2SK190 Search Results

2SK1904

Contextual Info: 2SK1904 LD L o w D rive S eries VDs s = 1 0 0 V 2063 N Channel Power M O SFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M icaless package facilitatin g m ounting. A b so lu te M ax im u m R a tin g s a t T a = 25°C

d3s diode

Contextual Info: 2SK1906 LD L o w D rive S eries V D3S= 1 0 0 V 2063 N Channel Power M OSFET F e a tu re s • Low ON resistance. - Very high-speed switching. •Low-voltage drive. ■M icaless package facilitating mounting. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C

2SK1904

Contextual Info: Ordering n u m b e r:EN42 1 1 _ 2SK1904 No.4211 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. - M icaless package facilitating m ounting.

2SK1902

Contextual Info: 2SK1902 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high speed switching. • Low voltage drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage

2SK1904

Contextual Info: Ordering number:EN4211 N-Channel Silicon MOSFET 2SK1904 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK1904]

2SK1900

Abstract: ITR02166 ITR02167 ITR02168 ITR02169 ITR02170 ITR02171
Contextual Info: 2SK1900 Ordering number : EN4210A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1900 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable

Contextual Info: 2SK1900 Ordering number : EN4210A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1900 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable

V222A

Contextual Info: 2SK1907 2093 2090 LD Low D rive S e rie s VdsS= 100V N Channel Power MOSFET i|M226 F e a tu re s - Low ON resistance. - Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of m anufacturing processes for 2SK1907-applied equipment.

100AVS

Contextual Info: 2SK1900 2090 2093 LD L o w D rive S e r i e s VDSs = 60V N Channel Power MOSFET E'42 10 F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1900-applied equipm ent.

2SK1909

Abstract: i0c0
Contextual Info: 2SK1909 2093 2090 LD L o w D rive S eries V DSS= 1 0 0 V N Channel Power MOSFET 4227 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1909-applied equipm ent.

2SK1905

Contextual Info: Ordering number:EN4649 N-Channel Silicon MOSFET 2SK1905 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating easy mounting. unit:mm 2063A

2SK1907

Contextual Info: Ordering number : EN4226 SANYO Semiconductors DATA SHEET 2SK1907 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SK1907] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching.

Contextual Info: 2SK1908 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)

2SK1909

Contextual Info: Ordering number: EN 4227 2SK1909 No.4227 N-Channel MOS Silicon FËT Very High-Speed Switching Applications F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SK1909-applied equipment.

2SK1909

Contextual Info: Ordering number:EN4227 N-Channel Silicon MOSFET 2SK1909 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SK1909] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

2SK1905

Abstract: EN4649
Contextual Info: Ordering number:EN4649 N-Channel Silicon MOSFET 2SK1905 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating easy mounting. unit:mm 2063A

2SK1904

Contextual Info: Ordering number:EN4211 N-Channel Silicon MOSFET 2SK1904 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK1904]

2SK1908

Abstract: BX-0927
Contextual Info: Ordering number:EN4650 N-Channel Silicon MOSFET 2SK1908 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A [2SK1908] 10.2 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications

EN4650

Abstract: 2SK1908
Contextual Info: Ordering number:EN4650 N-Channel Silicon MOSFET 2SK1908 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A [2SK1908] 10.2 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications

Contextual Info: 2SK1900FD Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)1.65 Minimum Operating Temp (øC)-55

2SK190

Abstract: 2SK1903 SC46 T0220AB
Contextual Info: KNo. N * 5 4 4 8 SANYO =m m tm m m NO. % 5448 13196 2SK1903 Vifiiru unit Absolute Maximum Ratings / Ta = 25°C K W > - y -X S JB E v —h • y - x f l u i H I/^ > l g D C ) HI/-Y {A)VX) fii& ftH & K Vdss Vgss Id I dp Pd Tch Tstg PW Si IOlis, duty cycle £1%

2SK1906

Contextual Info: O rd e rin g n u m b e r: EN 4 2 2 5 2SK1906 N o.4225 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. ■M icaless package facilitating m ounting.

2SK1902

Abstract: BR v7
Contextual Info: 2SK1902 its m • y mm. S illW y f V i'. unit ^ S i S ^ c S i S Absolute Maximum Ratings / T a = 2 5 °C F I'"!* V •V —XSH: y - F ■y - ^ m i ± F W VS2S& DC F V'-Y VflliJit (V^VX) Id PW = lOus, duty cycleS 1% Tc = 25°C I dp Pd Tch Tstg min I t E l e c t r i c a l Characteristics / Ta = 25°C

2SK1909

Contextual Info: Ordering number : EN4227 SANYO Semiconductors DATA SHEET 2SK1909 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions unit:mm 2093A [2SK1909] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 11.0 20.9 1.2 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching.