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2SA2154MFV Datasheets (8)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SA2154MFV	Toshiba	General Purpose Transistors (Single); Surface Mount Type: Y; Package: VESM; Number of Pins: 3; Comments: General-purpose; Part Number: 2SC6026MFV; DC Current Gain hFE, min: (min 120) (max 400); DC Current Gain hFE, max: (max -0.3); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -50)	Original	PDF	261.23KB	4
2SA2154MFV-GR	Toshiba	2SA2154 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal	Original	PDF	149.99KB	4
2SA2154MFVGR,L3F	Toshiba America Electronic Components	PNP TRANSISTOR VCEO-50V IC-0.15A	Original	PDF	169.7KB
2SA2154MFV-GR(TPL3)	Toshiba	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP VESM	Original	PDF		4
2SA2154MFV-GR(TPL3	Toshiba	2SA2154 - Bipolar Transistors -150mA -50V	Original	PDF	149.99KB	4
2SA2154MFV-Y	Toshiba	2SA2154 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal	Original	PDF	149.99KB	4
2SA2154MFV-Y,L3F	Toshiba America Electronic Components	PNP TRANSISTOR VCEO-50V IC-0.15A	Original	PDF	169.7KB
2SA2154MFV-Y(TPL3)	Toshiba	2SA2154 - Bipolar Transistors -150mA -50V	Original	PDF	149.99KB	4

2SA2154MFV Price and Stock

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Toshiba America Electronic Components


Toshiba America Electronic Components 2SA2154MFVGR,LXG(T Trans GP BJT PNP 50V 0.15A 150mW 3-Pin VESM T/R Automotive AEC-Q101
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SA2154MFVGR,LXG(T		8,000		89	1 - 10 - 100 $0.07 1000 $0.05 10000 $0.05	Buy Now
Toshiba America Electronic Components 2SA2154MFVGR,L3F(B 2SA2154MFVGR,L3F(B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SA2154MFVGR,L3F(B		7,800		2,084	1 - 10 - 100 - 1000 - 10000 $0.03	Buy Now
Quest Components	2SA2154MFVGR,L3F(B		6,240			1 $0.23 10 $0.23 100 $0.23 1000 $0.07 10000 $0.05	Buy Now
Toshiba America Electronic Components 2SA2154MFVGR,L3F(T Trans GP BJT PNP 50V 0.15A 150mW 3-Pin VESM T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SA2154MFVGR,L3F(T		4,434		100	1 - 10 - 100 $0.04 1000 $0.03 10000 $0.03	Buy Now
Newark ()	2SA2154MFVGR,L3F(T	Tape & Reel	7,900		100	1 - 10 - 100 $0.05 1000 $0.03 10000 $0.03	Buy Now
	2SA2154MFVGR,L3F(T	Cut Tape	7,900		5	1 - 10 $0.11 100 $0.05 1000 $0.03 10000 $0.03	Buy Now
Toshiba America Electronic Components 2SA2154MFV-Y,L3F(T Trans GP BJT PNP 50V 0.15A 150mW 3-Pin VESM T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SA2154MFV-Y,L3F(T		1,905		100	1 - 10 - 100 $0.03 1000 $0.03 10000 $0.03	Buy Now
Newark ()	2SA2154MFV-Y,L3F(T	Tape & Reel	56,000		8,000	1 - 10 - 100 - 1000 - 10000 $0.03	Buy Now
	2SA2154MFV-Y,L3F(T	Tape & Reel	7,700		100	1 - 10 - 100 $0.04 1000 $0.03 10000 $0.03	Buy Now
	2SA2154MFV-Y,L3F(T	Cut Tape	7,700		5	1 - 10 $0.11 100 $0.04 1000 $0.03 10000 $0.03	Buy Now
EBV Elektronik	2SA2154MFV-Y,L3F(T			19 Weeks	8,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SA2154MFVGR,L3F - Tape and Reel (Alt: 2SA2154MFVGR,L3F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SA2154MFVGR,L3F	Tape & Reel		21 Weeks, 3 Days	8,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	2SA2154MFVGR,L3F		2,624			1 $0.18 10 $0.11 100 $0.07 1000 $0.04 10000 $0.03	Buy Now
TTI	2SA2154MFVGR,L3F	Reel			8,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2SA2154MFV Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)	Original	2sc6026mfv 2sa2154mfv	PDF
2SA2154MFV Abstract: 2SC6026MFV Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity	Original	2sa2154mfv 2sc6026mfv	PDF
Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.4 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 1 0.8 ± 0.05 1.2 ± 0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2sa2154mfv 2sc6026mfv	PDF
2SA2154MFV Abstract: 2SC6026MFV Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)	Original	2sc6026mfv 2sa2154mfv	PDF
2SA2154MFV Abstract: 2SC6026MFV 2SA21 Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)	Original	2sc6026mfv 2sa2154mfv 2sa21	PDF
transistor marking hy Abstract: 2SA2154MFV 2SC6026MFV PCT 245 Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications High voltage and high current • Complementary to 2SA2154MFV • Lead (Pb) - free 1.2 ± 0.05 : hFE = 120~400 3 Unit Collector-base voltage	Original	2sc6026mfv 2sa2154mfv transistor marking hy pct 245	PDF
2SA2154MFV Abstract: 2SC6026MFV Contextual Info: 2SA2154MFV シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA2154MFV 単位 : mm 0.22±0.05 • 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) • 電流増幅率が高い。 • hFE リニアリティが優れています。	Original	2sa2154mfv 2sc6026mfv	PDF
2SA2154MFV Abstract: 2SC6026MFV Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)	Original	2sc6026mfv 2sa2154mfv	PDF
Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120 to 400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity	Original	2sa2154mfv 2sc6026mfv	PDF
2SA2154MFV Abstract: 2SC6026MFV Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity	Original	2sa2154mfv 2sc6026mfv	PDF
2SA2154MFV Abstract: 2SA21 2SC6026MFV 21l1A 2sc602 Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity	Original	2sa2154mfv 2sc6026mfv 2sa21 21l1a +12sc602	PDF
lm2804 Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.	Original	bce0030c s-167 bce0030d lm2804 +9marking 513 sod-323 land dpu 230 toshiba diode 1ss416 footprint 5252 f solar sot23 2fv tah8n401k ic sj 4558 zener diode reference guide rn4983	PDF
SSM3J307T Abstract: SSM3J328R SSM3J334R Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	200-ma bce0030d ssm3j307t ssm3j328r +1ssm3j334r	PDF
RTL8211E Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055 Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?	Original	isl10 isl11 rtl8211e isl6258a +888e1116r marvell 88e1116r isl6258 rtl8211 l6703 u9701 mcp79-b01 q7055	PDF

ISL6259 Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor Contextual Info: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01	Original	isl6259 transistor c3229 isl6258ahrtz transistor c6074 +6isl9504bcrz of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	sce0004l ttc4116 2sc4118 tta1586 +162sa1588 2sc4117 2sa1587 2sc5233 2sc4738 2sa1832 gt30f131 gt30f124 tk18a60v smd m5 transistor 6-pin smd transistor h2a npn gt50n322 marking smd pnp transistor h2a gt30j124 30f124 tpcp8r01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	scj0004r sc-43 2sc1815 2sc732tm +142sc1959 2sa1015 2sc2240 2sa970 igbt gt30f124 igbt gt30j124 gt30f124 gt30j124 gt50n322 tk25e06k3 tpcp8r01 tk12a10k3 gt30g124 2sk3075	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9sce0004k sc-43 2sc1815 700the +10gt30f124 tpcp8r01 gt30j124 japanese 2sc transistor 2010 smd transistor h2a smd marking 8l01 tk25e06k3 gt45f122 gt30g124 gt30f123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	sc-43 2sc1815 tps615 tps616 +11tps610 transistor bc 245 247y smd transistor h2a gt30g122 gt35j321 gt45f123 marking smd pnp transistor h2a gt45f122 gt45f122 series gt30f122	PDF
TPCA8030 Abstract: lm2804 TPCA8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 Contextual Info: 製品カタログ 2009-9 東芝半導体製品カタログ汎用小信号面実装対応素子（トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S	Original	tc7sz126fu sc-88a ot-353 bcj0052e +11bcj0052d tpca8030 lm2804 tpca8036 2sk2033 tpc8037 sj 88a diode tpca8028 tpc8a03 tc4w53fu ic sj 4558	PDF
MCP79MXT-B3 Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE	Original	isl10 isl11 mcp79mxt-b3 isl6258a +8ti c3931 u9701 rtl8211* reference design l6703 c3931 88e1116r fw643e cs4206a	PDF
2SA2154MFV Abstract: 2SC6026MFV Contextual Info: 2SC6026MFV シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC6026MFV 単位 : mm 0.22±0.05 • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) • 電流増幅率が高い。 • hFE リニアリティが優れています。	Original	2sc6026mfv 2sa2154mfv	PDF
RTL8211E Abstract: RTL8211CL reference Design MCP79 HS82117 rtl8211cl RTL8211 u9701 ISL6258A C5855 TC7SZ08AFEAPE Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97 MLB SCHEMATIC A 625211 PRODUCTION RELEASED DATE 08/29/08 ? REFERENCED FROM T18 08/27/2008 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM	Original	rtl8211e rtl8211cl reference design mcp79 hs82117 +6rtl8211cl rtl8211 u9701 isl6258a c5855 tc7sz08afeape	PDF
GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	scj0004o sc-43 2sc1815 2sc732tm +142sc1959 2sa1015 2sc2240 2sa970 gt45f122 tk13a60u gt30f123 2sk4207 gt30j124 igbt gt30f123 gt30f122 gt30g122 2sc5471 igbt gt30j124	PDF

2SA2154MFV Search Results

2SA2154MFV Datasheets (8)

2SA2154MFV Price and Stock

Toshiba America Electronic Components 2SA2154MFVGR,LXG(T

Toshiba America Electronic Components 2SA2154MFVGR,L3F(B

Toshiba America Electronic Components 2SA2154MFVGR,L3F(T

Toshiba America Electronic Components 2SA2154MFV-Y,L3F(T

Toshiba America Electronic Components 2SA2154MFVGR,L3F

2SA2154MFV Datasheets Context Search

2SA2154MFV

2SA2154MFV

2SA2154MFV

transistor marking hy

2SA2154MFV

2SA2154MFV

2SA2154MFV

2SA2154MFV

lm2804

SSM3J307T

RTL8211E

ISL6259

GT30F131

IGBT GT30F124

GT30F124

transistor bc 245

TPCA*8030

MCP79MXT-B3

2SA2154MFV

RTL8211E

GT45F122