29DL400TC Search Results

Contextual Info: FLASH MEMORY 4M 512K x 8/256K x 16 BIT CMOS 29DL400TC -55/-70/-90/-12/MBM29 D L400BC-55/-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program

29DL400TC

Contextual Info: FLASH MEMORY 4M 512K x 8/256K x 16 BIT CMOS M B M 2 9 D L 4 0 0 T C -55-70-90-12/M B M 29 D L400B C-5 5 -70 -90-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program

29LV160TE

Abstract: 29lv800ta Micron 512MB NOR FLASH 29F800TA 29F033C 29f400tc TSOP 48 Package 29f160te Micron 32MB NOR FLASH 29f002tc
Contextual Info: T H E Home Products P O S S I B I L I T I E S A R E I N F I N I T E Contacts Contents Introduction to Flash Memory MEMORY SOLUTIONS NOR-Flash MirrorFlashTM FCRAMTM – Fast Cycle Ram MCP – Multi-Chip Packages Packaging Technology NOR-FLASH, MIRRORFLASHTM,

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20866-2E FLASH MEMORY 4 M 5 1 2 K X 8 /2 5 6 K x 1 6 B IT M BM 29D L400TC -55/-70/-90/-12/MB M29D L400 B C -5 5-70 -90 -1 2 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements

Contextual Info: FUJITSU SEMICONDUCTOR ì DATA SHEET ¡ DS05-20866-1E FLASH MEMORY 4M 512K X 8/256K x 16 BIT B lB M B M 2 9 D L 4 0 0 T C « «