2SK168 Search Results

N channel Mosfet 15A 500V

Abstract: 2SK1681 F30Z50
Contextual Info: VXvU-X /\°7-M0SFET ¡ S jS a - f VX Series Power MOSFET 2SK1681 OUTLINE DIMENSIONS [F30Z50 500V 30A K 1H C is s ) ûVJv£l/\> • * v s î /ï ô v • a c 1o o v ^ A * x ^ '> ? y?mm • x - < y ? V^SCCDBŒ « • Æ të « RATINGS Absolute Maximum Ratings

2SK168

Abstract: VUME
Contextual Info: HITACHI 2SK168-SILICON N-CHANNEL JUNCTION FET VHF AMPLIFIER. MIXER, LOCAL OSCILLATOR 1 I 1 _ 1 1 . 1 1 l _ } IVixn. in rrirn JEDEC TO-92) • ABSOLUTE MAXIMUM RATINGS (Ta-25*C) [tern Symbol MAXIMUM CHANNEL POWER DISSIPATION CURVE

k168

Abstract: a1111 2SK1686 FP10W90 k1686
Contextual Info: h V X V 'J - X / \" 7 - M O S F E T HVX S eries Pow er M OSFET OUTLINE DIMENSIONS 2SK1686 Case •ITO-3P [U nit F P 10W 9 0 900V 15.0 ±o* 10A mm] 5.5 ±0-3 4 3.3 ±Q2 ^ S o 7 y D a te (C is s ) ô '/ j\ £ U o co d e PO £ E IA 3 N o. e i ' 22 •-KM386

2sk168

Contextual Info: H ITACH I 2SK168 S ILIC O N N -C H A N N E L JU N C T IO N F E T V H P A M P L IF IE R . M IX E R . L O C A L O S C IL L A T O R li « . , . - ¿ i . ,. u- 3> ^ f c 3\ ¿C ? ' - D- " V ‘, : JEOEC TO-92 • MAXIMUM CHAN N EL POWER DISSIPATION CURVE

Contextual Info: HVXv'J-X A^-MOSFET KVX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1684 FP5W90 900V 5 a ■ Æ fê ü R ATING S ■ S Ê 2 *H I^ 5 Ë Î& m A b s o lu te M axim um R a tin g s Item IS s Ÿ Sym bol M C o n d itio n s m R a tin g s îê . # e

Contextual Info: 2SK1685 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)900 V(BR)GSS (V)30 I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)14 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)65 Minimum Operating Temp (øC)

2SK1683

Abstract: FP3W90
Contextual Info: H V X v U -X A 7-M 0SFE T HVX SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK1683 FP3W90 900v 3 a • Æ fè ü R A T IN G S A b s o lu te M axim u m R a tin g s m i •IB-. # ' Symbol Ite m Ä « « R atings U n it S to r a g e T e m p e ra tu r e

2SK1681

Contextual Info: V X > U -X / f 7-M 0 SFET V X SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1681 F30Z50 500v 30a ■ R A TIN G S Absolute Maximum Ratings m g 4k ft C o n d itio n s IE '•j S ym bol Item m m R a tin g s m «e U n it S to r a g e T e m p e r a tu r e

k168

Abstract: K1683 2SK1683 FP3W90
Contextual Info: H V X y 'j - X /\0|7 — M O S FE T HVX Series Pow er MOSFET OUTLINE DIMENSIONS 2SK1683 Case : 1TO-3P [FP3W90] 15.0 ±0 3 900V 3A S n e # fli D a te co d e (Ciss) ò'/jv£U ì0 PEI 'â 2 - K K 383 ) s . 3 it E IA J No. Jfe 2.1 max •A C 2 4 0 V ^A m ^ y i K

mosfet ms 1307

Abstract: MS 1307 2SK1681 F30Z50 MOSFET 500V 15A
Contextual Info: V X V 'J-X /\°7 -M 0 S F E T VX Series Power MOSFET + i > A > x y > h i OUTLINE DIMENSIONS 2SK1681 [F30Z50] 500V 30A •A Ä S B Ciss ! tflC - Ö D A " - < 7 X B f A ^ § a A ''J \£ lA • A C l 0 0 V * A * f f lX '< • X 'T y y v i'Ä Ä f f lÜ E S

K1685

Abstract: 2SK1685 k168 FP7W90
Contextual Info: HVXy lJ —X /\°7 -M 0 S F E T HVX S eries Pow er MOSFET 2SK1685 [FP7W90] 900V 7A n n C is s f t V M l A •A C 2 4 0 V *A * X ^ • 7 .^ 0 -iy J K — ? • Æ tè Ü RATINGS Absolute Maximum Ratings m a ft & Symbol Item ssss Conditions T s tg Storage Temperature

2SK1685

Contextual Info: H V X 5 /U -X /17-M O SFET HVX SERIES POWER MOSFET W fê -+ > É III O U T L IN E D IM E N S IO N S 2SK1685 F P 7 W 9 0 900V 7A • Æ fê ü R A TIN G S ■ A b s o lu te Maximum R a t in g s 3« Item S 0k ss ySym bol ft- *, C o n d itio n s m R a tin g s

2SK168

Contextual Info: 2SK168 Silicon N-Channel Junction FET HITACHI Application V H F A m p lifie r , M ix e r , L o c a l o s c illa to r Outline T O -9 2 2 g HI 1 1. G ate 2. S ou rce 3. Drain 3 U[ 2 u 1 1013 2SK168 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

mosfet xb

Abstract: 2SK1686 AC240V FP10W90 KIF T6
Contextual Info: HVXv U —X / \ °7 - M 0 S F E T HVX S e r ie s Pow er MOSFET 2SK1686 OUTLINE DIMENSIONS F P 10W 9 0 9 0 0 V 10 A • A * S * (Ciss) ?t!C -t?□ i U 7 XB ^ IA •x-r " j j - y W ' i Atomic, •AC24ov?SA*©X'f' "jj-y-ynm y ? v ^ a ;© S Œ « i • - ÎV A - 5

2SK168

Abstract: Hitachi DSA002758
Contextual Info: 2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline 2SK168 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Gate to drain voltage VGDO –30 V Gate to source voltage VGSS –1 V Gate current IG 10

Contextual Info: HVXy IJ — X /\° 7 -M 0 S F E T HVX S e rie s P o w er M O SFET OUTLIN E DIMENSIONS 2SK1685 Case : 1TO-3P [FP7W90] [Unit ! mm] 900V 7A i m • a ti m c is s etfVâEJJttf'JÆU 9 X 4 'v ? y ? ? '< k iï üuv • A C 2 4 O V ^ A * C 0 ^ 'l' • 7 .^ •JÊ4&X

K1684

Abstract: 2SK1684 FP5W90
Contextual Info: H V X y 'J -X A °7-M 0S FE T HVX S eries Power MOSFET 2SK1684 • flflN -JÄ E I OUTLINE DIMENSIONS [FP5W90] 900V 5A • A * S » Ciss m Æ H. y ? y 7 ? '( k tm *\ •7.>f •AC240V*A* 7.-< y • x - r y ? V ^ Ä ä f fiS E S ä S e ^ v n - ? ■ Æ të fl

Contextual Info: H V X v U -X A7 -MOSFET H V X SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1686 FP10W 90 900v10a ■ R A TIN G S ■ ÎÊ 2 \H I^ : ÎÜ Î& A b s o lu te M axim um R a tin g s « Ite m g y- m & Sym b ol # s C o n d itio n s » R a tin g s t

Contextual Info: H V X '> 'J - X ; t 7 - M 0 S F E T H V X SERIES POWER MOSFET N-5LjP ^ l / ,X > A > 7 .^ > h M • O U T L IN E D IM E N S IO N S 2SK1683 F P 3 W 9 0 900v 3a ■ Æ fêSt RATINGS A b s o lu te M axim um R a tin g s m Ite m s IE -§• Sym bol fk # C o n d itio n s

Contextual Info: 2SK1683 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)900 V(BR)GSS (V)30 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)6.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)

2SK1686

Abstract: AC240V FP10W90
Contextual Info: H V X v'J-X /\°7 — MOSFET HVX Series Power MOSFET OUTLINE DIMENSIONS 2SK1686 FP10W90 900V 10A •A *S* (Ciss) tf/j\SLïo ?t!C -tf□ I U 7 X B e * V f f iÖ W • A C 2 • Æ fê ü ^ IA J ^ U 4 " j j - y y n n RATINGS Absolute Maximum Ratings M SffiSK

2SK1681

Abstract: usim diode F30Z50 2sk16
Contextual Info: V X v 'J - X /t7 -M 0 S F E T VX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1681 F 30Z 50 500v 30 a ■ R A T IN G S A b s o lu te M a x im u m R a tin g s g m Ite m . IB- ':■# Symbol ; s M m i:- W : C o n d itio n s # m R a tin g s —5 5 ~ 1 5 0

2SK168

Abstract: transistor 2sk168 DSA003646
Contextual Info: 2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 2 1. Gate 2. Source 3. Drain 3 2 1 2SK168 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage VGDO –30 V Gate to source voltage

K1684

Abstract: K168 2SK1684 FP5W90
Contextual Info: HVXv U —X /\°7 -M 0 S F E T HVX S e rie s P o w er M OSFET 2SK1684 • ^ v h Æ H I O U T L IN E D IM E N S IO N S FP5W 90] 900V 5A • a tm m . (ciss • ^ v s îîtô v • A C 2 4 0 V ^ A * ^ ^ v ? 1V ^ « B • X ■<u/ ^ > ^ E Ä © Ä E « ä S