2SA2021 Search Results

2sc5609

Abstract: 2sc5609 transistor 2SA2021
Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SC5609 0.10+0.05 –0.02 0.33+0.05 –0.02 0.15 min. 5˚ • Features 1.20±0.05 0.80±0.05 3 1 0.23+0.05 –0.02 2 0.15 min. • High foward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G • Features  Package  High forward current transfer ratio hFE  Code SSSMini3-F2

Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing and thinning of the

Contextual Info: Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 Unit: mm 0.33+0.05 –0.02 0.10+0.05 –0.02 5˚ M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing and thinning of the

ge 027

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2021G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609G • Package M Di ain sc te on na tin nc ue e/ d  Features  High forward current transfer ratio hFE

Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 1 2 0.15 min. d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll

2SC5609

Abstract: 2SA2021G 2SC5609G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2021G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609G • Package  High forward current transfer ratio hFE  Code SSSMini3-F2 Th an W is k y

2Sd5609

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G • Package  High forward current transfer ratio hFE  Code SSSMini3-F2 M Di ain

2Sd5609

Abstract: 2SC5609G 2SC5609 2SA2021G 2sd5609g_pc-ta
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G • Package  High forward current transfer ratio hFE  Code SSSMini3-F2 Th an W is k y

2SC5609

Abstract: 2sc5609 transistor transistor 2sc5609 2SA2021 2SC560
Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 1.20±0.05 2 0.15 min. • High forward current transfer ratio hFE

2sc5609 transistor

Abstract: 2SC5609 transistor 2sc5609 2SA2021
Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SC5609 0.10+0.05 –0.02 0.33+0.05 –0.02 0.15 min. 5˚ • Features 1.20±0.05 0.80±0.05 3 1 0.23+0.05 –0.02 2 0.15 min. • High foward current transfer ratio hFE

2sc5609 transistor

Abstract: 2SC5609 transistor 2sc5609 2SA20 2SA2021
Contextual Info: Transistors 2SC5609 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SA2021 0.10+0.05 –0.02 0.33+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 2 0.15 min. • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the

2Sd5609

Abstract: 2SC5609G 2SC560 2SC5609 2SA2021G 2sd5609g_pc-ta
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G • Package  High forward current transfer ratio hFE  Code SSSMini3-F2 M Di ain

2SC5609

Abstract: 2sc5609 transistor transistor 2sc5609 2SA2021
Contextual Info: Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 0.80±0.05 1.20±0.05 Collector current Peak collector current Collector power dissipation

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2021G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609G • Features  Package  High forward current transfer ratio hFE  Code SSSMini3-F2

2SC5609

Abstract: 2sc5609 transistor transistor 2sc5609 2SA2021 SSSMini 3
Contextual Info: Transistors 2SC5609 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SA2021 0.10+0.05 –0.02 0.33+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 2 0.15 min. • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the

2SA2021G

Abstract: 2SC5609G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2021G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609G • Package  High forward current transfer ratio hFE  Code SSSMini3-F2 M Di ain

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

transistor 2sc5609

Abstract: 2sc5609 MAS3781E 2sc5609 transistor 2SD2621
Contextual Info: New Subminiature Surface-Mount Package SSS Mini 3-Pin Package Series n Overview The Subminiature Surface-Mount Package Series with 1.2 mm x 0.8 mm x 0.52 mm in external size will contribute to the production of downsized, lightweight, and low-profile devices. In addition, the flat-lead structure of the

2SC5609

Abstract: 2sc5609 transistor DA221 transistor 2sc5609 philips zener 2SA1774R 2SA1774S panasonic zener smd ZENER PANASONIC 2PC4617q
Contextual Info: New Product Announcement February 2002 Introducing Second Generation Subminiature Schottky, Zener & Switching Diodes in SOT-523 3-pin SMD’s SOT-523 C TO P V IE W B B C E A G H K J Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D  

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the