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    2SC2529 Search Results

    2SC2529 Datasheets (7)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC2529
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 77.76KB 1
    2SC2529
    Unknown Japanese Transistor Cross References (2S) Scan PDF 39.98KB 1
    2SC2529
    Unknown Cross Reference Datasheet Scan PDF 39.95KB 1
    2SC2529
    Unknown Transistor Substitution Data Book 1993 Scan PDF 47.66KB 1
    2SC2529
    Unknown The Japanese Transistor Manual 1981 Scan PDF 107.72KB 2
    2SC2529
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 131.71KB 1
    2SC2529
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 44.6KB 1

    2SC2529 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC2529

    Abstract: 2SA1079
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1079 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2529 APPLICATIONS


    Original
    2SA1079 -160V 2SC2529 -160V; 10MHz 2SC2529 2SA1079 PDF

    TEA 1091

    Abstract: 2Sc2565 2sc2550 2SC2525 TRANSISTOR 2sc2526 2SC2530 25C2564 2SC2526 cc 1094 DUQN ic tea 1090
    Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan
    2SC2564 2SC2565 100Hz, TEA 1091 2sc2550 2SC2525 TRANSISTOR 2sc2526 2SC2530 25C2564 2SC2526 cc 1094 DUQN ic tea 1090 PDF

    Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1079 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo=-160V(Min.) • Good Linearity of hFE • Wide Area of Safe Operation


    Original
    2SA1079 -160V 2SC2529 O-220C 10MHz PDF

    2sa1046

    Abstract: 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375
    Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1001 -130 -4.5 -8A 80W(Tc=25ºC) 150 100 -5 -500 40* 350


    Original
    2SA1001 2SA1002 2SA1003 1602SA1004 2SA1005 2SA1006 2SA1006A 2SA1006B 2SA1007 2SA1096 2sa1046 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF