29MAR04 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR B DESCRIPTION DATE REV PER 0G 3H — 0 0 8 5 — 0 4 DWN 29MAR04 APVD JR MS D D B B ACTIVE 1503-03

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - DIST LOC G ALL RIGHTS RESERVED. R E V IS IO N S 14 LTR DATE DWN APVD 29MAR04 JR CK DESCRIPTION REV PER 0G 3A—0 2 2 8 —0 4 D D Æ ^CRÆ IL^ WIRE RANGE

2.54mm Header 3 Pin

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

Contextual Info: SMBJ5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AA SMB J-Bend Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.180 (4.57) 0.160 (4.06) Stand-off Voltage 5.0 to 188V

Contextual Info: BPW46 VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPW46 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. The large active area combined with a flat case gives

SUP17N25-165

Contextual Info: SUP17N25-165 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 250 0.165 @ VGS = 10 V 17 D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automotive such as − Diesel Fuel Injection

XT57C

Contextual Info: XT57C Vishay Dale Quartz Crystals FEATURES • Miniature size • 1.1 mm height • Wide frequency range • Seam sealing • Emboss taping The XT57C is a miniature SMD crystal with 7.0 x 5.0 ceramic package and a height of 1.1 mm max. 9.8304MHz to 100MHz

Si3445ADV

Abstract: Si3445ADV-T1-E3
Contextual Info: Si3445ADV New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.8 0.060 @ VGS = −2.5 V −4.9 0.080 @ VGS = −1.8 V −4.2 (4) S TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm

40575

Abstract: Si3973DV Si3973DV-T1
Contextual Info: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS

Si3433BDV

Abstract: Si3433BDV-T1-E3 Si3433BDV-T1 SI3433B
Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 46 FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

Contextual Info: BPW96 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near

7919

Contextual Info: CQY36N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.

BPW34 circuit

Abstract: BPW34 application
Contextual Info: BPW34 VISHAY Vishay Semiconductors Silicon PIN Photodiode Description 94 8583 The BPW34 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5 devices in many applications.

Si3443BDV

Contextual Info: Si3443BDV New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.060 @ VGS = −4.5 V −4.7 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested

Contextual Info: CAT28LV65 64K-Bit CMOS PARALLEL EEPROM FEATURES • 3.0V to 3.6V supply ■ CMOS and TTL compatible I/O ■ Read access times: ■ Automatic page write operation: – 1 to 32 bytes in 5ms – Page load timer – 150/200/250ns ■ Low power CMOS dissipation:

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS PCB LAYOUT - COMPONENT VIEW A MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

XT36C

Abstract: marking 10.000
Contextual Info: XT36C Vishay Dale Surface Mount Crystal FEATURES • Miniature size • Wide frequency range • Glass sealing • Emboss taping This XT36C part is a miniature SMD crystal with 8.0 x 4.5 ceramic package and a height of 1.6 mm max . It is widely applied in notebook computer, PCMCIA and communication

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

CAT5241

Abstract: linear potentiometer sda 5241 CAT5241WI-00-T1 CAT5241WI-10-T1 CAT5241WI-25-T1 CAT5241WI-50-T1 CAT5241YI-25-T2 MS-013
Contextual Info: CAT5241 Quad Digitally Programmable Potentiometer DPP with 64 Taps and I²C Interface FEATURES DESCRIPTION „ Four linear-taper digitally programmable potentiometers „ 64 resistor taps per potentiometer „ End to end resistance 2.5 kΩ, 10 kΩ, 50 kΩ or

74HC132

Abstract: CAT5113 LM6064 LT1097 MS-001 RB555
Contextual Info: CAT5113 100-Tap Digitally Programmable Potentiometer DPP FEATURES DESCRIPTION „ 100-position linear taper potentiometer The CAT5113 is a single digitally programmable potentiometer (DPP™) designed as a electronic replacement for mechanical potentiometers. Ideal for

4425b

Abstract: V30114-T1 vishay siliconix code marking to-220 marking code 20L sot-23 sot23 to252 footprint wave soldering siliconix an808
Contextual Info: Si4421DY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.00875 @ VGS = - 4.5 V - 14 0.01075 @ VGS = - 2.5 V - 12 0.0135 @ VGS = - 1.8 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Game Station

V30114

Abstract: T0445 Si9730
Contextual Info: Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC FEATURES D D D D D D Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout D D

Contextual Info: CAT28C65B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.