2SD2391 Search Results

Contextual Info: Transistors SMD Type Product specification 2SD2391 Features Low saturation voltage. Collector-emitter voltage =60V. PC=2 W on 40 40 0.7mm ceramic board . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage

Contextual Info: 2SB1561 Datasheet PNP -2.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2.0A MPT3 Base Collector Emitter 2SB1561 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2391 3) Low VCE(sat) VCE(sat)= -0.35V(Max.)

2SD2391

Contextual Info: 2SD2391 h 7 > V 7s $ /Transistors 2SD2391 ï £ ° $ * ' > T J l s y i s - J - m N P N y V 3 > h ? Epitaxial Planar NPN Silicon Transistor Ei3€ ^ i f i lÜ £i/M ed iu m Power Amp. 1ii-îFi^tÆ 0/'Dim ensions Unit : mm 1) V C E O = 6 0 V T * 5 o 2) P c=2W T& 3o

Contextual Info: Medium Power Transistor 60V, 2A 2SD2391 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.

2SB1561

Abstract: 2SD2391 T100 60V2A
Contextual Info: Medium Power Transistor 60V, 2A 2SD2391 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.

2SD2391

Abstract: 2SB1561 T100
Contextual Info: 2SD2391 Transistors Medium Power Transistor 60V, 2A 2SD2391 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40x40×0.7mm ceramic board).

Contextual Info: 2SD2391 Datasheet NPN 2.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 2.0A MPT3 Base Collector Emitter 2SD2391 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1561 3) Low VCE(sat) VCE(sat)=0.35V(Max.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2391 TRANSISTOR NPN SOT-89-3L FEATURES Low VCE(sat) 1.BASE 123 2.COLLECTOR Marking: DT 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

transistor b228

Abstract: 2SB1561 2SD2391
Contextual Info: Transistors 2SB1561 2SD2391 94S-191-B228 (94S-380-D228) 294 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SD2391

Contextual Info: Transistors SMD Type Medium Power Transistor 2SD2391 Features Low saturation voltage. Collector-emitter voltage =60V. PC=2 W on 40 40 0.7mm ceramic board . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage

B-228

Abstract: 94S-380-D228 transistor b228 2SB1561 2SD2391
Contextual Info: Transistors 2SB1561 2SD2391 94S-191-B228 (94S-380-D228) 294

Contextual Info: Medium Power Transistor 60V, 2A 2SD2391 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.

Contextual Info: 2SB1561 2SD2391 Transistors Medium Power Transistor —60V, —2A I 2SB1561 •F e a tu re s 1) Low VcetMt). (Typ.—0.15V at Ic/I b = — 1V/—50mA) 2) Collector-emltter voltage = —60 V 3) Pc * 2 W (on 40 x 40 x 0.7 mm ceramic board). 4) Complements the 2SD2391.

Contextual Info: 2SD2391 h 7 > '/ ^ £ /Transistors 2SD2391 NPN * > U = l > b 7 > ' s Z * Epitaxial Planar NPN Silicon Transistor 4,^ l ^ i i |ÜÆ /Medium Power Amp. 1^ fi5\fîÈ0 /Dimensions Unit : mm 1) V c E O = 6 0 V T * 5 o 2) 3 U ' ? $ 1 * £ P c = 2 W T '* - 5 (40X40X0.7mm -fe 7 5

2SB1561

Abstract: 2SD2391 T100
Contextual Info: 2SB1561 Transistors Medium Power Transistor −60V, −2A 2SB1561 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage , typically VCE (sat) = −0.15V at IC / IB = −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40x40×0.7mm ceramic board).

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

100M200M

Abstract: 2SB1561 2SD2391 T100
Contextual Info: Medium Power Transistor −60V, −2A 2SB1561 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) = −0.15V at IC / IB = −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40400.7mm ceramic board).

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

rkm 33 transistor

Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Contextual Info: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178