2A PLASTIC ENCAPSULATE Search Results

lc241

Abstract: E116950 RS-443
Contextual Info: LC Series • Mini-SIP SSR • Ratings to 2A @ 280 VAC • Triac output • DC control • Zero-crossing resistive loads or random-fire (inductive loads) output • Plastic encapsulated PRODUCT SELECTION Control Voltage 1.5A 2A 4-10 VDC LC241 LC242 AVAILABLE OPTIONS

E116950

Abstract: RS-443 LC242
Contextual Info: LC Series • Mini-SIP SSR • Ratings to 2A @ 280 VAC • Triac output • DC control • Zero-crossing resistive loads or random-fire (inductive loads) output • Plastic encapsulated PRODUCT SELECTION Control Voltage 1.5A 2A 4-10 VDC LC241 LC242 AVAILABLE OPTIONS

Contextual Info: LC Series • Mini-SIP SSR • Ratings to 2A @ 280 VAC • Dual SCR output normally open • DC control • Zero-crossing (resistive loads) or random-fire (inductive loads) output • Plastic encapsulated PRODUCT SELECTION Control Voltage 1.5A 2A 4-10 VDC

Contextual Info: LC Series • Mini-SIP SSR • Ratings to 2A @ 280 VAC • Dual SCR output normally open • DC control • Zero-crossing (resistive loads) or random-fire (inductive loads) output • Plastic encapsulated PRODUCT SELECTION Control Voltage 1.5A 2A 4-10 VDC

Contextual Info: LC Series • • • • • • Mini-SIP SSR Ratings to 2A @ 280 VAC Dual SCR output normally open DC control Zero-crossing (resistive loads) or random-fire (inductive loads) output Plastic encapsulated PRODUCT SELECTION Control Voltage 1.5A 2A 4-10 VDC

Contextual Info: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter

MPS750

Contextual Info: MPS750 -2A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Amplification. Collector 1Emitter 2Base 3Collector 3 2 Base Millimeter

MMBT3904 jiangsu

Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1585S TRANSISTOR PNP TO-92S FEATURES 1. EMITTER Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted

2SC4115

Abstract: 2SA1585 4115S 4115
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR NPN SOT-89 FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements to 2SA1585

MARKING 2A

Abstract: MMBT3906 MMBT3904
Contextual Info: MMBT3906 Pb RoHS 0.3 Watts PNP Plastic-Encapsulate Transistors COMPLIANCE SOT-23 Features — As complementary type, the NPN transistor MMBT3904 is recommended — Epitaxial planar die construction — Marking: 2A Dimensions in inches and millimeters Maximum Ratings

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER

2SA1160

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1160 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -2A Collector-base voltage

2SA1585S

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1585S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PD : 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage

2SD2150

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 2SD2150 TRANSISTOR Plastic-Encapsulate Transistors SOT-89 NPN FEATURES z Excellent current-to-gain characteristics z Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A

STD1862

Abstract: TRANSISTOR stb1277 STB1277
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors STB1277 TRANSISTOR PNP TO-92 FEATURES z Audio power amplifier z High current application z High current : IC=-2A z Complementary pair with STD1862 1. EMITTER 2. COLLECTOR

STB1277

Abstract: STB1277Y
Contextual Info: STB1277 -2A , -30V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. High Total Power Dissipation. High hFE and Good Linearity

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 STB1277 TRANSISTOR PNP FEATURES z Audio power amplifier z High current application z High current : IC=-2A z Complementary pair with STD1862 1. EMITTER 2. COLLECTOR

2SD1761

Abstract: 2SB1187
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD1761 TRANSISTOR NPN TO-220F 1. BASE FEATURES z Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A z Excellent current characteristics of DC current gain.

Contextual Info: CZD1182 -2A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   D-Pack TO-252 Designed for general Excellent DC Current Gain Characteristics CLASSIFICATION OF hFE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR NPN SOT-89-3L FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements to 2SA1585

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2150 TRANSISTOR SOT-89-3L NPN FEATURES z Excellent current-to-gain characteristics z Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A

Contextual Info: MCC TM Micro Commercial Components Features • • • • • • PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.5W Tamb=25ć Collector current: ICM = -2A Collector-base voltage: V(BR)CBO = -50V Operating and storage junction temperature range