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    2SC5171 Search Results

    2SC5171 Datasheets (11)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC5171
    Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: driver; Part Number: 2SA1930 Original PDF 112.3KB 4
    2SC5171
    Unknown Scan PDF 146.75KB 2
    2SC5171
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 45.31KB 1
    2SC5171
    Unknown Japanese Transistor Cross References (2S) Scan PDF 32.81KB 1
    2SC5171
    Toshiba Silicon NPN transistor for power amplifier and driver stage amplifier applications Scan PDF 170.84KB 3
    2SC5171,MATUDQ(J
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 180V TO220-3 Original PDF 141.69KB
    2SC5171,ONKQ(J
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 180V TO220-3 Original PDF 141.69KB
    2SC5171,Q(J
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 180V TO220-3 Original PDF 141.69KB
    2SC5171(LBS2MATQ,M
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 180V TO220-3 Original PDF 141.69KB
    2SC5171(ONK,Q,M)
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 180V TO220-3 Original PDF 141.69KB
    2SC5171(Q,M)
    Toshiba 2SC5171 - TRANS NPN 180V 2A 2-10R1A Original PDF 121.45KB 4
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    2SC5171 Price and Stock

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    Sirectifier 2SC5171A6

    Transistor: NPN; bipolar; 180V; 2A; TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 2SC5171A6 1
    • 1 $1.33
    • 10 $0.75
    • 100 $0.47
    • 1000 $0.35
    • 10000 $0.35
    Get Quote

    Sirectifier 2SC5171A2

    Transistor: NPN; bipolar; 180V; 2A; TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 2SC5171A2 1
    • 1 $1.31
    • 10 $0.74
    • 100 $0.46
    • 1000 $0.34
    • 10000 $0.34
    Get Quote

    Sirectifier 2SC5171A1

    Transistor: NPN; bipolar; 180V; 2A; TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 2SC5171A1 1
    • 1 $1.31
    • 10 $0.74
    • 100 $0.46
    • 1000 $0.34
    • 10000 $0.34
    Get Quote

    Toshiba America Electronic Components 2SC5171(Q,M)

    Trans GP BJT NPN 180V 2A 3Pin3Tab TO220NIS (Alt: 2SC5171(Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik 2SC5171(Q,M) 26 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    Toshiba America Electronic Components 2SC5171,Q(J

    Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian 2SC5171,Q(J 18,497
    • 1 -
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    2SC5171 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    c5171

    Abstract: transistor c5171 2SC5171 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 transistor equivalent 2SA1930
    Contextual Info: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics


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    2sc51712sa19302-10r1ac5171+4transistor c51712sa1930 transistor equivalent2sa1930 2sc51712sc5171 transistor equivalent PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SC5171 TO – 220F TRANSISTOR NPN 1. BASE FEATURES z High Transition Frequency z Power Amplifier Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    o-220f2sc5171100ma300ma PDF

    2sc5171

    Contextual Info: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics


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    2sc51712sa19302-10r1a PDF

    A1930

    Abstract: 2SA1930 2sc5171 2sa1930 2SC5171
    Contextual Info: 2SA1930 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1930 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。fT = 200 MHz 標準 • 2SC5171 とコンプリメンタリになります。


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    2sa19302sc5171sc-672-10r1a+320070701-jaa19302sa1930 2sc5171 PDF

    2SC1930

    Contextual Info: 2SC5171 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • • High Transition Frequency : P]i = 200MHz Typ. Complementary to 2SC1930 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan
    2sc5171200mhz2sc1930 PDF

    2SA1930 2sc5171

    Abstract: transistor 2sc5171 2SC5171 2SA1930
    Contextual Info: TOSHIBA 2SC5171 2 S C 5 1 71 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS r • • High Transition Frequency : fp = 200MHz Typ. Complementary to 2SA1930 M A X IM U M RATINGS (Ta = 25°C)


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    2sc5171200mhz2sa19302-10r1a+22sa1930 2sc5171transistor 2sc5171 PDF

    transistor c5171

    Abstract: C5171 2SC5171 transistor equivalent 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 2SA1930 2sc517
    Contextual Info: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


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    2sc51712sa19302-10r1atransistor c5171+5c51712sc5171 transistor equivalent2sa1930 transistor equivalent2sa1930 2sc51712sc517 PDF

    A1930

    Abstract: transistor a1930 2SA1930 2SA1930 2sc5171 toshiba A1930 transistor 2SA1930
    Contextual Info: 2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SC5171 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


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    2sa19302sc5171sc-672-10r1a+5a1930transistor a19302sa1930 2sc5171toshiba a1930transistor 2sa1930 PDF

    Contextual Info: 2SA1930 T O SH IB A 2 S A 1 930 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ± 0 .3 • • High Transition Frequency : Pp = 200MHz Typ. Complementary to 2SC5171 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    2sa1930200mhz2sc51712-10r1a+1-180v PDF

    2SA1930 2sc5171

    Abstract: 2SC5171 2SA1930
    Contextual Info: TO SH IBA 2SC5171 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2 S C 5 1 71 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ±0.3 r • • 1.1 cn ro o 1.1 UNIT 0.75 ±0.15 V 2.54 ± 0.25 2.54±0.25 V V A 1 2 3 ic A :B 1. BASE


    OCR Scan
    2sc5171200mhz2sa19302-10r1a+2--180v2sa1930 2sc5171 PDF

    2sa1930

    Abstract: 2SA1930 2sc5171 2SC5171
    Contextual Info: TOSHIBA 2SA1930 2 S A 1 930 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS r • • High Transition Frequency : fp = 200MHz Typ. Complementary to 2SC5171 2 '^ "<v>0 o M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    2sa1930200mhz2sc51712-10r1a+2-180v2sa1930 2sc5171 PDF

    Contextual Info: 2SC5171 T O SH IB A TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2 S C 5 1 71 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ± 0 .3 • • High Transition Frequency : Pp = 200MHz Typ. Complementary to 2SA1930 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    2sc5171200mhz2sa19302-10r1a PDF

    c5171

    Abstract: 2SC5171 2SA1930 2sc5171 2-10R1A 2SA1930
    Contextual Info: 2SC5171 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5171 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。fT = 200 MHz 標準 • 2SA1930 とコンプリメンタリになります。


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    2sc51712sa1930sc-672-10r1a+320070701-jac51712sa1930 2sc5171 PDF

    Contextual Info: , Line. J.E.IIS.U C7 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1930 Silicon PNP Power Transistor DESCRIPTION • High Transition Frenquency : fr=200MHz(Typ.) • Complementary to 2SC5171


    Original
    2sa1930200mhz2sc5171o-220f+1-10ma PDF

    A1930

    Abstract: transistor a1930 2SA1930 2sa1930 transistor equivalent toshiba A1930 2SA1930 2sc5171 2SC5171
    Contextual Info: 2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SC5171 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


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    2sa19302sc5171sc-672-10r1a+5a1930transistor a19302sa1930 transistor equivalenttoshiba a19302sa1930 2sc5171 PDF

    2SC4793 2sa1837

    Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
    Contextual Info: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688


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    2sc1627a2sa817a2sc22352sa965+162sc36652sa14252sc51742sa19322sc34232sa13602sc4793 2sa1837100 amp npn darlington power transistors2sc5200, 2sa194310 amp npn darlington power transistors2sc5200, 2sa1943, 2sc51982sc4684 datasheets2sa1930 transistor equivalent2sc52002sb906-y2sc3303 PDF

    2SA1930 2sc5171

    Abstract: 2SC5171 transistor 2sc5171 2SA1930
    Contextual Info: TO SH IBA 2SC5171 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2 S C 5 1 71 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS r • • High Transition Frequency : fr[' = 200MHz Typ. Complementary to 2SA1930 MAXIMUM RATINGS (Tc = 25°C)


    OCR Scan
    2sc5171200mhz2sa19302-10r1a+3--180v2sa1930 2sc5171transistor 2sc5171 PDF

    2SA1930 2sc5171

    Abstract: 2SA1930 2SC5171
    Contextual Info: TO SH IBA 2SA1930 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 930 POWER AMPLIFIER APPLICATIONS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS High Transition Frequency : fp = 200 MHz Typ. • Complementary to 2SC5171 ± 0.2 ÍY^ o 2.7±Q 2 of 3.9


    OCR Scan
    2sa19302sc51712sa1930 2sc5171 PDF

    Contextual Info: TOSHIBA 2SC5171 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 1 <;r s 1 7 1 MT WÊÊÊF •M ■ Unit in mm POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • • 10 + 0.3 , f 3.2 ± 0 . 2 2.7±02 High Transition Frequency : fr = 200MHz Typ.


    OCR Scan
    2sc5171200mhz2sa19302-10r1a PDF

    2SA1930

    Abstract: 2SC5171 VQE 11E 2SA19 transistor 2SA1930
    Contextual Info: 2SA1930 TOSHIBA 2 S A 1 930 TO S H IB A TRANSISTOR POWER AM PLIFIER APPLICATIO NS SILICON PNP E PITAX IAL TYPE Unit in mm DRIVER STAGE AM PLIFIER APPLICATIO NS 10 ±0.3 -5 y < High Transition Frequency : fp = 200 MHz Typ. Complementary to 2SC5171 o


    OCR Scan
    2sa19302sc5171vqe 11e2sa19+1transistor 2sa1930 PDF

    transistor c5171

    Abstract: c5171 2sc5171
    Contextual Info: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


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    2sc51712sa19302-10r1atransistor c5171+1c5171 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    sce0004lttc41162sc4118tta1586+162sa15882sc41172sa15872sc52332sc47382sa1832gt30f131gt30f124tk18a60vsmd m5 transistor 6-pinsmd transistor h2a npngt50n322marking smd pnp transistor h2agt30j12430f124tpcp8r01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    scj0004rsc-432sc18152sc732tm+142sc19592sa10152sc22402sa970igbt gt30f124igbt gt30j124gt30f124gt30j124gt50n322tk25e06k3tpcp8r01tk12a10k3gt30g1242sk3075 PDF

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


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    bce0016d2sc5200, 2sa19432sa1941 equivalent2sc5353 equivalent+72sc5198 equivalentamplifier circuit using 2sa1943 and 2sc52002sc2383 equivalenttpcp8l012sa1962 equivalent2sc4793 2sa18372sa1013 equivalent PDF