2N3904 Search Results

2N3904

Contextual Info: DC COMPONENTS CO., LTD. 2N3904 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector

ADM1033 D

Abstract: fs5 mosfet 1404D
Contextual Info: ADM1033 Thermal Monitor and Fan Speed RPM Controller The ADM1033 is a one channel remote- and local-temperature sensor and fan controller. The remote channel monitors the temperature of the remote thermal diode, which may be discrete 2N3904/6s or may be located on a microprocessor die. The device also

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2n3904 225

Abstract: 2N3904 2N3904 die
Contextual Info: 2N3904 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available 2N3906

2n3904 npn

Abstract: 2N3904 2N3906 transistor NPN 2N3904 UTC2N3904
Contextual Info: UTC 2N3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =625mW *Complementary to 2N3906 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

2N3906L

Abstract: 2N3906-G 2N3906L-T92-K
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: Pc MAX =625mW * Complementary to UTC 2N3904 1 TO-92 „ ORDERING INFORMATION Ordering Number

Contextual Info: MCC TM Micro Commercial Components 2N3904 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information Capable of 625mW of Power Disspation and 200mA Ic

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION  FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to UTC 2N3904  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N3906L-AB3-R

2n3904 npn fairchild

Abstract: 2N3904 KSP6520 KSP6521
Contextual Info: KSP6520/6521 KSP6520/6521 Amplifier Transistor • Collector-Emitter Voltage: VCEO=25V • Collector Power Dissipation: PC max =625mW • Refer to 2N3904 for graphs TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

2N3906V

Abstract: 2N3904V 1N916
Contextual Info: SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current G A 1 H @VCE=30V, VEB=3V. D 2 : ICEX=50nA Max. , IBL=50nA(Max.) 3 K Excellent DC Current Gain Linearity.

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

2N3904U

Abstract: ZC12 2N3904 zc marking
Contextual Info: SEMICONDUCTOR 2N3904U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZC 1 2 Item Marking Description Device Mark ZC 2N3904U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , IBL=50nA(Max.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage

2N3904

Abstract: 2n3904 specification NPN Transistor TO92 40V 200mA TRANSISTOR 2N3904 E 25 2N3904 transistor free h 2n3904 2N3904G 2N3904-Y transistor NPN 2N3904 2n3904 datasheet
Contextual Info: 2N3904 0.2A, 60V NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW Ta=25°C Collector Current ICM: 200mA Collector – Base Voltage V(BR)CBO: 60V

2N3904

Abstract: Transistor 22N3904 2n3904 application KST-9010-000 2n3904 TO-92 2n3904 datasheet 2N3904 ND tr 2n3904 2N3906
Contextual Info: 2N3904 Semiconductor NPN Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with 2N3906 Ordering Information Type NO.

2N3906

Abstract: 2N3906 NPN Transistor 2n3906 specification 2N3906S 2N3904 2n3904 applications
Contextual Info: 2N3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ Type Marking 2N3906 2N3906 SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS 2N3904 APPLICATIONS WELL SUITABLE FOR TV AND HOME

transistor 2n3904

Abstract: transistor 2N3906 2N3906 TRANSISTOR 2N3906 2N3906 PNP transistor 2n3906 TRANSISTOR pnp 2n3906 PNP transistor DC current gain PNP switching transistor 2N3906 mhz 2n3906 equivalent transistor 2N3904
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR PNP TO-92 FEATURE z PNP silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the NPN transistor 2N3904 is

2N3904

Abstract: 2n3904 datasheet 2n3904 TO-92 2n3904 equivalent 2N3904 Transistors h 2n3904 2n3904 data sheet 2n3904 npn
Contextual Info: 2N3904 NPN General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC Unit Vdc Vdc Vdc mAdc

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2N3904 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B NPN General Purpose Amplifier

2N3904DCSM

Abstract: 2N3904D
Contextual Info: 2N3904DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

2n5226

Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

MM3904

Abstract: MM3903 2n3904 replacement 2N3903 2N3904
Contextual Info: MM3903 SILICON MM3904 NPN SILICON SWITCHING AND AMPLIFIER TRANSISTORS NPN SILICON ANNULAR TRANSISTORS . . , designed for general purpose switching and amplifier applications. Direct replacement for plastic 2N3903 and 2N3904. Hermetic Low Profile TO-52 Metal Package for High Reliability

2N3903

Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300