2SC509 Search Results

Contextual Info: 2SC5096 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r Unit in mm V H F — UHF B A N D L O W N O ISE A M P L IF IE R A PPLICA TIO N S. • • Low Noise Figure, High Gain. N F = 1.8dB, |S2le |2= 7.5dB f=2GHz M A X IM U M R A T IN G S (Ta = 25°C)

2SC5092

Contextual Info: 2SC5092 SILIC0N NPN EPITAXIAL PLANAR T Y P E TRANSISTOR TENTATIVE DATA U nit in mm V H F - U H F BAN D L O W NOISE A M PLIFIER APPLICATIONS. • • Low Noise Figure, High Gain. N F ^ l.ld B , |S2iel2 —13dB f=lG H z + Q2 2.9- Q 3 M A X IM U M RATINGS (Ta = 25°C)

LT 7706

Abstract: LT 7207
Contextual Info: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S 2 1 e|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)

2SA1907

Abstract: 2SC5099
Contextual Info: AOK Product Specification AOK Semiconductor Silicon PNP Power Transistors 2SA1907 DESCRIPTION • With TO-3PML package • Complement to type 2SC5099 APPLICATIONS • Audio and general purpose P IN N IN G PIN D E S C R IP TIO N 1 E m itter 2 C o lle cto r

2SA1907

Abstract: 2SC509 2SC5099
Contextual Info: Inchange Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5099 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol

2SA1907

Abstract: 2SC5099
Contextual Info: SavantIC Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors DESCRIPTION •With TO-3PML package ·Complement to type 2SC5099 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol

Contextual Info: T O SH IB A 2SC5095 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC509 5 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = 1.8dB, |S21el2 = 7.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: TOSHIBA 2SC5093 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC509 3 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = 1.8dB, |S 2 1 el2= 9.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: T O SH IB A 2SC5091 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC509 1 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 1 el2= 7dB f=lG H z Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TOSHIBA TENTATIVE 2SC5096F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le |2= 7.5dB f=2GHz Unit in mm 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: Reliability Tests Report Product Name: 2SC5096 Package Name: SSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

2SC509

Abstract: 2SA509 4687 transistor 2SA509-Y transistor 4687 2sa509 transistor 2SA509Y 2sc509 transistor RH-16 Produced by Perfect Crystal Device Technology
Contextual Info: 2/UD>PNPItr^2/?;i/»h5>5?^ PCTÄÄ ^ ^ L IC O N o & mantas m m o Audio Power Amplifier Applications b PNP EPITAXIAL TRANSISTOR (PCT PROCESS) Wl? v-y ^ 7 *-r; m 2SC509 i a v 7 V / v f y fri b -* -t ; 1 Watt Amplifier Applications Complementary to 2SC509 M ±

Contextual Info: TO SHIBA 2SC5091FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ?<;r i n Q i F T Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF = l.ld B , |S 2 ie l 2 = 7dB f=lG H z 1.2 ±0.05 M A X IM U M RATINGS (Ta = 25°C)

IC marking 2b

Abstract: 2SC5097 ic 0744
Contextual Info: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2 .9 • Low Noise Figure, High Gain. • NF=1.8dB, |S2lel2—lOdB f=2GHz - 0.3 -fr M A X IM U M RATINGS (Ta = 25°C)

working OF IC 723

Abstract: 2SC5098 IC 7420
Contextual Info: TO SH IBA 2SC5098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5098 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Low Noise Figure, High Gain. • N F=1.8dB, |S2lel2—lOdB f=2GHz 1.25 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

2SC5096FT

Contextual Info: TOSHIBA 2SC5096FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ± 0 .0 5 Low Noise Figure, High Gain. NF=1.8dB, |S2iel2= 7.5dB f=2GHz 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)

2SC5091FT

Abstract: toshiba M7
Contextual Info: 2SC5091FT TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F=l.ldB, |S2iel2= 7dB f=lGHz 1.2 ± 0 .0 5 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)

2SC5091

Abstract: 4407 ic data DSA0016975
Contextual Info: 2SC5091 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

ic 7472

Abstract: ic 1496 2SC5090 416 J50
Contextual Info: 2SC5090 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5090 ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項 目

Contextual Info: 2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

Contextual Info: 2SC5095 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

TRANSISTOR A743

Contextual Info: 2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF～UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC5091

Contextual Info: TO SH IBA 2SC5091 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.l d B , |S2lel2= 7dB f= lG H z Unit in mm 1.6 ± 0.2 ,0.8 ±0.1, r— :— 1 MAXIMUM RATINGS (Ta = 25°C)

TOSHIBA D 799

Abstract: 2SC5097
Contextual Info: TO SH IBA 2SC5097 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F - U H F BAND LO W NOISE A M PLIFIER APPLICATIONS Unit in mm + 0.2 • Low Noise Figure, High Gain. • N F = 1 .8 d B , |S 2 lel 2 —lOdB 2 .9 -0 .3 -fr -3 f=2G H z M A X IM U M RATINGS (Ta = 25°C)