2SC5950 Search Results

2SA2122

Abstract: 2SC5950
Contextual Info: Transistors 2SA2122 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 0.425 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10 2 0.2±0.1 1 (0.65) (0.65)  Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Features  Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic

2SC5950

Abstract: 2SC5950G 2SA2122G 2SC5632 2SA21
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic

2SA2122G

Abstract: 2SC5950G 2SA2122
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 3 5° 2.1±0.1 1.25±0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 3 5° 2.1±0.1 1.25±0.10

2SA2122G

Abstract: 2SC5950G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950G • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C

2SA21

Abstract: 2SA2122 2SC5950
Contextual Info: Transistors 2SC5950 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122 Unit: mm • Features 0.15+0.10 –0.05 0.425 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10 2 0.2±0.1 1 (0.65) (0.65)  Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950G • Features  Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10

2SA2122

Abstract: 2SC5950 2SA21
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10

2SA2122

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10

2SC5950

Abstract: 2SA2122G 2SC5632 2SC5950G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the