2SAR543R Search Results

Contextual Info: Midium Power Transistors -50V / -3A 2SAR543R  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3  Features 1) Low saturation voltage V CE (sat) = -0.4V (Max.) (I C / I B= -2A / -100mA) (3) 2) High speed switching (1)

Contextual Info: 2SAR543R Datasheet PNP -3.0A -50V Middle Power Transistor lOutline Parameter Value VCEO IC -50 -3.0A TSMT3 Collector Base Emitter 2SAR543R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR543R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.)

Contextual Info: 2SCR543R Datasheet NPN 3.0A 50V Middle Power Transistor lOutline Parameter Value VCEO IC 50V 3.0A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR543R 3) Low VCE sat) VCE(sat)=0.35V(Max.) (IC/IB=2A/100mA)

2SC6144

Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.