2SC2497 Search Results

EAt-11

Abstract: 2SA1096 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SA1096, 2SA1096A 2SA1096, 2SA1096A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SC2497, 2SC2497A • Features • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S C 2497, 2S C 2497A

2SC2491

Abstract: 2SC319B 2SC748 2sc2550 2SC306 2SC1740 2sc2061 2SC2926 2SC1398 2SC1687
Contextual Info: 84 - S S! tt T y p e No. 2SC 292 « Manuf. = $ SANYO Ü S TOSHIBA t b B NEC ÍL HITACHI Ä ± iï FUJITSU fâ T MATSUSHITA 'J—— 2SC2497 2SC 293 ' J —— 2SC2497A 2SC 294 S S 2 SC2497A 2SC 295 a a S * h m MITSUBISHI □ — A ROHM 2 SC2497A 2SC 296 |_±iS

2SC2497A

Contextual Info: Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC2497 and 2SC2497A 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector to emitter voltage

2SA1096

Abstract: 2SA1096A Jmnic
Contextual Info: JMnic Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2497/2SC2497A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

c2497

Abstract: 2SC2497A 2SA1096 2SA1096A 2SC2497 c2497a
Contextual Info: Power Transistors 2S C 2497, 2S C 24 97 A 2SC2497, 2SC2497A Silicon NPN Epitaxial Planar Type A F Pow er Amplifier C om plem entary Pair with 2 S A 1 0 9 6 , 2 S A 1 0 9 6 A • Features • High co liector-em itter voltage V c e o • TO-126 package, no insulator n eeded w hen fixing to a h e at sink

Contextual Info: 2SC2497 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)70 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.50 h(FE) Max. Current gain.220

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA1096

Abstract: 2SA1096A 2SA109
Contextual Info: SavantIC Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open

2SC1096A

Abstract: 2SC2497A 2SA1096 2SC2497
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096, 2SC1096A Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA1096A

Abstract: 2SC2497A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1096A DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -60V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497A APPLICATIONS ·Designed for low-frequency power amplification

2SC2497

Abstract: 2SC2497A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2497 2SC2497A Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1096/A ·High collector to emitter voltage VCEO APPLICATIONS ·For low-frequency power amplification PINNING

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc

2SC2497

Abstract: 2SC2497A
Contextual Info: Inchange Semiconductor Product Specification 2SC2497 2SC2497A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1096/A ・High collector to emitter voltage VCEO APPLICATIONS ・For low-frequency power amplification

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A 2SA109
Contextual Info: Power Transistors 2 SA 1 0 9 6 , 2 S A 1096A 2SA1096, 2SA1096A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SC2497, 2SC2497A • Features • 5W output in com plem entary pair with 2SC2497, 2SC2497A • TO-126 package, no insulator n eeded when fixing to a heat sink

c2497

Abstract: 2SC2497 2SC2497A 2SA1096 2SA1096A
Contextual Info: P o w e r T ra n s is to rs 2S C 2497, 2SC2497A 2SC2497, 2 S C 2 4 9 7 A S ilico n NPN E p ita xia l P la n a r Type P ackage D im ensions AF Pow er A m plifier C om plem entary P air w ith 2 S A 1 0 9 6 . 2S A 1096A timi : no ai­ • Features • High co llccto r-em itter voltage Vcso

2SC2497

Abstract: 2SC1497 2SC2497A 2SA1096 2SA1096A
Contextual Info: Power T ransistors 2SC2497, 2SC2497A 2SC2497, 2SC2497A Silicon NPN Epitaxial Planar Type Package Dimensions A F Power Amplifier Complementary Pair with 2SA1096, 2SA1096A • Features • High collector-em itter voltage V ceo • TO-126 package, no insulator needed w hen fixing to a h e a t sink

2SC1815

Abstract: 2SC5400 2sc5290 2sc458 nec 2SC923 2SC1675 2SC945 2SC3421 2SC520A 2SC519A
Contextual Info: - 90 - a s s T y p e No. M « Manuf. SANYO 3E TOSHIBA m b NEC B HITACHI ÍL * ± FUJITSU ffl fó T MATSUSHITA * 2SC 5 1 5A M 2 2SC2242 * 2S0 516 M $ 2SC3421 2SC2497 * * * 2SC 516A * 2: 2SC3421 2 SC2497A M ~S. 2SC2075 2SC 518 % 2 2SD718 2SD1270 * 2SC 518A %

2SC2497A

Abstract: 2SA1096 2SA1096A 2SC2497
Contextual Info: Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink

2SA1096

Abstract: 2SC2497
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1096 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -50V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497 APPLICATIONS ·Designed for low-frequency power amplification

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink

2SC2497

Abstract: 2SC1096A 2SC2497A 2SA1096
Contextual Info: Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096, 2SC1096A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open