29DEC1 Search Results

49138

Abstract: 49-138
Contextual Info: NOTES: MATERIALS AND FINISHES: BODY -BRASS, NICKEL P LATING C O N T A C T - BeCu , S ILVER PLATING INSULATOR - PTFE ELECTRICAL: A. I M P E D A N C E : 50 O H M B. F R E Q U E N C Y R A N G E : DC - 2 G H z MECHANICAL: A. D U R A B I L I T Y : 5 0 0 C Y C L E S MIN.

Contextual Info: SMD Power Inductor CDH80D48 Description • Ferrite drum core construction • Magnetically unshielded • L W H: 8.90 8.15 x5.0 mm Max. • Product weight: 1.0g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. RoHS

SUD50P04-08

Contextual Info: SUD50P04-08 www.vishay.com Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -40 RDS(on) () ID (A) 0.0081 at VGS = -10 V -50 d 0.0117 at VGS = -4.5 V -48 d Qg (TYP.) 60 • TrenchFET power MOSFET • 100 % Rg and UIS tested

Contextual Info: SQD50P04-13L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET -40 RDS(on) () at VGS = -10 V 0.013 RDS(on) () at VGS = -4.5 V 0.022 ID (A) • Package with low thermal resistance

Contextual Info: D I E S E Z E I C H N U N G I S T EI N K O N T R O L L I E R T E S D O K U M E N T . MATE D WITH: P A S S E N D ZU: LOC T H I S D RA W IN G IS A C O N T R O L L E D D O C U M E N T . R EVISIO N S D IS T AENDERUNGEN D E S C R IP T IO N B E S C H R E IB U N G

Contextual Info: SUD17N25-165 www.vishay.com Vishay Siliconix N-Channel 250-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 250 0.165 at VGS = 10 V 17 • TrenchFET power MOSFET • 175 °C junction temperature • Material categorization:

CHTADC10

Abstract: CHT-ADC10 10n8 RNC Resistor
Contextual Info: The Leader in High Temperature Semiconductor Solutions CHT-ADC10 Datasheet Version: 1.2 29-Dec-10 Last Modification Date High-Temperature Ultra-low-power 10-bit ADC General Description Features The CHT-ADC10 is a high-temperature, ultra-low-power, highly stable analog-todigital converter. This successive approximation ADC is based on an R-2R network