2A PLASTIC ENCAPSULATE Search Results

STD1862

Abstract: TRANSISTOR stb1277 STB1277
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors STB1277 TRANSISTOR PNP TO-92 FEATURES z Audio power amplifier z High current application z High current : IC=-2A z Complementary pair with STD1862 1. EMITTER 2. COLLECTOR

STB1277

Abstract: STB1277Y
Contextual Info: STB1277 -2A , -30V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. High Total Power Dissipation. High hFE and Good Linearity

2sc3279

Abstract: 2SC3279-N transistor 2sC3279 2SC3279-L 2SC3279-M 2SC3279-P 2SC3279N 2SC32
Contextual Info: 2SC3279 2A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High DC current gain and excellent hFE linearity. Low saturation voltage. G H 1Emitter 2Collector

2SC4115E

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A)

2SD2150

Abstract: transistor marking 2a marking CFR
Contextual Info: 2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE SAT =0.5V(Max.) for IC / IB=2A/0.1A

2SD2012

Abstract: 2SB1375
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1375 TO-220 TRANSISTOR PNP 1. BASE FEATURES z High Power Dissipation: PC=25W(TC=25℃) z Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) z Collector metal(Fin)is Coverd with Mold Regin

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2 Plastic-Encapsulate Transistors 2SD1760 TRANSISTOR NPN TO-252 FEATURES z Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) z Complements the 2SB1184. 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1375 TO-220 TRANSISTOR PNP 1. BASE FEATURES z High Power Dissipation: PC=25W(TC=25℃) z Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) z Collector metal(Fin)is Coverd with Mold Regin

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507

Contextual Info: : S v m Se m i : 5YM5EMI 5EMIC0 MDUCT0 R SOT -23 Plastic Encapsulate Transistors SOT — 23 BCW61 C TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.25 W Collector current Icm : -0.1 A 2A (Tamb=25 *C) 1.3 4H Collector base voltage

2SB1188

Abstract: 2SD1766 marking 82 sot marking 02A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1766 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) z Complements to 2SB1188 2. COLLECTOR 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Transistor C3205

Abstract: C3205 C3205 transistor
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Plastic-Encapsulate Transistor • • • • • Power Dissipation: 1W Tamb=25ć Collector Current: 2A

MMBT589

Contextual Info: MMBT589 -1A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High current surface mount PNP silicon switching transistor for Load management in portable applications

MPS651

Contextual Info: MPS651 0.625 W, 2 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES G Switching and Amplifier Applications H J A Collector 2 D REF. B A B C D E F G

B772 PNP

Abstract: b772 p B772 SPECIFICATION br b772 B772 B772 equivalent B772 C S H B772 B772 E pnp b772
Contextual Info: B772 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126 Features 2.7±0.2 7.6±0.2 * Low speed switching 1.3±0.2 4.0±0.1 10.8±0.2 O 3.1± 0.1 MAXIMUM RATINGS* TA=25 C unless otherwise noted

2SB1188-Q

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • 2SB1188-P 2SB1188-Q 2SB1188-R PNP Plastic-Encapsulate Transistors Case Material:Molded Plastic. UL Flammability

transistor JSW

Abstract: transistor JSW 12 ZTX449 high power amp 100mhz 1w ferranti JSW 70 transistor HFE 400 1w Scans-00107847 jsw transistor SE26
Contextual Info: 4 FERRANTI ZTX449 semiconductors NPN Silicon Planar Medium Power Transistor DESCRIPTION The ZTX449 is a high current transistor encapsulated in the popular E-line package. The device is intended for low voltage, high current L.F. applications and features high power

2SD1802

Contextual Info: 2SD1802 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER 1 3 2 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage

2sc1162

Abstract: transistor 2SC1162 2SC1162C 2SC1162-B 2SC1162-C 2SC1162-D 2SC1162 C
Contextual Info: 2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-126 Low frequency power amplifier Emitter Collector Base CLASSIFICATION OF hFE 1

colour code diode zener

Abstract: BAR99 s790 FMMD6050 ZC830 diode marking code W5 diode marking x6 SOT-23 MARKING w5 W9 diode ZC830B
Contextual Info: H D 2A I FERRANTI HD3A nr 11semiconductors L H D 4A High Speed S w itching Diodes D ES C R IPTIO N These devices applications. are intend ed fo r high speed s w itch ing * Encapsulated in th e popular SOT-23 p ackage th e device is designed specifically fo r use in thin and th ic k film hybrid

Contextual Info: 2SB1274 -3A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-220J FEATURES General Purpose Switching and Amplification. Wide ASO Adoption of MBIT Process Low Saturation Voltage.

Contextual Info: 2SD1899 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2 3 D-PAK(TO-252) Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage

S2080

Contextual Info: Application Note S2080 Moisture Effects on the Soldering of Plastic Encapsulated Devices Introduction Improper packaging, storage, and handling of plastic encapsulated devices PED’s can trap moisture within the devices and lead to damage during reflow soldering

Moisture Sensitivity Level Rating

Abstract: JESD22-A113 moisture sensitive handling and packaging moisture sensitivity s2083 JEDEC J-STD-033 moisture handling and packaging S2080 J-STD-033
Contextual Info: Moisture Effects on the Soldering of Plastic Encapsulated Devices S2080 V4 Introduction Improper packaging, storage, and handling of plastic encapsulated devices PED’s can trap moisture within the devices and lead to damage during reflow soldering to printed circuit boards. As part of reliability qualification