29JUL03 Search Results

SUD70N03-04P

Abstract: V5100
Contextual Info: SPICE Device Model SUD70N03-04P Vishay Siliconix N-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: 4 THIS DRAWING C IS C O P Y R IG H T U N P U B L IS H E D . RELEASED BY 19 2 3 AMP IN COR POR ATE D. FOR ALL PUBLICATION R IG H T S ,19 LOC R ES ER V ED . D IS T 00 GP revision : DESCRIPTION L TR RELEASED PER EC 0513-0196-03 DATE DWN APVD 29JU L03 JR JG

Contextual Info: 3 T H I S DRAWI NG C I S UNP UB L I S HE D. COPYRI GHT 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP I NCORPORATED. REVISIONS ,19 ALL R I GH T S RES ER VE D. DESCRIPTION A REVISED PER EC 0 5 1 3 - 0 2 3 4 - 0 5 DATE DWN APVD 16JAN06 JG CR 635+.015

Si4410DY SPICE Device Model

Abstract: Si4410DY
Contextual Info: \\\ SPICE Device Model Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. FT DIST R E V IS IO N S LTR DATE DWN APVD 7 /2 9 /0 3 SS CR DESCRIPTION RELEASED NOTES: D D MATERIAL: HOUSING: POLYAMIDE, GU\SS FILLED, U L 9 4 V - 0 ,

Contextual Info: CE P L AN E5 T UN DOCUMENT CONTROL E. THIS DRAWI NG 15 A C O N T R O L L E D DOCUMENT. REVISIONS F 7 D ESCRIPTION M O DIFICATIO NS LTR REV A UPDATED PER E R O O - 9 2 2 7 - 0 2 DATE DWN DE55. APVD APR. 2 8 - JUL-03 FD YP m o 30 . G ÌSX. P/N AMP I MPEDANCE

mb6s diode

Abstract: 0.5A MB6S
Contextual Info: MB2S thru MB6S Vishay Semiconductors formerly General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier Reverse Voltage 200 to 600V Forward Current 0.5A TO-269AA MBS 0.029 (0.74) 0.017 (0.43) Mounting Pad Layout 0.023 MIN.

Contextual Info: RMB2S and RMB4S Vishay Semiconductors formerly General Semiconductor Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier Reverse Voltage 200 to 400 V Forward Current 0.5 A Reverse Recovery time 150 ns TO-269AA MBS 0.029 (0.74) 0.017 (0.43)

HDP 29

Contextual Info: 4 THIS DRAWING 0 IS C O P Y R IG H T U N P U B L IS H E D . RELEASED BY 19 2 3 AMP IN COR POR ATE D. FOR ALL PUBLICATION R IG H T S ,19 LOC R ES ER V ED . D IS T GP : revision 00 DESCRIPTION L TR RELEASED PER EC DATE 0513-0196-03 29 JUL 03 DWN APVD JR JG

SUM110N02-03P

Abstract: ON1114
Contextual Info: SPICE Device Model SUM110N02-03P Vishay Siliconix N-Channel 20-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: CE PLAN E5T UN DOCUMENT CONTROLE. 00 F THIS AMP cl RG 134786-2 LJJ m lu CL in COTES A CONTROLLED DOCUMENT . DIMENSION 59 - RG DE DATE DWN DE55. APVD APR. 2 8 - JUL-03 FL YP MODIFICATIONS UPDATED ER00-9227-02 CABLE 134786-1 > CL lu in LU CL 15 DESCRIPTION LTR

Contextual Info: 3 4 DRAWING THIS MADE DRAWING 0 IN IS THIRD ANGLE UNPUBLISHED. COPYRIGHT RELEASED 19 BY ANP FOR PUBLICATION INCORPORATED. ALL 2 <3> PROJECTION INTERNATIONAL RIGHTS DI S T LOC ,19 REV I 5 I0N5 00 GP RESERVED. P F LTR ZONE DESCRIPTION DATE APPD D R E V IS E D

595D

Contextual Info: 595D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Conformal Coated, Maximum CV FEATURES • • • • New extended range offerings. Large capacitance rating range. Terminations: Tin 2 standard. 8mm, 12mm tape and reel packaging available per EIA