2SD2248 Search Results

Contextual Info: 2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2248 Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max)

Contextual Info: TO SHIBA TENTATIVE 2SD2248 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S D 2 2 48 H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS Unit in mm FOR INDUCTIVE LOAD DRIVE • High DC Current Gain : hFE = 2000 Min. (VCE = 2V, Ie = lA) • Low Saturation Voltage

Contextual Info: SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TENTATIVE 2SD2248 DATA PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. INDUCTIVE LOAD SWITCHING APPLICATIONS. • High DC Current Gain : hpj;=2000 (Min.) (Vc{?=2V, I(;=1A) • Low Saturation Voltage

2SD2248

Contextual Info: TO SH IBA TENTATIVE 2SD2248 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2248 Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS FOR INDUCTIVE LOAD DRIVE 5.1 MAX. High DC Current Gain : hFE = 2000 Min. (VCE = 2 V, l£ = 1 A) Low Saturation Voltage

D2248

Abstract: darlington transistor with built-in temperature c 2SD2248
Contextual Info: 2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2248 Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max)

2SD2248

Contextual Info: TOSHIBA TENTATIVE 2SD2248 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2248 H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS Unit in mm FOR INDUCTIVE LOAD DRIVE 5.1 MAX. High DC Current Gain : hjpE = 2000 Min. (VCE = 2V, Ic = lA) 0.75MAX. Low Saturation Voltage

2SD2248

Contextual Info: TOSHIBA TENTATIVE 2SD2248 T O SH IB A TR A N SIST O R SILICON NPN EPITAXIA L TYPE 2SD2248 Unit in mm H A M M E R DRIVE, PULSE M O T O R DRIVE A PP LIC A T IO N S FOR IN D U CTIVE LO A D DRIVE 5.1 MAX. High DC Current Gain : hFE = 2000 Min. (VCE = 2 V, l£ = 1 A)

Contextual Info: TOSHIBA 2SD2248 TENTATIVE TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2SD2248 H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS U nit in mm FOR INDUCTIVE LOAD DRIVE 5.1 MAX. High DC Current Gain : hFE = 2000 Min. (VCE = 2V, IC = 1A) Low Saturation Voltage

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

2sc5088 horizontal transistors

Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Contextual Info: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.