2N7000 Search Results

Contextual Info: ^ Supertex inc . 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVusg/ ^DS O N b v dgs (max) (min) TO-92 60V 5Q 75mA 2N7000 ' d (ON) Features Advanced DMOS Technology □ These enhancement-mode (normally-off) power transistors

Contextual Info: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET BVDgs RdS ON (max) If Ordering Information 60V 5n 75mA b v dss / Order Number / Package TO-92 2N7000 Features I i Free from secondary breakdown !J Low power drive requirement r i Ease of paralleling

2N7000

Abstract: 2n7000 data sheet 2n7000 equivalent mosfet motor dc 48v
Contextual Info: DC COMPONENTS CO., LTD. 2N7000 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET Description Designed for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

2N7000

Contextual Info: 2N7000 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N7000 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

Contextual Info: 2N7000 DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • • • • • • • • max. ∅ 0.022 (0.55) High input impedance Low gate threshold voltage Low drain-source ON-resistance High-speed switching

2N7000P

Contextual Info: -. —. —-.-., .— N-CHANNEL 2- MARCH . . .- 2N7000P MODE VERTICAL DMOS FET ISSUE “,. ENHANCEMENT I 94 FEATURES * 60 Volt VcEo *R 0S 0. = 5 ‘2 D G s v ABSOLUTE MAXIMUM lJ&h!sJ RATINGS. SYMBOL PARAMETER Drain-Source Voltage Continuous Pulsed

fairchild 2N7002 MARKING

Abstract: 2N7000-D nds7000
Contextual Info: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

2N7000

Abstract: BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA
Contextual Info: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5

Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2n7000 equivalent

Abstract: 2n7000 2n7000 data sheet 7000 Series 2n7000 equivalents
Contextual Info: SEMICONDUCTOR 2N7000 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 7000 K 3 No. Item 816 4 Marking Description 2N Series Name 7000 Device Name KEC K KEC CORP. Lot No. 816 Device Name 2004. 2. 11 2 Revision No : 0 8 Year

Contextual Info: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ESD Protected 2000V. A High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable. N E K

2n7000 equivalent

Abstract: equivalent of 2n7000
Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2n7000 smd

Contextual Info: MOSFET SMD Type N-Channel Enhancement Mode MOSFET 2N7000 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● High density cell design for low RDS ON +0.1 1.3-0.1 +0.1 2.4-0.1 ● Voltage controlled small signal switch 0.4 3 1 ● High saturation current capability

2N7000

Abstract: 2N7000/2N7000
Contextual Info: G en era l S e m ic o n d u c t o r * 2N7000 DMOS Transistor N-Channel DMOS Transistors v Features_ _ • High input impedance • Low gate threshold voltage • Low drain-source ON-resistance • High-speed switching • No minority carrier storage time

2N7000G

Abstract: 2N7000RLRAG 2N7000 MOSFET PIN DETAILS
Contextual Info: 2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features http://onsemi.com • AEC Qualified • PPAP Capable • This is a Pb−Free Device* 200 mAMPS 60 VOLTS RDS on = 5 W N−Channel MAXIMUM RATINGS Rating D Symbol Value Unit Drain Source Voltage

2N7000

Abstract: transistors n-CHANNEL
Contextual Info: 2N7000 DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • • • • • • • • max. ∅ 0.022 (0.55) High input impedance Low gate threshold voltage Low drain-source ON-resistance High-speed switching

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

Contextual Info: WEITRON Small Signal MOSFET N-Channel 2N7000 3 DRAIN * “G” Lead Pb -Free TO-92 Features: *Low On-Resistance : 5 Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns 2 GATE 1. SOURCE 2. GATE

fet 2n7000

Abstract: 2N7000
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7000 ISSUE 2– NOVEMBER 94 S G D TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCES 60 V Continuous Drain Current ID 0.2 A Pulsed Drain Current IDM 0.5 A Gate Source Vootage

2n7000

Abstract: 2n7000 data sheet 2n7000 equivalent
Contextual Info: 2N7000 SemiWell Semiconductor Logic N-Channel MOSFET Features • Symbol RDS on (Max 5 Ω )@VGS=10V { RDS(on) (Max 5.3Ω )@VGS=4.5V ■ ■ 3. Drain ● Gate Charge (Typical 0.5nC) Maximum Junction Temperature Range (150°C) ◀ 2. Gate { ▲ ● ● {

2N7000-TR1 equivalent

Abstract: 2N7000 2n7000 equivalent 2N7000 MOSFET 2N7000KL 2N7000KL-TR1 2N7000KL-TR1-E3 2N7000-TR1 2n7000 data sheet 2n7000 equivalents
Contextual Info: Specification Comparison Vishay Siliconix 2N7000KL vs. 2N7000 Description: N-Channel, 60 V D-S MOSFET Package: TO-92 Pin Out: Identical Part Number Replacements: 2N7000KL-TR1 Replaces 2N7000-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free Version) Replaces 2N7000-TR1

2N7000KL-TR1-E3

Abstract: BS170KL-TR1 170KL 2N7000KL-TR1 BS170KL-TR1-E3 rohs marking code vishay SILICONIX
Contextual Info: 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) VGS(th) (V) 2 at VGS = 10 V • TrenchFET Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free • ESD Protected: 2000 V 0.47 Available RoHS*

2N7000

Abstract: 2n7000k
Contextual Info: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ESD Protected 2000V. A High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable. N E K

2N7002 MARKING

Abstract: 2N7002 2N7002 st 2N7002 di codes marking st2n 2N7000 MOSFET
Contextual Info: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET Table 1: General Features TYPE 2N7000 2N7002 • ■ ■ Figure 1: Package VDSS RDS on Id 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A TYPICAL RDS(on) = 1.8Ω @10V