29LV200B Search Results

29LV200B

Abstract: 29lv200t-10 MBM29LV200B
Contextual Info: FLASH MEMORY M B M 29LV200T-10-12/M B M 29LV200B-10-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts

T 3036

Abstract: 1mx8 29LV004T V200B-12 3036 MBM29LV002B MBM29LV008T
Contextual Info: Flash Memory 3 • Flash memory (3V ONLY) T a = 0 °C to +70 °C Organization ( Wx b) 256Kx8 Part Number Power Consumption Access Cycle max. (mW) Time Time max. (na> min. (ns) Operating Standby Mods (CMOS level) MBM29L.VQÔ2T-10 MBM29LV002B-10 MBM29LV002T-12

Contextual Info: FLASH MEMORY B l I l i i 2M 256K x 8/128K x 16 BIT M B M 29 LV 200 T -1 o -1 2 /M B M 29 LV 200 B -1 0-12

fujitsu 29LV160B

Abstract: 29F800B 29LV160B 29F160B m29f800bb
Contextual Info: JTAG-Booster for AMD ÉlanSC520 P.O. Box 1103 Kueferstrasse 8 +49 (7667 908-0 sales@fsforth.de l l l l D-79200 Breisach, Germany D-79206 Breisach, Germany Fax +49 (7667) 908-200 http://www.fsforth.de JTAG-Booster for AMD ÉlanSC520 Copyright  1995.2002:

Contextual Info: AMD£I 29LV200B 2 M egabit 256 K x 8-B it/I 28 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single pow er supply operation Em bedded A lgorithm s — 2.7 to 3.6 volt read and w rite operations for battery-powered applications

29LV200

Abstract: 29LV200B
Contextual Info: P R E L IM IN A R Y . A M D Cl Am29LV200T/29LV200B 2 M e g a b i t 2 6 2, 14 4 x 8 - B i t /1 3 1 ,0 7 2 x 16-Bit C M O S 3.0 Volt-only S e c t o r A r c h i te c tu r e Flash M e m o r y DISTINCTIVE C HA R A C TER ISTIC S • ■ Single power supply operation

Contextual Info: ADVANCE INFORMATION AMD 29LV200B 2 Megabit 256 K X 8-Bit/128 K X 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and w rite operations for battery-powered applications

Contextual Info: AMD£I 29LV200B 2 Megabit 256 K x 8-B it/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications ■ ■ M anufactured on 0.32 |jm process technology

Contextual Info: AMD£I PRELIM IN ARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and w rite operations for battery-powered applications

Contextual Info: PRELIM IN ARY AM Dii 29LV200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — 2.7 to 3.6 volt read and w rite operations for battery-powered applications

Contextual Info: PRELIMINARY AMDH Am29LV200T/29LV200B 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Mem ory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — Embedded Erase algorithms autom atically preprogram and erase the entire chip or any

Contextual Info: FLASH MEMORY 2M 256K x 8/128K x 16 BIT MBM29LV200TC-90-12/29LV200BC 90/-12 - FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs

29lv640

Abstract: HC-36/29lv640
Contextual Info: JTAG-Booster for IDT RC64145 FORTH-SYSTEME GmbH P.O. Box 11 03 Kueferstrasse 8 l D-79200 Breisach, Germany l D-79206 Breisach, Germany +49 (7667 908-0 l Fax +49 (7667) 908-200 l e-mail: sales@fsforth.de JTAG-Booster for IDT 64145 Copyright  1995.2000: