2SAR533P Search Results

2SAR533P

Abstract: T100
Contextual Info: Midium Power Transistors -50V / -3A 2SAR533P  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) (1) 2) High speed switching  Applications

2SCR533P

Contextual Info: 2SCR533P 2SCR533PFRA Data Sheet NPN 3.0A 50V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC 50V 3.0A MPT3 Base Collector Emitter 2SCR533PFRA 2SCR533P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR533PFRA

Contextual Info: 2SAR533P / 2SAR533D Datasheet PNP -3.0A -50V Middle Power Transistor lOutline Parameter Value VCEO IC -50V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SAR533P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR533P / 2SCR533D

Contextual Info: 2SAR533P 2SAR533PFRA Data Sheet PNP -3.0A -50V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC -50V -3.0A MPT3 Base Collector Emitter 2SAR533PFRA 2SAR533P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR533PFRA

2SCR533P

Contextual Info: 2SCR533P Data Sheet NPN 3.0A 50V Middle Power Transistor lOutline Parameter Value VCEO IC 50V 3.0A MPT3 Base Collector Emitter 2SCR533P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR533P 3) Low VCE(sat) VCE(sat)=0.35V Max. (IC/IB=1A/50mA)

Contextual Info: 2SAR533P Data Sheet PNP -3.0A -50V Middle Power Transistor lOutline Parameter Value VCEO IC -50V -3.0A MPT3 Base Collector Emitter 2SAR533P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR533P 3) Low VCE(sat)

2SCR533P

Contextual Info: 2SCR533P / 2SCR533D Datasheet NPN 3.0A 50V Middle Power Transistor lOutline Parameter Value VCEO IC 50V 3.0A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SCR533P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR533P / 2SAR533D

Contextual Info: Midium Power Transistors -50V / -3A 2SAR533P  Dimensions (Unit : mm)  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) (1) (2) (3) 2) High speed switching

Contextual Info: 2SAR542P 2SAR542PFRA Data Sheet PNP -5.0A -30V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC -30V -5.0A MPT3 Base Collector Emitter 2SAR542PFRA 2SAR542P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR542PFRA

Contextual Info: 2SAR542P / 2SAR542D Datasheet PNP -5.0A -30V Middle Power Transistor lOutline Parameter Value VCEO IC -30V -5.0A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SAR542P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR542P / 2SCR542D

Contextual Info: 2SAR542P Data Sheet PNP -5.0A -30V Middle Power Transistor lOutline Parameter Value VCEO IC -30V -5.0A MPT3 Base Collector Emitter 2SAR542P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR542P 3) Low VCE(sat)

2SC6144

Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.