2MX36 Search Results

K7M643635M-Q

Contextual Info: K7N643631M K7N641831M Preliminary 2Mx36 & 4Mx18 Pipelined NtRAM TM Document Title 2Mx36 & 4Mx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Sep. 30. 2002 Advance 0.1 1. Delete the speed bins FT : 7.5ns, 8.5ns / PP : 200MHz

Contextual Info: IS61DDP2B44M18A/A1/A2 IS61DDP2B42M36A/A1/A2 4Mx18, 2Mx36 72Mb DDR-IIP Burst 4 CIO SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES •                     2Mx36 and 4Mx18 configuration available.

JTAG 10P

Abstract: K7R641882M-FC25 K7R640982M-FC25 K7R643682M-FC20
Contextual Info: K7R643682M K7R641882M K7R640982M Preliminary 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Sep, 14 2002 Advance 0.1 1. Update AC timing characteristics.

K7R643684

Contextual Info: K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM 72Mb M-die QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM 72Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: K7J643682M K7J641882M Preliminary 2Mx36 & 4Mx18 DDR II SIO b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Mar. 9, 2003 Advance 0.1 1. Correct the JTAG ID register definition

Contextual Info: K7N643645M K7N641845M 2Mx36 & 4Mx18 Pipelined NtRAMTM 72Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: Preliminary K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Mar. 9, 2003 Advance 0.1 1. Correct the JTAG ID register definition

tb41

Contextual Info: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The

Contextual Info: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX 16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision .

Contextual Info: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • C ha n g ed m odule P C B from 6 -L a ye r to 4-Layer. • C ha n g ed M odule Part No. from K M M 5 3 6 2 2 0 3 C W /C W G to K M M 5 3 6 2 2 0 3 C 2 W /C 2 W G caused by P C B revision .

Contextual Info: IS61QDPB44M18A/A1/A2 IS61QDPB42M36A/A1/A2 4Mx18, 2Mx36 72Mb QUADP Burst 4 SYNCHRONOUS SRAM (2.5 Cycle Read Latency) FEATURES •                     2Mx36 and 4Mx18 configuration available. On-chip Delay Locked Loop (DLL) for wide data

IS61QDB22M36A

Contextual Info: IS61QDB24M18A IS61QDB22M36A 4Mx18, 2Mx36 72Mb QUAD Burst 2 Synchronous SRAM FEATURES •                  2Mx36 and 4Mx18 configuration available. On-chip Delay-Locked loop (DLL) for wide data valid window.

IS61QDB42M36A

Abstract: B0821
Contextual Info: IS61QDB44M18A IS61QDB42M36A 4Mx18, 2Mx36 72Mb QUAD Burst 4 SYNCHRONOUS SRAM FEATURES •                   2Mx36 and 4Mx18 configuration available. On-chip Delay-Locked Loop (DLL) for wide data valid window.

Contextual Info: IS61DDPB24M18A/A1/A2 IS61DDPB22M36A/A1/A2 4Mx18, 2Mx36 72Mb DDR-IIP Burst 2 CIO Synchronous SRAM (2.5 Cycle Read Latency) FEATURES •                   2Mx36 and 4Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid

Contextual Info: IS61DDP2B24M18A/A1/A2 IS61DDP2B22M36A/A1/A2 4Mx18, 2Mx36 72Mb DDR-IIP Burst 2 CIO Synchronous SRAM (2.0 Cycle Read Latency) FEATURES •                   2Mx36 and 4Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid

K7I641882M

Abstract: K7I643682M
Contextual Info: K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM 72Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: IS61QDB44M18A IS61QDB42M36A 4Mx18, 2Mx36 72Mb QUAD Burst 4 SYNCHRONOUS SRAM FEATURES •                   2Mx36 and 4Mx18 configuration available. On-chip Delay-Locked Loop (DLL) for wide data valid window.

MH2M36CXJ-7

Abstract: MH2M36CXJ6
Contextual Info: MITSUBISHI LS Is DRAM MODULE FAST PAGE MODE DYNAMIC RAM 72 2MX36 # Ä . M BIT Max. Access Type name Load memory time Outward dimensions Data sheet W x H x D (mm) page 107.95 x 20.2 x 8.60 3 /8 (ns) MH2M36CXJ-6 ★ 60 MH2M36CXJ-7 ★ 70 M 5M418160CJ x 4 M5M44500CJ x 2

Contextual Info: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362203CW /CWG to KMM5362203C2W /C2W G caused by PCB revision .

K7R643684M-FC30

Abstract: K7R641884M-FC20 K7R641884M K7R643684M-FC25 K7R641884M-FC25 K7R643684M K7R643684M-FC16 K7R643684M-FC20 SRAM sheet samsung K7R641884MFC20
Contextual Info: Preliminary K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM Document Title 2Mx36-bit, 4Mx18-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Sep 14, 2002 Advance 0.1 1. Update AC timing characteristics. 2. Change the JTAG instruction coding.

Contextual Info: IS61QDPB44M18A/A1/A2 IS61QDPB42M36A/A1/A2 4Mx18, 2Mx36 72Mb QUADP Burst 4 SYNCHRONOUS SRAM (2.5 Cycle Read Latency) FEATURES •                     2Mx36 and 4Mx18 configuration available. On-chip Delay Locked Loop (DLL) for wide data

K7I641882

Abstract: FC30 K7I643682M-FC25 K7I641882M K7I641882M-FC25 K7I641882M-FC30 K7I643682M K7I643682M-FC16 K7I643682M-FC20 K7I643682M-FC30
Contextual Info: K7I643682M K7I641882M K7I640882M Preliminary 2Mx36 & 4Mx18 & 8Mx8 DDRII CIO b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit, 8Mx8-bit DDRII CIO b2 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Mar. 9, 2003 Advance 0.1 1. Correct the JTAG ID register definition

Contextual Info: IS61DDB24M18A IS61DDB22M36A 4Mx18, 2Mx36 72Mb DDR-II Burst 2 CIO SYNCHRONOUS SRAM FEATURES •                  2Mx36 and 4Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid