write (erase/

W49F102

Contextual Info: W49F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F102 results in fast program/erase operations with

W49L201

Contextual Info: W49L201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L201 results in fast program/erase operations with

AT49F2048

Contextual Info: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 70 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 8K Words (16K bytes) Parameter Blocks

AT49F516

Contextual Info: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 55 ns Internal Program Control and Timer 8K Word Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Word-By-Word Programming - 10 µs/Word Typical