29AUG96 Search Results

Si3454DV

Contextual Info: Si3454DV N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "4.2 0.095 @ VGS = 4.5 V "3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 Power Dissipation (3) G Si3454DV—2.0 W (4) S 2.75 mm N-Channel MOSFET

Si3454DV

Contextual Info: Si3454DV N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "4.2 0.095 @ VGS = 4.5 V "3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 Power Dissipation (3) G Si3454DV—2.0 W (4) S 2.75 mm N-Channel MOSFET

ZC-982

Contextual Info: / - DECEMBER 3, 1996 I I TEST REPORT #9628@ QUALIFICATION TESTING CLE/FTE SAMTEC CORPORATION I APPROVED BY: LUANNE WITT PROGRAM MANAGER CONTECH RESEARCH, INC. CJl!y!yR 1 Contech Research - CERTIFICATION This is to certify that the evaluation described herein was

tfm 5380

Abstract: TFM 5360 TFM 5300 ir TFM 5330 tfm 5560 TFM 5300 TFM 1380 T Temic TFM 5360 u2506b TFM 5400
Contextual Info: TFMx IR Detector Photomodules TELEFUNKEN Semiconductors 06.96 Table of Contents General Information. 1 Introduction . 1

Contextual Info: Tem ic U6239B Semiconductors 2.9 GHz PLL for SAT TV Tuner with Universal Bus Description The U6239B is a single-chip frequency synthesizer with bidirectional I2C bus control and unidirectional 3-wire bus control, developed for SAT TV-tuner and cable tuner

Si3442DV

Contextual Info: Si3442DV N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.07 @ VGS = 4.5 V "4.0 0.095 @ VGS = 2.5 V "3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 Power Dissipation (3) G Si3442DV—2.0 W (4) S 2.75 mm N-Channel MOSFET

MIL-T-10727

Abstract: L2403
Contextual Info: 4 D R AW IN G H A D E IN T H IR D A N G L E P R O J E C T I O N T H I S DRAWING IS U N P U B L I S H E D . C O P Y R IG H T 19 LO C RELEASED FOR PUBLICATION SV A MP INCO RPO RATED. ALL D IS T REVISIONS AF 50 IN T E R N A T IO N A L R IG H T S R E S E R V E D .

Contextual Info: 908-21102 DRAWING TH 1 RD ANGLE R E V 1S I O N S REV NO. PRO J. <§> N OT E S : 1. DO NOT S C A L E T H I S DRAWI NG. 2. M A T E R I A L S OF C O N S T R U C T I O N : A B c CUSTOMER O U T L I N E D E S C R 1P T I O N O F F I C I A L R E L E A S E TO MFG R E V I S E D , S E E ECO FOR D E T A I L S

tda4482

Abstract: TDA4453 video mixer circuit diagram TDA4439 2 Mhz fm demodulator DIP18 TDA4482-D
Contextual Info: TDA4482-D Quasi-Parallel Sound Processor for TV Sets Technology: Bipolar Features D High signal sensitivity D Simple filter configuration and few external components D Processing of two carrier stereo signals D D D D Alignment-free intercarrier mixer Optimum tuning characteristics

IR TSOP1838

Abstract: TSOP18 application TSOP1833 TSOP1838 ir tsop1830 TSOP1836 TSOP1836 IR tsop1838 t infrared hz 9102 TSOP1830
Contextual Info: TSOP18. Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TSOP1830 TSOP1836 TSOP1838 TSOP1856 f0 30 kHz 36 kHz 38 kHz 56 kHz Type TSOP1833 TSOP1837 TSOP1840 f0 33 kHz 36.7 kHz 40 kHz Description The TSOP18. – series are miniaturized receivers for infrared remote control systems. PIN diode and

Si3441DV

Contextual Info: Si3441DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET

Si3454DV

Contextual Info: Si3454DV N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "4.2 0.095 @ VGS = 4.5 V "3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 Power Dissipation (3) G Si3454DV—2.0 W (4) S 2.75 mm N-Channel MOSFET

tag 625 600

Abstract: Si3441DV
Contextual Info: Si3441DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET

Si3441DV

Contextual Info: Si3441DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET

Contextual Info: 4 DRAWING HADE IN THIRD ANGLE PROJECTION T H I S D R A W I N G IS UNPUBLISHED. COPYRIGHT 19 D SV 7. 30 [. 2873 19 RELEASED FOR PUBLICATION AMP 1 7. 53 [. 6903 INCORPORATED. LOC DIST AF 50 ALL INTERNATIONAL RIGHTS RESERVED. N 1— 7 . 5 2 [. 0603 C ZONE