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    2SK3539 Search Results

    2SK3539 Datasheets (5)

    Panasonic
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK3539
    Panasonic TRANS JFET N-CH 50V 0.001MA SMini3-G1 Original PDF 64.1KB 3
    2SK3539
    Panasonic Silicon N-channel MOSFET Original PDF 80.97KB 3
    2SK3539
    Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF 32.06KB 1
    2SK353900L
    Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 50V .1A S-MINI-3P Original PDF 3
    2SK3539G0L
    Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 50V .1A S-MINI-3P Original PDF 4

    2SK3539 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SJ0672

    Abstract: 2SK3539 UP04979
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter


    Original
    2002/95/ecup049792sj06722sk3539+2od-723-20lues PDF

    ON4030

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter


    Original
    2002/95/ecup049792sj06722sk3539+1on4030 PDF

    2SK3539G

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain Th an W is k y


    Original
    2002/95/ec2sk3539g PDF

    2SJ0672

    Abstract: 2SK3539 UP04979
    Contextual Info: Composite Transistors UP04979 Silicon N-channel MOSFET Tr1 Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter Tr1 Symbol Rating Unit VDSS 50 V Marking Symbol: 4T Gate-source voltage


    Original
    up049792sj06722sk3539od-723 PDF

    2SK3539

    Contextual Info: Silicon MOSFETs Small Signal 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band • Gate protection diode built-in 0.9±0.1


    Original
    2sk3539 PDF

    2SJ0672

    Abstract: 2SK3539 UP04979
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539


    Original
    2002/95/ecup049792sj06722sk3539+1od-723 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 • Features 1 • 2SJ0672 + 2SK3539 ■ Absolute Maximum Ratings Ta = 25°C


    Original
    2002/95/ecup049792sj06722sk3539+1od-723 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • High-speed switching • Wide frequency band • Gate protection diode built-in ■ Absolute Maximum Ratings Ta = 25°C


    Original
    2002/95/ec2sk3539g PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ 2 0.2±0.1 1 2.1±0.1 M Di ain sc te on na tin nc ue e/ d • High-speed switching


    Original
    2002/95/ec2sk3539 PDF

    2SK3539

    Contextual Info: Silicon MOSFETs Small Signal 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band • Gate-peotection diode built-in 0.9±0.1


    Original
    2sk3539 PDF

    2SK3539

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band


    Original
    2002/95/ec2sk3539 PDF

    2SJ0672

    Abstract: 2SK3539 UP04979
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539


    Original
    2002/95/ecup049792sj06722sk3539+1od-723 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na


    Original
    2002/95/ec2sk3539g PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 3 M Di ain sc te on na tin nc ue e/ d 5˚ • High-speed switching


    Original
    2002/95/ec2sk3539sc-70 PDF

    2SK3539G

    Abstract: YP diode code marking
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching • Package • High-speed switching • Wide frequency band • Gate protection diode built-in


    Original
    2002/95/ec2sk3539gyp diode code marking PDF

    2SK3539

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 2 0.2±0.1 1 5˚ ue pl d in an c


    Original
    2002/95/ec2sk3539 PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    pamp13-n1mip2f3mip2f4mip382+7mip2e7dmymip2f2mip291mip414smip2e5dmymip411mip3e3smy equivalent PDF

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    respons39o-220d-a1ma26p02maz3082j+152sc5779ma26p07maz30912sc5829ma27e020gma3df252pg011dd5x062jdg3d501dsktj04da3df50db2u308ssmini2-f5-bdsk3j02dsc3f01 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01878 Silicon N-channel MOSFET Unit: mm +0.05 (0.30) 4 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 1


    Original
    2002/95/ecup018782sk3539 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01878 Silicon N-channel MOSFET Unit: mm +0.05 (0.30) 4 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 1


    Original
    2002/95/ecup018782sk3539 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04878G Silicon N-channel MOSFET For switching • Features  Package  Allowing 2.5 V drive  Incorporating a built-in gate protection-diode  Reduction of the mounting area and assembly cost by one half


    Original
    2002/95/ecup04878g2sk3539g PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04878 Silicon N-channel MOSFET For switching 5 0.12+0.05 –0.02 4 • Features 5˚ • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • S-Mini type 6-pin package, reduction of the mounting area and


    Original
    2002/95/ecxp048782sk3539 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04878 Silicon N-channel MOSFET For switching 5 0.12+0.05 –0.02 4 • Features 5˚ • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • S-Mini type 6-pin package, reduction of the mounting area and


    Original
    2002/95/ecxp048782sk3539 PDF