29F01690 Search Results

Contextual Info: ADVANCED INFORMATION MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current

29F016

Abstract: 29F01690 29f016-90 29F016-12 MX29F016 SA10 SA11 SA12 SA13 SA14
Contextual Info: MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current • Command register architecture

Contextual Info: WHITE /MICROELECTRONICS 4x2M x325V FLASH SIMM WPF8M 32XB-90PSC5 PRELIMINARY* FEATURES • A ccess Tim e of 90ns ■ Packaging: • 80-pin S IM M • The m odule is m a nufa cture d w ith sixte e n 2 M x 8 CMOS ■ 100,000 E rase/Program Cycles ■ O rganized as fo u r banks of 2M x32

Contextual Info: VZÄ WHITE /MICROELECTRONICS 2Mx325V FLASH SIMM W PF2M32X-90XC5 PRELIMINARY* FEATURES • A ccess Tim e of 90ns ■ ■ 100,000 E rase/Program Cycles Packaging: ■ O rganized as 2M x32 • 80 -pin S IM M ■ C om m ercial Tem pe ratu re Range • 80 -pin S IM M , Low P ro file *

29F016

Contextual Info: AMENDMENT AMD£I Am29F016 Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This amendment supersedes information regarding the Am 29F016 device in the 1996 Flash Products Data Book/Handbook, PID 11796D. This document includes replacem ent pages for the Am 29F016 data sheet,

PM0590

Contextual Info: MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current • Command register architecture

29F016-90

Contextual Info: WPF4M32XA-90PSC5 2x2Mx32 5V FLASH SIMM p r e l im in a r y * FEATURES • ■ 100,000 Erase/Program Cycles A cce ss Time of 90ns Packaging: Organized as two banks of 2M x32 • 80-pin SIM M Com m ercial Temperature Range • The module is m anufactured w ith eight 2M x8 CM O S Flash

Contextual Info: MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current • Command register architecture

Contextual Info: PRELIMINARY MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current

CS 1602 B

Abstract: 29f016-90
Contextual Info: WPF8M32XA-90PSC5 WHITE M IC R O ELECTRO NICS 4x2Mx32 5V FLASH S IM M PR ELIM IN A R Y ' FEATURES • A c c e ss T im e of 90ns ■ 100,000 E ra s e /P ro g ra m Cycles ■ ■ O rg an ized as fo u r banks of 2 M x 3 2 ■ C o m m e rc ia l T e m p e ra tu re Range

ALI m5123

Abstract: M5123 A1 PC104 CPU SC-104 AM29F160 JTAG bios ami CONNECTOR FLM8L112 M5123 cpu sc104
Contextual Info: Module Elan486 SC104 FORTH-SYSTEME GmbH Postfach 11 03 l D-79200 Breisach a. Rhein Küferstr. 8 l D-79206 Breisach a. Rhein 07667 908-0lFax ( (C) Copyright 1998: FS FORTH-SYSTEME GmbH Postfach 1103, D-79200 Breisach a. Rh., Deutschland

Contextual Info: PRELIMINARY- a Advanced Micro Devices A m 29F 016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program A lgorithm s — Automatically programs and verifies data at

Contextual Info: WHITE /MICROELECTRONICS 2x2Mx325V FLASH SIMM W PF4M 32XA-90PSC5 PRELIMINARY* FEATURES • A ccess Tim e of 90ns ■ Packaging: • 80-pin S IM M • The m odule is m a nufa cture d w ith eigh t 2 M x8 CMOS Rash ■ 100,000 E rase/Program Cycles ■ O rganized as tw o banks of 2M x32

Contextual Info: MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current • Command register architecture