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    2SA2154MFV Search Results

    2SA2154MFV Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SA2154MFV
    Toshiba General Purpose Transistors (Single); Surface Mount Type: Y; Package: VESM; Number of Pins: 3; Comments: General-purpose; Part Number: 2SC6026MFV; DC Current Gain hFE, min: (min 120) (max 400); DC Current Gain hFE, max: (max -0.3); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -50) Original PDF 261.23KB 4
    2SA2154MFV-GR
    Toshiba 2SA2154 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF 149.99KB 4
    2SA2154MFVGR,L3F
    Toshiba America Electronic Components PNP TRANSISTOR VCEO-50V IC-0.15A Original PDF 169.7KB
    2SA2154MFV-GR(TPL3)
    Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP VESM Original PDF 4
    2SA2154MFV-GR(TPL3
    Toshiba 2SA2154 - Bipolar Transistors -150mA -50V Original PDF 149.99KB 4
    2SA2154MFV-Y
    Toshiba 2SA2154 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF 149.99KB 4
    2SA2154MFV-Y,L3F
    Toshiba America Electronic Components PNP TRANSISTOR VCEO-50V IC-0.15A Original PDF 169.7KB
    2SA2154MFV-Y(TPL3)
    Toshiba 2SA2154 - Bipolar Transistors -150mA -50V Original PDF 149.99KB 4
    SF Impression Pixel

    2SA2154MFV Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components 2SA2154MFVGR,L3F

    TRANS PNP 50V 0.15A VESM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () 2SA2154MFVGR,L3F Digi-Reel 1,810 1
    • 1 $0.18
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    2SA2154MFVGR,L3F Cut Tape 1,810 1
    • 1 $0.18
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    Avnet Americas 2SA2154MFVGR,L3F Tape & Reel 21 Weeks, 3 Days 8,000
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    Mouser Electronics 2SA2154MFVGR,L3F 2,649
    • 1 $0.18
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    TTI 2SA2154MFVGR,L3F Reel 8,000
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    Toshiba America Electronic Components 2SA2154MFV-Y,L3F

    - Tape and Reel (Alt: 2SA2154MFV-Y,L3F)
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    Avnet Americas 2SA2154MFV-Y,L3F Tape & Reel 21 Weeks, 3 Days 8,000
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    Mouser Electronics 2SA2154MFV-Y,L3F 7,290
    • 1 $0.18
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    TTI 2SA2154MFV-Y,L3F Reel 8,000
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    Toshiba America Electronic Components 2SA2154MFV-Y,L3F(T

    TRANSISTOR, PNP, 50V, 0.15A, SOT-723;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark () 2SA2154MFV-Y,L3F(T Tape & Reel 56,000 8,000
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    2SA2154MFV-Y,L3F(T Cut Tape 7,700 5
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    2SA2154MFV-Y,L3F(T Tape & Reel 7,700 100
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    Verical 2SA2154MFV-Y,L3F(T 1,905 124
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    EBV Elektronik 2SA2154MFV-Y,L3F(T 19 Weeks 8,000
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    Toshiba America Electronic Components 2SA2154MFVGR,L3F(T

    TRANSISTOR, PNP, 50V, 0.15A, SOT-723;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark () 2SA2154MFVGR,L3F(T Cut Tape 7,900 5
    • 1 -
    • 10 $0.15
    • 100 $0.07
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    • 10000 $0.03
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    2SA2154MFVGR,L3F(T Tape & Reel 7,900 100
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    Verical 2SA2154MFVGR,L3F(T 4,434 124
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    Toshiba America Electronic Components 2SA2154MFVGR,LXG(T

    Trans GP BJT PNP 50V 0.15A 150mW 3-Pin VESM T/R Automotive AEC-Q101
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SA2154MFVGR,LXG(T 8,000 111
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    2SA2154MFV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


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    2SC6026MFV 2SA2154MFV PDF

    2SA2154MFV

    Abstract: 2SC6026MFV
    Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


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    2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV PDF

    Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.4 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 1 0.8 ± 0.05 1.2 ± 0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)


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    2SA2154MFV 2SC6026MFV PDF

    2SA2154MFV

    Abstract: 2SC6026MFV
    Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


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    2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV PDF

    2SA2154MFV

    Abstract: 2SC6026MFV 2SA21
    Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


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    2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV 2SA21 PDF

    transistor marking hy

    Abstract: 2SA2154MFV 2SC6026MFV PCT 245
    Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications High voltage and high current • Complementary to 2SA2154MFV • Lead (Pb) - free 1.2 ± 0.05 : hFE = 120~400 3 Unit Collector-base voltage


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    2SC6026MFV 2SA2154MFV transistor marking hy 2SA2154MFV 2SC6026MFV PCT 245 PDF

    2SA2154MFV

    Abstract: 2SC6026MFV
    Contextual Info: 2SA2154MFV シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA2154MFV 単位 : mm 0.22±0.05 • 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) • 電流増幅率が高い。 • hFE リニアリティが優れています。


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    2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV PDF

    2SA2154MFV

    Abstract: 2SC6026MFV
    Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


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    2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV PDF

    Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120 to 400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


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    2SA2154MFV 2SC6026MFV PDF

    2SA2154MFV

    Abstract: 2SC6026MFV
    Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


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    2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV PDF

    2SA2154MFV

    Abstract: 2SA21 2SC6026MFV 21l1A 2sc602
    Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


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    2SA2154MFV 2SC6026MFV 2SA2154MFV 2SA21 2SC6026MFV 21l1A 2sc602 PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    RTL8211E

    Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
    Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?


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    ISL10 ISL11 RTL8211E ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055 PDF

    ISL6259

    Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
    Contextual Info: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01


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    PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 (トランジスタダイオード、セルパック) SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


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    TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 PDF

    MCP79MXT-B3

    Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A
    Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE


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    ISL10 ISL11 MCP79MXT-B3 ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A PDF

    2SA2154MFV

    Abstract: 2SC6026MFV
    Contextual Info: 2SC6026MFV シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6026MFV 単位 : mm 0.22±0.05 • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) • 電流増幅率が高い。 • hFE リニアリティが優れています。


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    2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV PDF

    RTL8211E

    Abstract: RTL8211CL reference Design MCP79 HS82117 rtl8211cl RTL8211 u9701 ISL6258A C5855 TC7SZ08AFEAPE
    Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97 MLB SCHEMATIC A 625211 PRODUCTION RELEASED DATE 08/29/08 ? REFERENCED FROM T18 08/27/2008 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


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    PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 PDF