2SC375 Search Results

2SC3757

Abstract: XP5A554
Contextual Info: Composite Transistors XP5A554 Silicon NPN epitaxial planer transistor Unit: mm For high speed switching ● 1 6 2 5 3 4 2SC3757 x 2 elements • Absolute Maximum Ratings Parameter Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage

2SA1738

Abstract: 2SC3757 XP4654
Contextual Info: Composite Transistors XP4654 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For high speed switching 1 6 2 5 3 4 0 to 0.1 2SC3757+2SA1738 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element

2SC3752

Abstract: 3020h CE85
Contextual Info: Ordering num ber:EN 1971A 2SC3752 No.1971A NPN Triple Diffused Planar Type Silicon Transistor S w i t c h i n g Re g u l a t o r A p p l i c a t i o n s Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO . Adoption of MBIT process

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1738 Silicon PNP epitaxial planar type For high speed switching Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • High speed switching (Pair with 2SC3757)

2SC3752

Abstract: transistor 2SC3752
Contextual Info: Ordering number:EN1971A NPN Triple Diffused Planar Silicon Transistor 2SC3752 800V/3A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.

2SC3757

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3757 Silicon NPN epitaxial planar type For high-speed switching Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05 Th an W is k y Th e a pro ou

2SC3757

Abstract: XP05554
Contextual Info: Composite Transistors XP05554 Silicon NPN epitaxial planer transistor Unit: mm For high speed switching ● 1 6 2 5 3 4 +0.05 2SC3757 x 2 elements 0 to 0.1 ● 0.12 –0.02 • Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 ● For high speed switching.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3757 Silicon NPN epitaxial planar type For high-speed switching Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 1.50+0.25 –0.05

transistor marking 2y

Contextual Info: Transistor 2SC3757 Silicon NPN epitaxial planer type For high speed switching Unit: mm +0.2 2.8 –0.3 Ta=25˚C Ratings Unit Collector to base voltage VCBO 40 V VCES 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 300 mA Collector current

Contextual Info: 2SC3752 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.1k I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3752

Abstract: npn 10a 800v GDB013D
Contextual Info: Ordering number: EN 1971A 2SC3752 N0.1971A I NPN Triple Diffused Planar Silicon Transistor SAiYOi 800V/3A Switching Regulator Applications Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO . Adoption of MBIT process . Micaless package facilitating mounting

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1738 Silicon PNP epitaxial planar type For high speed switching Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • High speed switching (Pair with 2SC3757)

2SC3757

Abstract: XP01554 XP1554
Contextual Info: Composite Transistors XP01554 XP1554 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For high speed switching 2.1±0.1 2.0±0.1 2 5 3 4 0.9± 0.1 • Basic Part Number of Element 2SC3757 x 2 elements 0 to 0.1 ● 0.7±0.1 +0.05 ● 1 0.425 ■ Absolute Maximum Ratings

2SC3757

Abstract: XP1554
Contextual Info: Composite Transistors XP1554 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For high speed switching 2.1±0.1 2.0±0.1 2 5 3 4 0.9± 0.1 • Basic Part Number of Element 2SC3757 x 2 elements 0 to 0.1 ● 0.7±0.1 +0.05 ● 1 0.425 ■ Absolute Maximum Ratings

2SC3750

Contextual Info: SavantIC Semiconductor Product Specification 2SC3750 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High breakdown voltage and high reliability. ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·500V/5A switching regulator applications

2SC3757

Abstract: XP05554
Contextual Info: Composite Transistors XP05554 Silicon NPN epitaxial planer transistor Unit: mm For high speed switching ● 1 6 2 5 3 4 +0.05 2SC3757 x 2 elements 0 to 0.1 ● 0.12 –0.02 • Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 ● For high speed switching.

2SC2724

Abstract: 2SC3346 2SD4028 2SC2258 2SC400 2sc2636 2SD1111 4017 2SC3075 2SC3460
Contextual Info: - m ¡g T y p e No. 2SC 3999 it S' 2SC 4000 2SC 400 1 ^ 0 a 0 a 0a 2SC 4002 ^ = 2SC 4003 J ^ = n fâ T 2SC 4004 S H SANYO 2SC4218 & 2SC3751 U B H TOSHIBA NEC B HITACHI ±L s * ± a FUJITSU tä T MATSUSHITA h m M ITSUBISHI □ — A ROHM 2SC1473 2SC2551 2SC3672

2SC3756

Contextual Info: Inchange Semiconductor Product Specification 2SC3756 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·For TV horizontal deflection output applications PINNING PIN DESCRIPTION

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3757 Silicon NPN epitaxial planar type For high-speed switching Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low collector-emitter saturation voltage VCE(sat)

2SA1738

Abstract: 2SC3757
Contextual Info: Transistors 2SA1738 Silicon PNP epitaxial planar type For high speed switching Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • High speed switching Pair with 2SC3757 • Low collector-emitter saturation voltage VCE(sat)

2SC3757

Contextual Info: Transistors 2SC3757 Silicon NPN epitaxial planar type For high-speed switching Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low collector-emitter saturation voltage VCE sat • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

2sc3751

Abstract: ITR05871 ITR05872 ITR05873 ITR05874 ITR05875 ITR05876 ITR05877 ITR05878
Contextual Info: Ordering number : ENN1970B 2SC3751 NPN Triple Diffused Planar Silicon Transistor 2SC3751 800V / 1.5A Switching Regulator Applications Features • • • • High breakdown voltage and high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process.

2SC4290A

Abstract: C 4927 2SD2356 2SC4289 2SD1407 4894 4902 2SC3997 2SC4289A 2SC4911K
Contextual Info: - 202 - S € Type No. 4t £ Manuf. -M H SANYO B TOSHIBA m NEC B AL HITACHI « ± a F U JIT S U fâ T MATSUSHITA 2SC3052 2SC 4894 të T 2SC4453 2SC343Î 2SC 4895 □—A 2SD1828 2SD1407 2SC 4896 S tL 2SC 4897 B tL 2SC3997 2SC4290A 2SC 4898 fâ T 2SC3750 2SC3310

2SC3756

Contextual Info: SavantIC Semiconductor Product Specification 2SC3756 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·For TV horizontal deflection output applications PINNING PIN DESCRIPTION