2SA2017 Search Results

2SA2017 Datasheets (2)

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ROHM

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SA2017		ROHM	Silicon PNP Transistor	Original	PDF	45.07KB	1
2SA2017		ROHM	Power Transistor (-80V, -4A)	Scan	PDF	38.67KB	1

2SA2017 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA2017 Abstract: 2SC5574 Contextual Info: 2SA2017 Transistors Power Transistor −80V, −4A 2SA2017 !Features 1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574.	Original	2sa2017 2sc5574	PDF
Contextual Info: 2SA2017 Transistors Power Transistor −80V, −4A 2SA2017 !Features 1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574.	Original	2sa2017 2sc5574 o-220fn	PDF
2SA2017 Abstract: 2SC5574 Gan transistor Contextual Info: 2SA2017 Transistors Power Transistor -80V, -4A 2SA2017 ! Features 1 ) Low VcE(sat). (Typ. -0 .3 V at Ic / I b = - 2 / -0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Te = 25 °C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574.	OCR Scan	2sa2017 2sc5574 o-220fn gan transistor	PDF
2SC557 Abstract: 2SA2017 2SC5574 Contextual Info: 2SC5574 Transistors_ Power Transistor 80V, 4A 2SC5574 •External dimensions (Units : mm) •Features 1) Low saturation voltage. (Typ. VcE(sat) = 0.3V at Ic / I b =2 / 0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C)	OCR Scan	2sc5574 2sa2017 o-220fn 2sc557	PDF
2SA2017 Abstract: 2SC5574 Contextual Info: 2SC5574 Transistors Power Transistor 80V, 4A 2SC5574 !External dimensions (Units : mm) !Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area).	Original	2sc5574 2sa2017 o-220fn	PDF